ON BAS70LT1G Schottky barrier diode Datasheet

BAS70LT1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
• Pb−Free Package is Available
• Extremely Fast Switching Speed
• Low Forward Voltage
70 VOLTS SCHOTTKY
BARRIER DIODES
3
CATHODE
3
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
−55 to +150
°C
Rating
Operating Junction and Storage
Temperature Range
TJ, Tstg
1
ANODE
SOT−23
CASE 318
STYLE 8
1
2
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
BE M
BE
M
Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS70LT1
SOT−23
3000 / Tape & Reel
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS70LT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 4
1
Publication Order Number:
BAS70LT1/D
BAS70LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage − (IR = 10 A)
V(BR)R
70
−
V
Total Capacitance − (VR = 0 V, f = 1.0 MHz)
CT
−
2.0
pF
Reverse Leakage
(VR = 50 V)
(VR = 70 V)
IR
−
−
0.1
10
Forward Voltage − (IF = 1.0 mAdc)
VF
−
410
mVdc
Forward Voltage − (IF = 10 mAdc)
VF
−
750
mVdc
Forward Voltage − (IF = 15 mAdc)
VF
−
1.0
Vdc
IR , REVERSE CURRENT (µA)
100
10
1.0
150°C
125 °C
0.1
0
0.1
0.3
0.4
0.5
125°C
1.0
85°C
0.1
25°C
−55 °C
0.2
TA = 150°C
10
0.01
−40 °C
85°C
25°C
0.6
0.7
0.8
0.9
0.001
1.0
0
5.0
25
30
35
15
20
VR, REVERSE VOLTAGE (VOLTS)
10
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5.0
10
40
45
Figure 2. Reverse Current versus Reverse
Voltage
1.4
C T, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
Adc
15
20
25
30
35
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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2
45
50
50
BAS70LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW
STANDARD 318−08.
L
3
1
V
B S
2
G
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
J
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013 0.100
0.085 0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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3
BAS70LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAS70LT1/D
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