Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 1/ 10 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN6N70FP BVDSS : 700V RDS(ON) : 1.23Ω (typ.) ID : 6A Description The MTN6N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Adapter • Switching Mode Power Supply Symbol Outline MTN6N70FP TO-220FP G：Gate D：Drain S：Source MTN6N70FP G D S CYStek Product Specification Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 2/ 10 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR EAR dv/dt 700 ±30 6* 3.6* 24* 135 6 5.4 4.5 V V A A A mJ A mJ V/ns TL 300 °C PD 54 0.3 -55~+150 W W/°C °C Tj, Tstg *Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=6A, VDD=50V, L=7mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤6A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN6N70FP Symbol Rth,j-c Rth,j-a Value 2.3 62.5 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 3/ 10 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 700 2.0 - 0.65 3 1.23 4.0 ±100 1 10 1.5 V V/°C V S nA Ω VGS=0, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=3A VGS=±30 VDS =650V, VGS =0 VDS =520V, VGS =0, Tj=125°C VGS =10V, ID=3A 19 5.1 6.9 12 13 25 13 1350 120 26 - nC ID=6A, VDS=520V, VGS=10V ns VDS=325V, ID=6A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz 330 2.8 6 24 1.5 - Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA A V ns μC IS=6A, VGS=0V VGS=0, IF=6A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN6N70FP MTN6N70FP Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton CYStek Product Specification CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 4/ 10 Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics 3.5 15 15V 10V 9V 7V 10 Static Drain-Source On-state Resistance-RDS(on)(Ω) Drain Current - ID(A) 20 6V 5.5V 5 5V 3 2.5 2 1.5 1 ID=3A, VGS=10V 0.5 VGS=4.5V 0 0 10 20 30 40 Drain-Source Voltage -VDS(V) 50 0 -100 60 -50 200 10 2 VGS=10V Drain Current-ID(on)(A) Static Drain-Source On-State Resistance-RDS(on)(Ω) 150 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 1.5 1 Ta=25°C VDS=10V 8 6 4 2 0 0.5 0.1 1 10 Drain Current-ID(A) 0 100 5 10 15 Gate-Source Voltage-VGS(V) 20 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 5 4.5 Ta=25°C VGS=0V 4 Forward Current-IF(A) Static Drain-Source On-State Resistance-RDS(ON)(Ω) 0 50 100 Ambient Temperature-Ta(°C) 3.5 3 2.5 2 1.5 ID=3A 1 10 Ta=150°C Ta=25°C 1 0.5 0.1 0 0 MTN6N70FP 2 4 6 8 10 Gate-Source Voltage-VGS(V) 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source Drain Voltage -VSD(V) CYStek Product Specification Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 5/ 10 CYStech Electronics Corp. Typical Characteristics(Cont.) Brekdown Voltage vs Ambient Temperature Capacitance vs Reverse Voltage 10000 Drain-Source Breakdown Voltage BVDSS(V) 800 Capacitance-(pF) Ciss 1000 Coss 100 f=1MHz 5 700 650 ID=250μA, VGS=0V Crss 10 0 750 10 15 20 25 Drain-to-Source Voltage-VDS(V) 600 -100 30 -50 0 50 150 200 Gate Charge Characteristics Maximum Safe Operating Area 12 100 10μs VDS=120V Gate-Source Voltage---VGS(V) Drain Current --- ID(A) 100 Ambient Temperature-Tj(°C) 100μs 10 1ms 10ms 1 100ms Operation in this area is limited by RDS(ON) DC 0.1 10 VDS=300V 8 VDS=520V 6 4 2 ID=6A 0 0.01 1 10 100 Drain-Source Voltage -VDS(V) 1000 0 2 4 6 8 10 12 14 16 18 20 Total Gate Charge---Qg(nC) Maximum Drain Current vs Case Temperature Maximum Drain Current---ID(A) 7 6 5 4 3 2 1 0 25 50 75 100 125 150 175 Case Temperature---TC(°C) MTN6N70FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 6/ 10 Typical Characteristics(Cont.) Transient Thermal Response Curves 10 D=0.5 ZθJC(t), Thermal Response 1 0.2 0.1 1.ZθJC(t)=2.3 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.1 0.05 0.02 0.01 0.01 Single P l 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN6N70FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 7/ 10 Test Circuit and Waveforms MTN6N70FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 8/ 10 Test Circuit and Waveforms(Cont.) MTN6N70FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 9/ 10 TO-220FP (C Forming) Dimension Marking: Device Name Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.059 0.069 0.020 0.030 0.392 0.408 DIM A A1 A2 A3 b b1 b2 c D Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.500 1.750 0.500 0.750 9.960 10.360 DIM E e F Φ h L L1 L2 Inches Min. Max. 0.583 0.598 0.100* 0.106 REF 0.138 REF 0.000 0.012 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 14.800 15.200 2.540* 2.700 REF 3.500 REF 0.000 0.300 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. MTN6N70FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C597FP Issued Date : 2010.01.28 Revised Date :2011.10.24 Page No. : 10/ 10 TO-220FP (S Forming) Dimension Marking: Device Name Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN6N70FP CYStek Product Specification