ESJA09-10 (10kV/5mA) Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 10 27 min. Features High speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage o 0.5 27 min. Cathode Mark Type Mark Applications Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) 57 ESJA09-10 種07. 機 定 h 20 Maximum Ratings and Characteristics White Absolute Maximum Ratings 予 止 rc a m V 10 n Repetitive Peak Renerse Voltage kV o e . t le 5sign o I Ta=25°C,Resistive Load Average Output Current mA s e b d o 10mS Sine-half bewave new 0.5 I Suege Current A d e r peak value l o f du nd T che 120 Junction Temperature °C e s m s i ct Tcrecom 100 Allowable Operation Case Temperature °C u d t o o pr N T Storage Temperatureis -40 to +120 °C h T Items Symbols RRM O 月 3 年 7 00 FSM Condition ESJA09-10 Units 廃 守 保 peak j 2 stg Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions ESJA09-10 Units Maximum Forward Voltage Drop VF at 25°C,IF=10mA 35 Maximum Reverse Current IR1 at 25°C,VR=10kV 2 µA IR2 at 100°C,VR=10kV 5 µA V Maximum Reverse Recovery Time trr at 25°C,IF=2mA,IR=4mA 0.05 µs Junction Capacitance Cj at 25°C,VR=0V,f=1MHz 1 pF ESJA09-10 (10kV/5mA) Characteristics Reverse characteristic (VR-IR) Forward characteristic (VF-IF) Typical Typical 10 Ta=25°C 30 Toil=100°C 25 IR (µA) IF (mA) 1 20 15 0.1 10 5 0.01 10 15 20 25 30 35 40 45 2 50 3 4 5 6 7 8 9 10 種07. 機 定 h 20 VR (kV) VF (V) rc a 予 止 on m Reverse recovery time characteristic (Ta-trr) Avalanche characteristic (Vz-Iz) Typical Typical ete ign. 廃 l o 守 obs des 130 Ta=25°C 120 100 IF/IR=2/4mA 75%Recovery 保uled befor new 110 月sched mend 3 年 is com t 7 c 00 odu t re trr (ns) Iz (µA) 100 10 2 his pr 80 70 No T 90 60 50 40 1 30 10 11 12 13 14 15 Vz (kV) 16 17 18 19 20 50 60 70 80 90 Ta (°C) 100 110 120 130