BAS70LT1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com Features • Pb−Free Package is Available • Extremely Fast Switching Speed • Low Forward Voltage 70 VOLTS SCHOTTKY BARRIER DIODES 3 CATHODE 3 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 70 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C −55 to +150 °C Rating Operating Junction and Storage Temperature Range TJ, Tstg 1 ANODE SOT−23 CASE 318 STYLE 8 1 2 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BE M BE M Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† BAS70LT1 SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel BAS70LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 4 1 Publication Order Number: BAS70LT1/D BAS70LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage − (IR = 10 A) V(BR)R 70 − V Total Capacitance − (VR = 0 V, f = 1.0 MHz) CT − 2.0 pF Reverse Leakage (VR = 50 V) (VR = 70 V) IR − − 0.1 10 Forward Voltage − (IF = 1.0 mAdc) VF − 410 mVdc Forward Voltage − (IF = 10 mAdc) VF − 750 mVdc Forward Voltage − (IF = 15 mAdc) VF − 1.0 Vdc IR , REVERSE CURRENT (µA) 100 10 1.0 150°C 125 °C 0.1 0 0.1 0.3 0.4 0.5 125°C 1.0 85°C 0.1 25°C −55 °C 0.2 TA = 150°C 10 0.01 −40 °C 85°C 25°C 0.6 0.7 0.8 0.9 0.001 1.0 0 5.0 25 30 35 15 20 VR, REVERSE VOLTAGE (VOLTS) 10 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 40 45 Figure 2. Reverse Current versus Reverse Voltage 1.4 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 Adc 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 45 50 50 BAS70LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 BAS70LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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