MA-COM MA4E2502L Surmounttm low, medium, and high barrier silicon schottky diode Datasheet

MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
Features
• Extremely Low Parasitic Capitance and Inductance
• Surface Mountable in Microwavable Circuits, No
Wirebonds Required
• Rugged HMIC Construction with Polyimide
Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16
hours)
• Lower Susceptibility to ESD Damage
M/A-COM Products
Rev. V7
The MA4E2502 Family of Surmount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors, and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or
soft substrate circuit with solder.
Case Style 1246
Description and Applications
The MA4E2502 SURMOUNTTM Series Diodes are
Silicon Low, Medium, and High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of
silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in
a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior mechanical performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes.
DIM
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
0.0445
0.0465
1.130
1.180
B
0.0169
0.0189
0.430
0.480
C
0.0040
0.0080
0.102
0.203
D Sq.
0.0128
0.0148
0.325
0.375
E
0.0128
0.0148
0.325
0.375
The multilayer metallization employed in the fabrication of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount placement and multi-functional polarity orientations.
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
Electrical Specifications @ 25°C
Model
Number
Type
Recommended
Freq. Range
Vf @ 1 mA
(mV)
Vb @ 10 uA
(V)
Ct @ 0 V
(pF)
Rt Slope Resistance
(Vf1-Vf2)/(10.5mA-9.5mA)
(Ω)
MA4E2502L
Low Barrier
DC - 18 GHz
330 Max
300 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
16 Typ
20 Max
MA4E2502M
Medium
Barrier
DC - 18 GHz
470 Max
420 Typ
0.12 Max
0.10 Typ
12 Typ
18 Max
MA4E2502H
High Barrier
DC - 18 GHz
700 Max
650 Typ
0.12 Max
0.10 Typ
11 Typ
15 Max
3 Min
5 Typ
3 Min
5 Typ
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
Handling
Die Bonding
All semiconductor chips should be handled with
care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped
tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to
minimize damage.
Die attach for these devices is made simple
through the use of surface mount die attach technology. Mounting pads are conveniently located on
the bottom surface of these devices, and are opposite the active junction. The devices are well suited
for high temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are
acceptable for usage. Die attach with Electrically
Conductive Silver Epoxy is Not Recommended.
The rugged construction of these Surmount devices allows the use of standard handling and die
attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions.
Bulk handling should insure that abrasion and mechanical shock are minimized.
Absolute Maximum Ratings @ 25°C
(unless otherwise noted) 1
Parameter
Absolute Maximum
Operating Temperature
-40°C to +125°C
Storage Temperature
-40°C to +150°C
Junction Temperature
+175°C
Forward Current
20 mA
Reverse Voltage
5V
RF C.W. Incident Power
+20 dBm
RF & DC Dissipated Power
50 mW
Electrostatic Discharge
2
( ESD ) Classification
2
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting
pads. Position the die so that its mounting pads
are aligned with the circuit board mounting pads.
Reflow the solder paste by applying equal heat to
the circuit at both die-mounting pads. The solder
joint must Not be made one at a time, creating unequal heat flow and thermal stress. Solder reflow
should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting
pads can be visually inspected through the die after
die attach is completed.
Class 0
2. Human Body Model
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
Applications Section
M/A-COM Products
Rev. V7
MA4E2502L-1246
Frequency (GHz) vs. Output Voltage (V)
10
Output Voltage (V)
-20 dBm
-10 dBm
1
0 dBm
+10 dBm
+20 dBm
0.1
0.01
8
11
14
17
20
23
Frequency (GHz)
MA4E2502L-1246
Input Pow er (dBm ) vs. Output Voltage (V)
Output Voltage (V)
10
1
8 GHz
18 GHz
23 GHz
0.1
0.01
-20
-15
-10
-5
0
5
10
Input Pow er (dBm )
The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a
50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm
connector and the output voltage was measured through a bias tee on a voltmeter.
Matching was not attempted.
3
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
MA4E2502L Low Barrier SPICE PARAMETERS
Is
(nA)
Rs
(Ω)
N
Cj0
(pF)
M
Ik
(mA)
Cjpar
(pF)
Vj
(V)
FC
BV
(V)
IBV
(mA)
26
12.8
1.20
1.0 E-2
0.5
14
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
MA4E2502M Medium Barrier SPICE PARAMETERS
Is
(mA)
Rs
(Ω)
N
Cj0
(pF)
M
Ik
(mA)
Cjpar
(pF)
Vj
(V)
FC
BV
(V)
IBV
(mA)
5 E-1
9.6
1.20
1.0 E-02
0.5
10
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
MA4E2502H High Barrier SPICE PARAMETERS
Is
(mA)
Rs
(Ω)
N
Cj0
(pF)
M
Ik
(mA)
Cjpar
(pF)
Vj
(V)
FC
BV
(V)
IBV
(mA)
5.7 E-1
6.5
1.20
1.0 E-02
0.5
4
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
Circuit Mounting Dimensions (Inches)
4
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E2502 Series
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
Ordering Information
Part Number
Package
MA4E2502L-1246W
Wafer on Frame
MA4E2502L-1246
Die in Carrier
MA4E2502L-1246T
Surf Tape on Reel
MADS-002502-1246LP
Pocket Tape on Reel
MA4E2502M-1246W
Wafer on Frame
MA4E2502M-1246
Die in Carrier
MA4E2502M-1246T
Surf Tape on Reel
MADS-002502-1246MP
Pocket Tape on Reel
MA4E2502H-1246W
Wafer on Frame
MA4E2502H-1246
Die in Carrier
MA4E2502H-1246T
Surf Tape on Reel
MADS-002502-1246HP
Pocket Tape on Reel
MA4E2502 Diode Schematic
Schematic Values
5
Model Number
Ls
(nH)
Rs
(Ω)
Rj
(Ω)
Ct
(pF)
MA4E2502L
0.8
12.8
26 / Idc (mA)
0.10
MA4E2502M
0.8
9.6
26 / Idc (mA)
0.10
MA4E2502H
0.8
6.5
26 / Idc (mA)
0.10
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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