PD -95340A
IRF5805PbF
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HEXFET® Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
VDSS
RDS(on) max
ID
-30V
0.098@VGS = -10V
0.165@VGS = -4.5V
-3.8A
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
-3.0A
A
D
D
1
6
D
2
5
D
G
3
4
S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-3.8
-3.0
-15
2
1.28
0.02
± 20
-55 to + 150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Max.
Units
62.5
°C/W
1
04/20/10
IRF5805PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
-1.0
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
–––
–––
–––
–––
–––
–––
–––
–––
11
2.3
1.5
11
14
90
49
511
79
50
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.098
VGS = -10V, ID = -3.8A
Ω
0.165
VGS = -4.5V, ID = -3.0A
-2.5
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -3.8A
-15
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
17
ID = -3.8A
–––
nC
VDS = -15V
–––
VGS = -10V
17
VDD = -15V, VGS = -10V
21
ID = -1.0A
ns
135
RG = 6.0Ω
74
RD = 15Ω
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-2.0
-15
–––
–––
–––
–––
19
16
-1.2
29
24
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board, t ≤ 10sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF5805PbF
VGS
TOP
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
10
1
0.1
-2.5V
100
10
1
-2.5V
0.1
0.01
0.01
1
10
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
10
TJ = 150° C
TJ = 25 ° C
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
10
100
Fig 2. Typical Output Characteristics
100
0.1
2.0
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
VGS
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
6.0
2.0
ID = -3.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF5805PbF
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
600
Ciss
400
200
Coss
Crss
16
-VGS , Gate-to-Source Voltage (V)
800
0
1
10
8
4
0
4
6
8
10
12
14
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
10
TJ = 150° C
1
TJ = 25 ° C
0.1
0.0
0.5
1.0
1.5
2.0
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
10us
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
V DS=-24V
V DS=-15V
12
0
100
ID = -3.8A
3.0
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5805PbF
4.0
VDS
-ID , Drain Current (A)
V GS
3.0
RD
D.U.T.
RG
-
+
VDD
VGS
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
10%
150
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.500
RDS ( on ) , Drain-to-Source On Resistance (Ω )
(
RDS(on), Drain-to -Source On ResistanceΩ)
IRF5805PbF
0.450
0.400
0.350
0.300
0.250
0.200
ID = -3.8A
0.150
0.100
0.050
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.400
0.300
VGS = -4.5V
0.200
VGS = -10V
0.100
0.000
0
5
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10
15
20
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF5805PbF
30
2.5
25
2.3
Power (W)
-VGS(th) ( V )
20
ID = -250µA
2.1
1.9
15
10
1.7
5
0
1.5
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF5805PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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8
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF5805PbF
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2010
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9