TI LM5104M High-voltage half-bridge gate driver with adaptive delay Datasheet

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LM5104
SNVS269D – JANUARY 2004 – REVISED DECEMBER 2014
LM5104 High-Voltage Half-Bridge Gate Driver With Adaptive Delay
1 Features
3 Description
•
The LM5104 High-Voltage Gate Driver is designed to
drive both the high-side and the low-side N-channel
MOSFETs in a synchronous buck configuration. The
floating high-side driver can work with supply voltages
up to 100 V. The high-side and low-side gate drivers
are controlled from a single input. Each change in
state is controlled in an adaptive manner to prevent
shoot-through issues. In addition to the adaptive
transition timing, an additional delay time can be
added, proportional to an external setting resistor. An
integrated high-voltage diode is provided to charge
high-side gate drive bootstrap capacitor. A robust
level shifter operates at high speed while consuming
low power and providing clean level transitions from
the control logic to the high-side gate driver.
Undervoltage lockout is provided on both the low-side
and the high-side power rails. This device is available
in the standard SOIC and the WSON packages.
1
•
•
•
•
•
•
•
Drives Both a High-Side and Low-Side N-Channel
MOSFET
Adaptive Rising and Falling Edges With
Programmable Additional Delay
Single Input Control
Bootstrap Supply Voltage Range up to 118-V DC
Fast Turnoff Propagation Delay (25 ns Typical)
Drives 1000-pF Loads With 15-ns Rise and Fall
Times
Supply Rail Undervoltage Lockout
SOIC and WSON-10 4-mm × 4-mm Package
2 Applications
•
•
•
•
Current Fed Push-Pull Power Converters
High Voltage Buck Regulators
Active Clamp Forward Power Converters
Half-Bridge and Full-Bridge Converters
Device Information(1)
PART NUMBER
LM5104
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.91 mm
WSON (10)
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Block Diagram
HV
UVLO
LEVEL
SHIFT
HO
DRIVER
HS
IN
RT
VDD
UVLO
DRIVER
LO
VSS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM5104
SNVS269D – JANUARY 2004 – REVISED DECEMBER 2014
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
6
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 10
8
Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Application ................................................. 11
9
Power Supply Recommendations...................... 14
9.1 Power Dissipation Considerations .......................... 14
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Example .................................................... 16
11 Device and Documentation Support ................. 16
Detailed Description .............................................. 9
11.1 Trademarks ........................................................... 16
11.2 Electrostatic Discharge Caution ............................ 16
11.3 Glossary ................................................................ 16
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
12 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (March 2013) to Revision D
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision B (March 2013) to Revision C
•
2
Page
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 11
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5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
VDD
1
8
LO
HB
2
7
VSS
HO
3
6
IN
HS
4
5
RT
SOIC-8
DPR Package
10-Pin WSON
Top View
VDD
1
10
HB
2
9
VSS
HO
3
8
IN
HS
4
7
RT
NC
5
6
NC
LO
Pin Functions
PIN
SOIC
WSON
1
1
NAME
VDD
DESCRIPTION
APPLICATION INFORMATION
Positive gate drive supply
Locally decouple to VSS using ESR/ESL capacitor, located
as close to IC as possible.
2
2
HB
High-side gate driver bootstrap rail
Connect the positive terminal to bootstrap capacitor to the
HB pin and connect negative terminal to HS. The
Bootstrap capacitor should be placed as close to IC as
possible
3
3
HO
High-side gate driver output
Connect to gate of high-side MOSFET with short low
inductance path.
4
4
HS
High-side MOSFET source connection
Connect to bootstrap capacitor negative terminal and
source of high-side MOSFET.
5
7
RT
Deadtime programming pin
Resistor from RT to ground programs the deadtime
between high- and low-side transitions. The resistor
should be located close to the IC to minimize noise
coupling from adjacent traces.
6
8
IN
Control input
Logic 1 equals High-side ON and Low-side OFF. Logic 0
equals High-side OFF and Low-side ON.
7
9
VSS
Ground return
All signals are referenced to this ground.
8
10
LO
Low-side gate driver output
Connect to the gate of the low-side MOSFET with a short
low inductance path.
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6 Specifications
6.1 Absolute Maximum Ratings (1) (2)
MIN
MAX
UNIT
VDD to VSS
–0.3
18
V
VHB to VHS
–0.3
18
V
IN to VSS
–0.3
VDD + 0.3
V
LO Output
–0.3
VDD + 0.3
V
HO Output
VHS – 0.3
VHB + 0.3
V
VHS to VSS
−1
100
V
118
V
VHB to VSS
RT to VSS
–0.3
Junction Temperature
Storage temperature range, Tstg
(1)
(2)
–55
5
V
150
°C
150
°C
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Recommended Operating Conditions
under which operation of the device is specified. Recommended Operating Conditions do not imply performance limits. For performance
limits and associated test conditions, see Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
6.2 ESD Ratings
V(ESD)
(1)
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
Electrostatic discharge
VALUE
UNIT
±2000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
VDD
MIN
MAX
9
14
V
V
HS
–1
100
HB
VHS + 8
VHS + 14
HS Slew Rate
Junction Temperature
UNIT
V
< 50
V/ns
125
°C
–40
6.4 Thermal Information
LM5104
THERMAL METRIC (1)
D
DPR
8 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
114.5
37.9
RθJC(top)
Junction-to-case (top) thermal resistance
61.1
38.1
RθJB
Junction-to-board thermal resistance
55.6
14.9
ψJT
Junction-to-top characterization parameter
9.7
0.4
ψJB
Junction-to-board characterization parameter
54.9
15.2
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
4.4
(1)
4
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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6.5 Electrical Characteristics
MIN and MAX limits apply over the full operating junction temperature range. Unless otherwise specified, TJ = +25°C, VDD =
VHB = 12 V, VSS = VHS = 0 V, RT = 100kΩ. No Load on LO or HO.
PARAMETER
TEST CONDITIONS
MIN (1)
TYP
MAX (1)
UNIT
SUPPLY CURRENTS
IDD
VDD Quiescent Current
LI = HI = 0 V
0.4
0.6
mA
IDDO
VDD Operating Current
f = 500 kHz
1.9
3
mA
IHB
Total HB Quiescent Current
LI = HI = 0 V
0.06
0.2
mA
IHBO
Total HB Operating Current
f = 500 kHz
1.3
3
mA
IHBS
HB to VSS Current, Quiescent
VHS = VHB = 100 V
0.05
10
IHBSO
HB to VSS Current, Operating
f = 500 kHz
0.08
µA
mA
INPUT PINS
VIL
Low Level Input Voltage Threshold
VIH
High Level Input Voltage Threshold
RI
Input Pulldown Resistance
0.8
100
1.8
V
1.8
2.2
V
200
500
kΩ
TIME DELAY CONTROLS
VRT
Nominal Voltage at RT
IRT
RT Pin Current Limit
2.7
3
3.3
V
0.75
1.5
2.25
mA
TD1
Delay Timer, RT = 10 kΩ
58
90
130
ns
TD2
Delay Timer, RT = 100 kΩ
140
200
270
ns
6.0
6.9
7.4
V
RT = 0 V
UNDER VOLTAGE PROTECTION
VDDR
VDD Rising Threshold
VDDH
VDD Threshold Hysteresis
VHBR
HB Rising Threshold
VHBH
HB Threshold Hysteresis
0.5
5.7
6.6
V
7.1
0.4
V
V
BOOT STRAP DIODE
VDL
Low-Current Forward Voltage
IVDD-HB = 100 µA
0.60
0.9
VDH
High-Current Forward Voltage
IVDD-HB = 100 mA
0.85
1.1
V
V
RD
Dynamic Resistance
IVDD-HB = 100 mA
0.8
1.5
Ω
LO GATE DRIVER
VOLL
Low-Level Output Voltage
ILO = 100 mA
0.25
0.4
V
VOHL
High-Level Output Voltage
ILO = –100 mA
VOHL = VDD – VLO
0.35
0.55
V
IOHL
Peak Pullup Current
VLO = 0 V
1.6
A
IOLL
Peak Pulldown Current
VLO = 12 V
1.8
A
HO GATE DRIVER
VOLH
Low-Level Output Voltage
IHO = 100 mA
0.25
0.4
V
VOHH
High-Level Output Voltage
IHO = –100 mA,
VOHH = VHB – VHO
0.35
0.55
V
IOHH
Peak Pullup Current
VHO = 0 V
1.6
A
IOLH
Peak Pulldown Current
VHO = 12 V
1.8
A
(1)
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
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6.6 Switching Characteristics
MAX limits apply over the full operating junction temperature range. Unless otherwise specified, TJ = +25°C, VDD = VHB = 12
V, VSS = VHS = 0 V, No Load on LO or HO .
PARAMETER
MIN (1)
TEST CONDITIONS
TYP
MAX (1)
UNIT
tLPHL
Lower Turn-Off Propagation Delay
(IN Rising to LO Falling)
25
56
tHPHL
Upper Turn-Off Propagation Delay
(IN Falling to HO Falling)
25
56
tRC, tFC
Either Output Rise/Fall Time
CL = 1000 pF
15
tR, tF
Either Output Rise/Fall Time (3V to 9V)
CL = 0.1 µF
0.6
µs
tBS
Bootstrap Diode Turn-Off Time
IF = 20 mA, IR = 200 mA
50
ns
(1)
ns
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
6.7 Typical Characteristics
100
2.0
VDD = 12V CL = 4400 pF
IDDO
RT = 10k
1.9
10
1.7
CURRENT (mA)
CURRENT (mA)
CL = 1000 pF
CL = 2200 pF
CL = 470 pF
1
1.5
1.3
1.1
CL = 0 pF
IHBO
0.9
0
10
1
100
0.7
-50 -25
1000
0
25
50
75
100 125 150
FREQUENCY (kHz)
TEMPERATURE (°C)
Figure 1. IDD vs Frequency
Figure 2. Operating Current vs Temperature
1.20
1.20
IDD, RT = 10k
1.00
IDD, RT = 10k
CURRENT (mA)
CURRENT (mA)
1.00
0.80
0.60
IDD, RT = 100k
0.40
0.20
0.00
9
0.60
IDD, RT = 100k
0.40
0.20
IHB, RT = 10k, 100k
8
0.80
10 11 12 13 14 15 16 17 18
0.00
-50
-25
0
25
50
75 100 125 150
TEMPERATURE (°C)
VDD, VHB (V)
Figure 3. Quiescent Current vs Supply Voltage
6
IHB, RT = 10k, 100k
Figure 4. Quiescent Current vs Temperature
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Typical Characteristics (continued)
100000
2.00
HB = 12V,
HS = 0V
1.60
CL = 2200 pF
10000
VDD = VHB = 12V, HS = 0V
1.80
CL = 4400 pF
CURRENT (A)
CURRENT (PA)
1.40
CL = 1000 pF
1000
1.20
SOURCING
1.00
0.80
SINKING
0.60
100
0.40
CL = 0 pF
0.20
CL = 470 pF
10
0.1
0.00
1
10
100
0
1000
2
4
6
8
10
12
HO, LO (V)
FREQUENCY (kHz)
Figure 6. HO & LO Peak Output Current vs Output Voltage
Figure 5. IHB vs Frequency
0.60
1.00E-01
T = 150°C
0.55
1.00E-02
VDDH
0.50
HYSTERESIS (V)
T = 25°C
ID (A)
1.00E-03
1.00E-04
0.45
VHBH
0.40
T = -40°C
1.00E-05
0.35
1.00E-06
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.30
-50
0.9
-25 0_
25 50_ 75_100_125_150_
TEMPERATURE (oC)
VD (V)
Figure 8. Undervoltage Threshold Hysteresis vs
Temperature
Figure 7. Diode Forward Voltage
0.700
7.30
7.20
0.600
VDD = VHB = 8V
7.00
0.500
VDDR
6.90
VOH (V)
THRESHOLD (V)
7.10
6.80
6.70
VHBR
6.60
VDD = VHB = 12V
0.400
0.300
VDD = VHB = 16V
6.50
0.200
6.40
6.30
-50 -25
0
25
50
75 100 125 150
0.100
-50 -25
0
25
50
75 100 125 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Undervoltage Rising Threshold vs Temperature
Figure 10. LO and HO Gate Drive—High-Level Output
Voltage vs Temperature
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Typical Characteristics (continued)
0.400
40.0
38.0
0.350
36.0
VDD = VHB = 8V
34.0
VDD = VHB = 12V
DELAY (ns)
VOL (V)
0.300
0.250
TLPHL
32.0
30.0
28.0
0.200
26.0
VDD = VHB = 16V
THPHL
24.0
0.150
22.0
0.100
-50
-25
0
25
20.0
-50 -25
75 100 125 150
0
25
50
75 100 125 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. LO and HO Gate Drive—Low-Level Output
Voltage vs Temperature
Figure 12. Turn Off Propagation Delay vs Temperature
120
220
110
200
TIME (ns)
90
180
LO,HO Turn On
Delay (tD)
160
80
ad
70
De
tive
ffec + t RT)
E
(t P
,HO
LO Time
60
50
40
30
TIME (ns)
100
0
25
LO,HO Effective Dead
Time (tP + tRT)
140
120
LO,HO Turn On
Delay (tD)
100
80
60
LO,HO Turn Off
Delay (tD)
20
-50 -25
8
50
LO,HO Turn Off Delay (tD)
40
50
20
-50 -25
75 100 125 150
0
25
50
75 100 125 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 13. Timing vs Temperature RT = 10K
Figure 14. Timing vs Temperature RT = 100K
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7 Detailed Description
7.1 Overview
The LM5104 High Voltage gate driver is designed to drive both the high side and the low side N-Channel
MOSFETs in a synchronous buck configuration. The floating high-side driver is capable of working with supply
voltages up to 100 V. The high side and low side gate drivers are controlled from a single input. Each change in
state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition
timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high
voltage diode is provided to charge high side gate drive bootstrap capacitor. A robust level shifter operates at
high speed while consuming low power and providing clean level transitions from the control logic to the high
side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails.
7.2 Functional Block Diagram
HV
LEVEL
SHIFT
UVLO
HO
DRIVER
HS
IN
RT
VDD
UVLO
DRIVER
LO
VSS
7.3 Feature Description
7.3.1 Adaptive Shoot-Through Protection
LM5104 is a high voltage, high speed dual output driver designed to drive top and bottom MOSFET’s connected
in synchronous buck or half-bridge configuration, from one externally provided PWM signal. LM5104 features
adaptive delay to prevent shoot-through current through top and bottom MOSFETs during switching transitions.
Referring to the timing diagram Figure 16, the rising edge of the PWM input (IN) turns off the bottom MOSFET
(LO) after a short propagation delay (tP). An adaptive circuit in the LM5104 monitors the bottom gate voltage (LO)
and triggers a programmable delay generator when the LO pin falls below an internally set threshold (≈ Vdd/2).
The gate drive of the upper MOSFET (HO) is disabled until the deadtime expires. The upper gate is enabled
after the TIMER delay (tP+TRT), and the upper MOSFET turns-on. The additional delay of the timer prevents
lower and upper MOSFETs from conducting simultaneously, thereby preventing shoot-through.
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Feature Description (continued)
A falling transition on the PWM signal (IN) initiates the turn-off of the upper MOSFET and turn-on of the lower
MOSFET. A short propagation delay (tP) is encountered before the upper gate voltage begins to fall. Again, the
adaptive shoot-through circuitry and the programmable deadtime TIMER delays the lower gate turn-on time. The
upper MOSFET gate voltage is monitored and the deadtime delay generator is triggered when the upper
MOSFET gate voltage with respect to ground drops below an internally set threshold (≈ Vdd/2). The lower gate
drive is momentarily disabled by the timer and turns on the lower MOSFET after the deadtime delay expires
(tP+TRT).
The RT pin is biased at 3V and current limited to 1mA. It is designed to accommodate a resistor between 5K and
100K, resulting in an effective dead-time proportional to RT and ranging from 90ns to 200ns. RT values below 5K
will saturate the timer and are not recommended.
7.3.2 Start-up and UVLO
Both top and bottom drivers include undervoltage lockout (UVLO) protection circuitry which monitors the supply
voltage (VDD) and bootstrap capacitor voltage (VHB – VHS) independently. The UVLO circuit inhibits each driver
until sufficient supply voltage is available to turn-on the external MOSFETs, and the built-in hysteresis prevents
chattering during supply voltage transitions. When the supply voltage is applied to VDD pin of LM5104, the top
and bottom gates are held low until VDD exceeds UVLO threshold, typically about 6.9 V. Any UVLO condition on
the bootstrap capacitor will disable only the high-side output (HO).
7.4 Device Functional Modes
10
IN Pin
LO Pin
L
H
L
H
L
H
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HO Pin
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LM5104 is one of the latest generation of high-voltage gate drivers which are designed to drive both the
high-side and low-side N-channel MOSFETs in a half-bridge/full bridge configuration or in a synchronous buck
circuit. The floating high-side driver can operate with supply voltages up to 100 V. This allows for N-channel
MOSFET control in half-bridge, full-bridge, push-pull, two switch forward and active clamp topologies.
Table 1. Highlights
FEATURE
BENEFIT
Adaptive Rising and Falling Edges with Programmable Additional
Delay
Allows optimization of gate drive timings to account for device
differences between high-side and low-side positions.
Single Input Control
Direct drive from lower cost PWM controllers
Internal Bootstrap Diode
Reduces parts count and PCB real estate
8.2 Typical Application
(Optional external
fast recovery diode)
VIN
VCC
RGATE
HB
VDD
VDD
HO
OUT1
IN
HS
CBOOT
PWM
CONTROLLER
LM5104
OUT2
LO
RT
GND
L
C
VSS
Figure 15. LM5104 Driving MOSFETs Connected in Synchronous Buck Configuration
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Typical Application (continued)
8.2.1 Design Requirements
PARAMETER
VALUE
Gate Driver IC
LM5104
Mosfet
CSD18531Q5A
VDD
10 V
Qgmax
43 nC
Fsw
200 kHz
DMax
95%
IHBO
10 µA
VDH
1.1 V
VHBR
7.1 V
VHBH
0.4 V
8.2.2 Detailed Design Procedure
ΔVHB = VDD – VDH – VHBL
where
•
•
•
CBOOT =
VDD = Supply voltage of the gate drive IC
VDH = Bootstrap diode forward voltage drop
Vgsmin = Minimum gate source threshold voltage
(1)
QTOTAL
DVHB
(2)
QTOTAL = Qgmax + IHBO ´
DMax
FSW
(3)
The quiescent current of the bootstrap circuit is 10 µA which is negligible compared to the Qgs of the MOSFET.
0.95
QTOTAL = 43nC + 10mA ´
100kHz
(4)
QTOTAL = 43.01 nC
(5)
In practice the value for the CBOOT capacitor should be greater than that calculated to allow for situations where
the power stage may skip pulse due to load transients. In this circumstance the boot capacitor must maintain the
HB pin voltage above the UVLO voltage for the HB circuit.
As a general rule the local VDD bypass capacitor should be 10 times greater than the value of CBOOT.
VHBL = VHBR – VHBH
VHBL = 6.7 V
ΔVHB = 10 V – 1.1 V – 6.7 V
ΔVHB = 2.2 V
CBOOT =
(6)
(7)
(8)
(9)
43.01nc
2.2V
(10)
(11)
CBOOT = 19.54 nF
The bootstrap and bias capacitors should be ceramic types with X7R dielectric. The voltage rating should be
twice that of the maximum VDD to allow for loss of capacitance once the devices have a DC bias voltage across
them and to ensure long-term reliability of the devices.
An additional delay turn-on delay can be programmed using an external resistor, RT. Figure 17 shows the
relationship between the turnon delay time and the resistor value for RT.
12
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8.2.3 Application Curves
VDD
HB
IN
Adapt
Logic
DLY
Logic
Driver
Adapt
Logic
DLY
Logic
Driver
HO
HS
LO
LM5104
VSS
RT
50%
LM5104
WAVEFORMS
IN
tp+TRT
LO
tp
50%
tp
tp+TRT
50%
HO
Td
Td
Figure 16. Application Timing Waveforms
200
VDD = 12V, HB = 12V,
CL = 0, HS = 0
DELAY (ns)
175
150
THPLH
125
TLPLH
100
75
10
20
30
40
50
60
70
80
90 100
RT (k:)
Figure 17. Turn On Delay vs RT Resistor Value
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9 Power Supply Recommendations
9.1 Power Dissipation Considerations
The total IC power dissipation is the sum of the gate driver losses and the bootstrap diode losses. The gate
driver losses are related to the switching frequency (f), output load capacitance on LO and HO (CL), and supply
voltage (VDD) and can be roughly calculated as:
PDGATES = 2 • f • CL • VDD2
(12)
There are some additional losses in the gate drivers due to the internal CMOS stages used to buffer the LO and
HO outputs. The plot in Figure 18 shows the measured gate driver power dissipation versus frequency and load
capacitance. At higher frequencies and load capacitance values, the power dissipation is dominated by the
power losses driving the output loads and agrees well with Equation 12. This plot can be used to approximate
the power losses due to the gate drivers.
1.000
CL = 4400 pF
CL = 2200 pF
POWER (W)
0.100
CL = 1000 pF
0.010
CL = 470 pF
CL = 0 pF
0.001
0.1
_
1.0
_
10.0_
100.0
1000.0_
SWITCHING FREQUENCY (kHz)
Figure 18. Gate Driver Power Dissipation (LO + HO)
VCC = 12V, Neglecting Diode Losses
The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the
bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these
events happens once per cycle, the diode power loss is proportional to frequency. Larger capacitive loads
require more current to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (VIN) to
the half bridge result in higher reverse recovery losses. The following plot was generated based on calculations
and lab measurements of the diode recovery time and current under several operating conditions. This can be
useful for approximating the diode power dissipation.
14
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Power Dissipation Considerations (continued)
1.000
1.000
CL = 4400 pF
0.100
POWER (W)
POWER (W)
CL = 4400 pF
CL = 0 pF
0.010
0.001
1.0 kHz
0.100
CL = 0 pF
0.010
10.0 kHz
100.0 kHz
1000.0 kHz
0.001
1.0 kHz
SWITCHING FREQUENCY (kHz)
10.0 kHz
100.0 kHz
1000.0 kHz
SWITCHING FREQUENCY (kHz)
Figure 19. Diode Power Dissipation VIN = 80V
Figure 20. Diode Power Dissipation VIN = 40V
The total IC power dissipation can be estimated from the above plots by summing the gate drive losses with the
bootstrap diode losses for the intended application. Because the diode losses can be significant, an external
diode placed in parallel with the internal bootstrap diode (refer to Figure 15) can be helpful in removing power
from the IC. For this to be effective, the external diode must be placed close to the IC to minimize series
inductance and have a significantly lower forward voltage drop than the internal diode.
10 Layout
10.1 Layout Guidelines
The optimum performance of high- and low-side gate drivers cannot be achieved without taking due
considerations during circuit board layout. Following points are emphasized.
1. A low ESR/ESL capacitor must be connected close to the IC, and between VDD and VSS pins and between
HB and HS pins to support high peak currents being drawn from VDD during turnon of the external MOSFET.
2. To prevent large voltage transients at the drain of the top MOSFET, a low ESR electrolytic capacitor must be
connected between MOSFET drain and ground (VSS).
3. To avoid large negative transients on the switch node (HS) pin, the parasitic inductances in the source of top
MOSFET and in the drain of the bottom MOSFET (synchronous rectifier) must be minimized.
4. Grounding considerations:
– a) The first priority in designing grounding connections is to confine the high peak currents from charging
and discharging the MOSFET gate in a minimal physical area. This will decrease the loop inductance and
minimize noise issues on the gate terminal of the MOSFET. The MOSFETs should be placed as close as
possible to the gate driver.
– b) The second high current path includes the bootstrap capacitor, the bootstrap diode, the local ground
referenced bypass capacitor and low-side MOSFET body diode. The bootstrap capacitor is recharged on
the cycle-by-cycle basis through the bootstrap diode from the ground referenced VDD bypass capacitor.
The recharging occurs in a short time interval and involves high peak current. Minimizing this loop length
and area on the circuit board is important to ensure reliable operation.
5. The resistor on the RT pin must be placed very close to the IC and seperated from high current paths to
avoid noise coupling to the time delay generator which could disrupt timer operation.
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10.2 Layout Example
CBOOT
Q HS
C VDD
LM5104
Q LS
Figure 21. LM5104 Component Placement
11 Device and Documentation Support
11.1 Trademarks
All trademarks are the property of their respective owners.
11.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
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PACKAGE OPTION ADDENDUM
www.ti.com
7-Nov-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM5104M
NRND
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 125
5104
M
LM5104M/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
5104
M
LM5104MX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
5104
M
LM5104SD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
5104SD
LM5104SDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
5104SD
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Nov-2014
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
7-Nov-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM5104MX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5104SD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5104SDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
7-Nov-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM5104MX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM5104SD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM5104SDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
DPR0010A
SDC10A (Rev A)
www.ti.com
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