Central CS39-4B Silicon controlled rectifier 4.0 amp, 200 thru 800 volt Datasheet

CS39-4B
CS39-4D
CS39-4M
CS39-4N
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS39-4B series
types are hermetically sealed silicon controlled
rectifiers designed for sensing circuit applications and
control systems.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
CS39
SYMBOL
-4B
Peak Repetitive Off-State Voltage
VDRM, VRRM 200
RMS On-State Current (TC=90°C)
IT(RMS)
CS39
-4D
400
CS39
-4M
600
CS39
-4N
800
UNITS
V
4.0
A
35
A
4.5
A2s
PGM
PG(AV)
IGM
3.0
W
0.2
W
1.2
A
-40 to +125
°C
Thermal Resistance
TJ
Tstg
ΘJA
Thermal Resistance
ΘJC
Peak One Cycle Surge Current (t=10ms)
I2t
Value for Fusing (t=10ms)
Peak Gate Power Dissipation (tp=10μs)
Average Gate Power Dissipation
Peak Gate Current (tp=10μs)
Operating Junction Temperature
Storage Temperature
ITSM
I2t
ELECTRICAL
SYMBOL
IDRM, IRRM
IDRM, IRRM
CHARACTERISTICS: (TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
Rated VDRM, VRRM, RGK=1.0KΩ
Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
IGT
IH
VD=12V, RL=10Ω
IT=50mA, RGK=1.0KΩ
VGT
0.2
VTM
VD=12V, RL=10Ω
VD=300V, RGK=1.0KΩ, TC=125°C
IT=8.0A, tp=380μs
dv/dt
VD=⅔VDRM, RGK=1.0KΩ, TC=125°C
10
VGD
-65 to +150
°C
180
°C/W
10
°C/W
TYP
MAX
5.0
UNITS
μA
200
μA
38
200
μA
0.25
5.0
mA
0.55
0.8
V
V
1.6
1.95
V
V/μs
R3 (19-September 2012)
CS39-4B
CS39-4D
CS39-4M
CS39-4N
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 800 VOLTS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Gate
3) Anode
MARKING: FULL PART NUMBER
R3 (19-September 2012)
w w w. c e n t r a l s e m i . c o m
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