Siemens BFN20 Npn silicon high-voltage transistor (suitable for video output stages in tv sets and switching power supplies high breakdown voltage) Datasheet

NPN Silicon High-Voltage Transistor
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BFN 20
Suitable for video output stages in TV sets
and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Low capacitance
Complementary type: BFN 21 (PNP)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
BFN 20
DC
Q62702-F1058
B
SOT-89
C
E
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
300
V
Collector-base voltage
VCB0
300
Collector-emitter voltage, RBE = 2.7 kΩ
VCER
300
Emitter-base voltage
VEB0
5
Collector current
IC
50
Peak collector current
ICM
100
Total power dissipation, TS = 120 ˚C
Ptot
1
W
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient2)
Rth JA
≤
90
Junction - soldering point
Rth JS
≤
30
mA
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BFN 20
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Values
Symbol
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
V(BR)CE0
300
–
–
V
Collector-base breakdown voltage
IC = 10 µA
V(BR)CB0
300
–
–
Collector-emitter breakdown voltage
IC = 10 µA, RBE = 2.7 kΩ
V(BR)CER
300
–
–
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0
5
–
–
Collector-base cutoff current
VCB = 250 V
VCB = 250 V, TA = 150 ˚C
ICB0
–
–
–
–
100
20
Collector cutoff current
VCE = 300 V, RBE = 2.7 kΩ
VCE = 300 V, TA = 150 ˚C, RBE = 2.7 kΩ
ICER
–
–
–
–
1
50
Emitter-base cutoff current
VEB = 5 V
IEB0
–
–
10
DC current gain1)
IC = 25 mA, VCE = 20 V
hFE
40
–
–
–
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
VCEsat
–
–
0.5
V
Base-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
VBEsat
–
–
1
Transition frequency
IC = 10 mA, VCE = 10 V, f = 20 MHz
fT
–
100
–
MHz
Output capacitance
VCB = 30 V, f = 1 MHz
Cobo
–
0.8
–
pF
nA
µA
µA
AC characteristics
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BFN 20
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Output capacitance Cobo = f (VCE)
f = 1 MHz
Permissible pulse load Ptot max / Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 10 V
Semiconductor Group
3
BFN 20
Collector current IC = f (VBE)
VCE = 20 V
Collector cutoff current ICB0 = f (TA)
VCB = 250 V
DC current gain hFE = f (IC)
VCE = 20 V
Semiconductor Group
4