HED882 (NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : D882 FEATURES Power Dissipation SOT-89 1:BASE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 3 A Collector Power Dissipation PC 0.5 W Thermal Resistance From Junction to Ambient RӨJA 250 °C/W Junction Temperature TJ 150 °C Storage Temperature Tstg -55~150 °C 2:COLLECTOR 3:EMITTER ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=100uA,IE =0 40 V Collector-Emitter Breakdown Voltage VCEO IC=10mA,IB=0 30 V Emitter-Base Breakdown Voltage VEBO IE=100uA,IC=0 6 V Collector Cut-off Current ICBO VCB=40V,IE=0 1 uA Collector Cut-off Current ICEO VCB=30V,IE=0 10 uA Emitter Cut-off Current IEBO VEB=6V,IC=0 1 uA hFE(1) VCE=2V,IC=1A 60 hFE(2) VCE=2V,IC=100mA 32 Collector-Emitter Saturation Voltage VCE(sat) IC=2A ,IB=0.2A 0.5 V Base-Emitter Voltage VBE VCE=2V,IC=0.2A 1.5 V Transition Frequency fT VCE=5V,IC=0.1A, f=10MHz DC Current Gain Min Typ Max Unit 400 50 MHz CLASSIFICATION OF hFE Marking Range ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD R O Y GR 60-120 100-200 163-320 200-400 E-mail:[email protected] 1/ 4 HED882 (NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics Static Characteristic 2.00 10mA 9mA COLLECTOR CURRENT IC (A) 1.75 hFE 1000 —— IC COMMON EMITTER Ta=25 ℃ 8mA DC CURRENT GAIN hFE 7mA 1.50 6mA 5mA 1.25 4mA 1.00 3mA 0.75 Ta=100℃ Ta=25℃ 100 2mA 0.50 0.25 COMMON EMITTER VCE= 2V IB=1mA 0.00 10 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 7 8 1 10 (V) 100 COLLECTOR CURRENT IC VBEsat 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 VCE 100 Ta=100 ℃ 10 Ta=25℃ —— 1000 IC IC 1000 Ta=25℃ Ta=100 ℃ β=10 1 β=10 100 1 10 100 COLLECTOR CURREMT IC 3000 —— 1000 IC 1 3000 10 100 COLLECTOR CURREMT (mA) Cob/Cib VBE —— 1000 IC 3000 (mA) VCB/VEB 500 f=1MHz IE=0/IC=0 1000 T= a 25 ℃ 100 CAPACITANCE C (pF) Ta=25 ℃ T= a 10 0℃ COLLECTOR CURRENT IC (mA) 3000 (mA) 10 Cib 100 Cob COMMON EMITTER VCE= 2V 1 0 300 600 900 BASE-EMMITER VOLTAGE PC COLLECTOR POWER DISSIPATION PC (mW) 600 —— 1200 10 0.1 1 REVERSE VOLTAGE VBE (mV) 10 V 20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 125 150 (℃ ) E-mail:[email protected] 2/ 4 HED882 (NPN) GENERAL PURPOSE TRANSISTOR SOT-89 Package Outline Dimensions Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF. 0.061REF. E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP. 0.060TYP. e1 3.000TYP. 0.118TYP. L 0.900 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 1.200 0.035 E-mail:[email protected] 0.047 3/ 4 HED882 (NPN) GENERAL PURPOSE TRANSISTOR SOT-89 Tape and Reel DIMENSIONSAREINMILLIMETER TYPE A B C SOT-89 4.85 4.45 1.85 TOLERANCE ±0.1 ±0.1 ±0.1 d 1.50 ±0.1 E F P0 P P1 W 1.75 5.50 4.00 8.00 2.00 12.00 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-89 Tape Leader and Trailer Leader Tape Components Empty pockets Empty pockets SOT-89 Reel DIMNSIONSAREINMILLIMETERE REELOPTION D 7’’ DIA 180 TOLERANCE ±2 D1 60.00 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD D2 R32.00 ±1 G R86.50 ±1 H R30.00 ±1 I 13.00 ±1 E-mail:[email protected] W1 W2 13.20 16.50 ±1 ±1 4/ 4