MOTOROLA MJD122T4 Silicon power transistors 8 amperes 100 volts 20 watt Datasheet

 Order this document
by MJD122/D
SEMICONDUCTOR TECHNICAL DATA
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for general purpose amplifier and low speed switching applications.
SILICON
POWER TRANSISTORS
8 AMPERES
100 VOLTS
20 WATTS
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122
Series, and TIP125–TIP127 Series
• Monolithic Construction With Built–in Base–Emitter Shunt Resistors
• High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc
• Complementary Pairs Simplifies Designs
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MAXIMUM RATINGS
Unit
VCEO
100
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
8
16
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
20
0.16
Watts
W/_C
Total Power Dissipation* @ TA = 25_C
Derate above 25_C
PD
1.75
0.014
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
6.25
_C/W
Thermal Resistance, Junction to Ambient*
RθJA
71.4
_C/W
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.165
4.191
MJD122
MJD127
0.190
4.826
Symbol
Rating
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
—
Vdc
ICEO
—
10
µAdc
0.07
1.8
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
* These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(continued)
0.063
1.6
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
0.243
6.172
Collector–Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
0.118
3.0
OFF CHARACTERISTICS
inches
mm
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
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ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
—
—
10
500
Unit
OFF CHARACTERISTICS — continued
µAdc
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
ICEX
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
—
10
µAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
—
2
mAdc
1000
100
12,000
—
—
—
2
4
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 8 Adc, VCE = 4 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 16 mAdc)
(IC = 8 Adc, IB = 80 mAdc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 8 Adc, IB = 80 mAdc)
VBE(sat)
—
4.5
Vdc
Base–Emitter On Voltage
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on)
—
2.8
Vdc
|hfe|
4
—
MHz
—
—
300
200
300
—
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
Small–Signal Current Gain
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)
(1) Pulse Test: Pulse Width
pF
MJD127
MJD122
hfe
300 µs, Duty Cycle
—
2%.
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
125
150
Figure 1. Power Derating
2
Motorola Bipolar Power Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
NPN MJD122
20,000
20,000
VCE = 4 V
VCE = 4 V
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
7000
5000
TJ = 150°C
3000
2000
25°C
1000
700
500
300
200
0.1
– 55°C
0.2
5000
TJ = 150°C
3000
2000
25°C
1000
– 55°C
500
0.3
0.5 0.7
1
2
3
5
7
300
200
0.1
10
0.2
0.5 0.7
0.3
IC, COLLECTOR CURRENT (AMP)
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
3
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. DC Current Gain
TJ = 25°C
2.6
IC = 2 A
4A
6A
2.2
1.8
1.4
1
0.3
0.5 0.7
2
1
3
5
10
7
20
30
3
TJ = 25°C
2.6
IC = 2 A
4A
6A
2.2
1.8
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20 30
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
3
3
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2
1.5
1
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
2
1.5
VBE @ VCE = 4 V
1
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
VBE(sat) @ IC/IB = 250
1
2
3
5
7
10
0.5
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
Motorola Bipolar Power Transistor Device Data
3
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD122
+5
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
PNP MJD127
*IC/IB ≤ hFE/3
+4
+3
+2
+1
0
25°C to 150°C
θVC for VCE(sat)
–1
–2
–3
– 55°C to 25°C
25°C to 150°C
θVB for VBE
– 55°C to 25°C
–4
–5
0.1
0.2 0.3
1
2 3
0.5
IC, COLLECTOR CURRENT (AMP)
5
7
+5
*IC/IB ≤ hFE/3
+4
+3
25°C to 150°C
+2
– 55°C to 25°C
+1
0
*θVC for VCE(sat)
–1
–2
–3
–4
–5
0.1
10
25°C to 150°C
θVB for VBE
– 55°C to 25°C
0.2 0.3
0.5 0.7 1
2 3
IC, COLLECTOR CURRENT (AMP)
5
7
10
Figure 5. Temperature Coefficients
105
105
REVERSE
FORWARD
IC, COLLECTOR CURRENT ( µ A)
IC, COLLECTOR CURRENT ( µ A)
REVERSE
104
VCE = 30 V
103
102
TJ = 150°C
101
100°C
100
25°C
10–1
0 – 0.2 – 0.4 – 0.6 – 0.8 – 1
+ 0.6 + 0.4 + 0.2
VBE, BASE–EMITTER VOLTAGE (VOLTS)
FORWARD
104
VCE = 30 V
103
102
TJ = 150°C
101
100
100°C
25°C
10–1
– 0.6 – 0.4 – 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
– 1.2 – 1.4
+ 1.2 + 1.4
Figure 6. Collector Cut–Off Region
300
5000
3000
2000
200
TJ = 25°C
C, CAPACITANCE (pF)
hfe , SMALL–SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
100
50
30
20
10
2
5
10
20
50 100
f, FREQUENCY (kHz)
200
Figure 7. Small–Signal Current Gain
4
100
70
Cib
50
PNP
NPN
1
Cob
500 1000
PNP
NPN
30
0.1
0.2
0.5
1
2
5
10
20
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
Motorola Bipolar Power Transistor Device Data
100
5
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC
– 30 V
RC SCOPE
RB
51
≈ 8 k ≈ 120
D1
+4V
25 µs
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
PNP
NPN
ts
tf
1
t, TIME ( µs)
TUT
V2
APPROX
+8 V
0
V1
APPROX
–12 V
3
2
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
0.2
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 9. Switching Times Test Circuit
1
0.7
0.5
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
td @ VBE(off) = 0 V
0.3
0.5 0.7 1
3
2
IC, COLLECTOR CURRENT (AMP)
5
7
10
Figure 10. Switching Times
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.03
SINGLE PULSE
RθJC(t) = r(t) RθJC
RθJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.01
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
t, TIME OR PULSE WIDTH (ms)
20
30
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
IC, COLLECTOR CURRENT (AMP)
Figure 11. Thermal Response
20
15
10
500 µs
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 12 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
< 150_C. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
5
3
2
0.5
0.3
0.2
5 ms
BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.1
0.05
0.03
0.02
1 ms
TJ = 150°C
1
1
2
3
5
7
10
20
dc
30
50
70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias
Safe Operating rea
Motorola Bipolar Power Transistor Device Data
5
COLLECTOR
PNP
BASE
COLLECTOR
NPN
BASE
≈8k
≈ 120
≈8k
EMITTER
≈ 120
EMITTER
Figure 13. Darlington Schematic
6
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
–T–
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
–––
0.030
0.050
0.138
–––
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
–––
0.77
1.27
3.51
–––
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369A–13
ISSUE W
C
B
V
E
R
4
A
1
2
3
S
–T–
K
SEATING
PLANE
J
F
H
D
G
3 PL
0.13 (0.005)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.090 BSC
0.034
0.040
0.018
0.023
0.350
0.380
0.175
0.215
0.050
0.090
0.030
0.050
STYLE 1:
PIN 1.
2.
3.
4.
T
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.46
1.27
2.28
0.77
1.27
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369–07
ISSUE K
Motorola Bipolar Power Transistor Device Data
7
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8
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Motorola Bipolar Power Transistor Device Data
*MJD122/D*
MJD122/D