INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1 ℃/W 75 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 100 VGS(th) Gate Threshold Voltage VDS=VGS; ID=84μA 2.2 RDS(on) Drain-Source On-Resistance VGS=10V; ID=40A IGSS Gate-Source Leakage Current VGS= 20V IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V VSD Diode forward voltage IF=40A, VGS = 0V isc website：www.iscsemi.cn CONDITIONS 2 MIN TYP MAX UNIT V 3.8 V 5 mΩ 0.1 μA 1 μA 1.2 V isc & iscsemi is registered trademark