Micronas HAL560SF-E Two-wire hall effect sensor family Datasheet

MICRONAS
Edition Aug. 3, 2000
6251-425-2DS
HAL556, HAL560,
HAL566
Two-Wire Hall Effect
Sensor Family
MICRONAS
HAL55x, HAL56x
Contents
Page
Section
Title
3
3
3
4
4
4
4
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
Introduction
Features
Family Overview
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability
5
2.
Functional Description
6
6
6
6
7
7
8
9
3.
3.1.
3.2.
3.3.
3.4.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Recommended Operating Conditions
Electrical Characteristics
Magnetic Characteristics Overview
12
12
14
16
4.
4.1.
4.2.
4.3.
Type Descriptions
HAL556
HAL560
HAL566
18
18
18
18
19
19
5.
5.1.
5.2.
5.3.
5.4.
5.5.
Application Notes
Application Circuit
Extended Operating Conditions
Start-up Behavior
Ambient Temperature
EMC and ESD
20
6.
Data Sheet History
2
Micronas
HAL55x, HAL56x
Two-Wire Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
This sensor family consists of different two-wire Hall
switches produced in CMOS technology. All sensors
change the current consumption depending on the external magnetic field and require only two wires between
sensor and evaluation circuit. The sensors of this family
differ in the magnetic switching behavior and switching
points.
The sensors include a temperature-compensated Hall
plate with active offset compensation, a comparator, and
a current source. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accordingly, the current source is switched on (high current
consumption) or off (low current consumption).
The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters
are robust against mechanical stress effects.
The sensors are designed for industrial and automotive
applications and operate with supply voltages from 4 V
to 24 V in the junction temperature range from –40 °C up
to 170 °C. All sensors are available in the SMD-package
SOT-89B and in the leaded version TO-92UA.
1.2. Family Overview
The types differ according to the mode of switching and
the magnetic switching points.
Type
Switching
Behavior
Sensitivity
see
Page
556
unipolar
very high
12
560
unipolar
inverted
low
14
566
unipolar
inverted
very high
16
Unipolar Switching Sensors:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low consumption if the magnetic field is
removed. The sensor does not respond to the magnetic
north pole on the branded side.
Unipolar Inverted Switching Sensors:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package
and turns to high consumption if the magnetic field is
removed. The sensor does not respond to the magnetic
north pole on the branded side.
1.1. Features:
– current output for two-wire applications
– junction temperature range from –40 °C up to 170 °C.
– operates from 4 V to 24 V supply voltage
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
– switching offset compensation at typically 145 kHz
– overvoltage and reverse-voltage protection
– magnetic characteristics are robust against mechanical stress effects
– constant magnetic switching points over a wide supply
voltage range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the magnetic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to DIN 40839
Micronas
3
HAL55x, HAL56x
1.3. Marking Code
1.6. Solderability
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
all packages: according to IEC68-2-58
Type
During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not
be exceeded.
Temperature Range
A
K
E
HAL556
556A
556K
556E
HAL560
560A
560K
560E
HAL566
566A
566K
566E
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40 °C and 90% relative humidity.
VDD
1
3
NC
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature TJ).
A: TJ = –40 °C to +170 °C
K: TJ = –40 °C to +140 °C
2
GND
Fig. 1–1: Pin configuration
E: TJ = –40 °C to +100 °C
Note: Due to the high power dissipation at high current
consumption, there is a difference between the ambient
temperature (TA) and junction temperature. Please refer
section 5.4. on page 19 for details.
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A, K, or E
Package: SF for SOT-89B
UA for TO-92UA
Type: 556, 560, or 566
Example: HAL556UA-E
→ Type: 556
→ Package: TO-92UA
→ Temperature Range: TJ = –40 °C to +100 °C
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
4
Micronas
HAL55x, HAL56x
2. Functional Description
The HAL 55x, HAL 56x two-wire sensors are monolithic
integrated circuits which switch in response to magnetic
fields. If a magnetic field with flux lines perpendicular to
the sensitive area is applied to the sensor, the biased
Hall plate forces a Hall voltage proportional to this field.
The Hall voltage is compared with the actual threshold
level in the comparator. The temperature-dependent
bias increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures.
If the magnetic field exceeds the threshold levels, the
current source switches to the corresponding state. In
the low current consumption state, the current source is
switched off and the current consumption is caused only
by the current through the Hall sensor. In the high current
consumption state, the current source is switched on
and the current consumption is caused by the current
through the Hall sensor and the current source. The
built-in hysteresis eliminates oscillation and provides
switching behavior of the output signal without bouncing.
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. An internal oscillator provides a twophase clock. In each phase, the current is forced through
the Hall plate in a different direction, and the Hall voltage
is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are
eliminated. The average value is compared with the
fixed switching points. Subsequently, the current consumption switches to the corresponding state. The
amount of time elapsed from crossing the magnetic
switching level to switching of the current level can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
VDD-pin together with external series resistors. Reverse
current is limited at the VDD-pin by an internal series
resistor up to –15 V. No external protection diode is
needed for reverse voltages ranging from 0 V to –15 V.
HAL55x, HAL 56x
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Comparator
Current
Source
Switch
Clock
GND
2
Fig. 2–1: HAL55x, HAL 56x block diagram
fosc
t
B
BOFF
BON
t
IDD
IDDhigh
IDDlow
t
IDD
1/fosc = 6.9 µs
t
Fig. 2–2: Timing diagram (example: HAL 56x)
Micronas
5
HAL55x, HAL56x
3. Specifications
3.1. Outline Dimensions
sensitive area
4.55
0.15
∅ 0.2
1.7
0.3
sensitive area
4.06 ±0.1
1.5
∅ 0.4
0.3
y
y
2
3.05 ±0.1
4 ±0.2
0.48
top view
1
2
3
0.55
0.4
1
2
3
0.4
0.75 ±0.2
1.15
3.1 ±0.2
2.55
min.
0.25
0.36
0.4
1.5
14.0
min.
0.42
3.0
1.27 1.27
branded side
2.54
0.06 ±0.04
branded side
SPGS0022-5-A3/2E
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
3.2. Dimensions of Sensitive Area
0.25 mm x 0.12 mm
3.3. Positions of Sensitive Areas
6
SOT-89B
TO-92UA
x
center of
the package
center of
the package
y
0.85 mm nominal
0.9 mm nominal
45°
0.8
SPGS7002-9-A/2E
Fig. 3–2:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
Note: For all package diagrams, a mechanical tolerance
of ±0.05 mm applies to all dimensions where no tolerance
is explicitly given.
The improvement of the TO-92UA package with the reduced tolerances will be introduced end of 2001.
Micronas
HAL55x, HAL56x
3.4. Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
–151) 2)
282)
V
IDDZ
Supply Current through
Protection Device
1
–502)
–2003)
502)
2003)
mA
mA
TS
Storage Temperature Range
–65
150
°C
TJ
Junction Temperature Range
–40
–40
150
1704)
°C
1) –18 V with a 100 Ω series resistor at
2) as long as T max is not exceeded
J
2) with a 220 Ω series resistance at pin
3) t < 2 ms
4) t < 1000 h
pin 1 (–16 V with a 30 Ω series resistor)
1 corresponding to test circuit 1 (see Fig. 5–3)
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
4
24
V
TA
Ambient Temperature for continuos
operation
–40
–40
851)
1252)
°C
°C
ton
Supply Time for pulsed mode
30
–
µs
1) when using the “A” type or the ”K” type and
2) when using the “A” type and V
DD ≤ 13.2 V
VDD ≤ 16 V
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage
on and off (pulse mode). Please refer to section 5.4. on page 19 for details.
Micronas
7
HAL55x, HAL56x
3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
IDDlow
Low Current Consumption
over Temperature Range
1
2
3.3
5
mA
IDDhigh
High Current Consumption
over Temperature Range
1
12
14.3
17
mA
VDDZ
Overvoltage Protection
at Supply
1
–
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
fosc
Internal Oscillator
Chopper Frequency
–
90
145
–
kHz
TJ = 25 °C
fosc
Internal Oscillator Chopper Frequency over Temperature Range
–
75
145
–
kHz
ten(O)
Enable Time of Output after
Setting of VDD
1
20
30
µs
1)
tr
Output Rise Time
1
0.4
1.6
µs
VDD = 12 V, Rs = 30 Ω
tf
Output Fall Time
1
0.4
1.6
µs
VDD = 12 V, Rs = 30 Ω
RthJSB
case
SOT-89B
Thermal Resistance Junction
to Substrate Backside
–
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
RthJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point
–
–
150
200
K/W
1)
B > BON + 2 mT or B < BOFF – 2 mT for HAL 55x,
Conditions
B > BOFF + 2 mT or B < BON – 2 mT for HAL 56x
5.0
2.0
2.0
1.0
Fig. 3–3: Recommended pad size SOT-89B
Dimensions in mm
8
Micronas
HAL55x, HAL56x
3.7. Magnetic Characteristics Overview at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Parameter
Switching Type
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
HAL 556
–40 °C
3.4
6.3
7.7
2.1
4.2
5.9
0.8
2.1
3
mT
unipolar
25 °C
3.4
6
7.4
2
3.8
5.7
0.5
1.8
2.8
mT
100 °C
3.2
5.5
7.2
1.9
3.7
5.7
0.3
1.8
2.8
mT
170 °C
2.8
5
7.6
1
3.5
6.2
0.2
1.5
3.2
mT
HAL 560
–40 °C
41
46.5
52
47
53
59
4
6.5
10
mT
unipolar
25 °C
41
46.6
52
46
52.5
58.5
3
6
9
mT
inverted
100 °C
41
45.7
52
45
41.1
57.5
2
5.4
8
mT
170 °C
38
44.2
50
42
49
55.5
2
4.8
8
mT
HAL 566
–40 °C
2.1
4
5.9
3.4
6
7.7
0.8
2
2.8
mT
unipolar
25 °C
2
3.9
5.7
3.4
5.9
7.2
0.5
2
2.7
mT
inverted
100 °C
1.85
3.8
5.7
3.25
5.6
7
0.3
1.8
2.6
mT
170 °C
1
3.4
6.3
2.2
4.8
7.6
0.2
1.4
3
mT
Note: For detailed descriptions of the individual types, see pages 12 and following.
Micronas
9
HAL55x, HAL56x
mA
25
mA
20
HAL 55x, HAL 56x
18
20
IDD
HAL 55x, HAL 56x
IDDhigh
15
IDD
16
IDDhigh
14
10
12
5
VDD = 4 V
IDDlow
0
–5
–10
8
VDD = 24 V
6
TA = 25 °C
4
IDDlow
2
TA = 170 °C
–20
–15–10 –5 0
VDD = 12 V
TA = –40 °C
TA = 100 °C
–15
10
5 10 15 20 25 30 35 V
0
–50
0
50
100
VDD
HAL 55x, HAL 56x
18
IDD
200 °C
TA
Fig. 3–4: Typical current consumption
versus supply voltage
mA
20
150
Fig. 3–6: Typical current consumption
versus ambient temperature
kHz
200
HAL 55x, HAL 56x
180
16
fosc 160
IDDhigh
14
140
12
120
TA = –40 °C
10
TA = 25 °C
TA = 100 °C
8
100
VDD = 4 V
80
VDD = 12 V
TA = 170 °C
6
IDDlow
4
40
2
0
20
0
1
2
3
4
5
6 V
VDD
Fig. 3–5: Typical current consumption
versus supply voltage
10
VDD = 24 V
60
0
–50
0
50
100
150
200 °C
TA
Fig. 3–7: Typ. internal chopper frequency
versus ambient temperature
Micronas
HAL55x, HAL56x
kHz
200
HAL 55x, HAL 56x
kHz
200
180
180
fosc 160
fosc 160
140
140
120
120
100
HAL 55x, HAL 56x
100
TA = –40 °C
TA = –40 °C
80
TA = 25 °C
TA = 100 °C
60
80
TA = 25 °C
60
TA = 100 °C
TA = 170 °C
TA = 170 °C
40
40
20
20
0
0
5
10
15
20
25
30 V
VDD
Fig. 3–8: Typ. internal chopper frequency
versus supply voltage
Micronas
0
3
4
5
6
7
8 V
VDD
Fig. 3–9: Typ. internal chopper frequency
versus supply voltage
11
HAL556
4. Type Description
Applications
4.1. HAL 556
The HAL 556 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as:
The HAL 556 is a very sensitive unipolar switching sensor (see Fig. 4–1).
– applications with large airgap or weak magnets,
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
Current consumption
In the HAL 55x, HAL 56x two-wire sensor family, the
HAL566 is a sensor with the same magnetic characteristics but with an inverted output characteristic.
IDDhigh
BHYS
IDDlow
Magnetic Features:
– switching type: unipolar
0
– very high sensitivity
BOFF
BON
B
Fig. 4–1: Definition of magnetic switching points for
the HAL 556
– typical BON: 6 mT at room temperature
– typical BOFF: 4 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
–40 °C
3.4
6.3
7.7
2.1
4.2
5.9
0.8
2.1
3
25 °C
3.4
6
7.4
2
3.8
5.7
0.5
1.8
2.8
100 °C
3.2
5.5
7.2
1.9
3.7
5.7
0.3
1.8
2.8
4.6
mT
140 °C
3
5.2
7.4
1.2
3.6
6
0.2
1.6
3
4.4
mT
170 °C
2.8
5
7.6
1
3.5
6.2
0.2
1.5
3.2
4.2
mT
5.2
2.7
4.9
mT
6.5
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Changes to the previous edition:
– upper limit for BHYS at –40 °C, 25 °C, and 100 °C; limits for BOffset at 25 °C changed
– specification for 140 °C and 170 °C added
12
Micronas
HAL556
mT
8
mT
8
HAL 556
HAL 556
BONmax
BON
BOFF
7
BON
BOFF
BON
7
BONtyp
6
6
5
5
BOFFmax
BOFF
BOFFtyp
4
4
3
3
TA = –40 °C
2
2
TA = 25 °C
BONmin
BOFFmin
TA = 100 °C
1
0
VDD = 4 V
1
TA = 170 °C
0
5
10
15
20
25
30 V
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
BON
BOFF
VDD = 24 V
0
50
100
150
200 °C
TA, TJ
VDD
mT
8
0
–50
VDD = 12 V
HAL 556
Fig. 4–4: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
7
BON
6
5
BOFF
4
3
TA = –40 °C
2
TA = 25 °C
TA = 100 °C
1
0
TA = 170 °C
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
Micronas
13
HAL560
4.2. HAL 560
Applications
The HAL 560 is a low sensitive unipolar switching sensor
with an inverted output (see Fig. 4–5).
The HAL 560 is designed for applications with one magnetic polarity and strong magnetic amplitudes at the sensor position where an inverted output signal is required
such as:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package
and turns to high current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
– applications with strong magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
– rotating speed measurement.
Magnetic Features:
Current consumption
– switching type: unipolar inverted
IDDhigh
– low sensitivity
BHYS
– typical BON: 45.6 mT at room temperature
– typical BOFF: 51.7 mT at room temperature
IDDlow
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
0
BON
BOFF
B
Fig. 4–5: Definition of magnetic switching points for
the HAL 560
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
–40 °C
41
46.5
52
47
53
59
4
6.5
10
49.8
mT
25 °C
41
46.5
52
46
52.5
58.5
3
6
9
49.5
mT
100 °C
41
45.7
52
45
51.1
57.5
2
5.4
8
48.4
mT
140 °C
39
44.8
51
43.5
49.8
56.5
2
5
8
47.3
mT
170 °C
38
44.2
50
42
49
55.5
2
4.8
8
46.6
mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Changes to the previous edition:
– tighter specification for BOFF at –40 °C, 25 °C, and 100 °C
– specification for 140 °C and 170 °C added
14
Micronas
HAL560
mT
60
HAL 560
mT
60
HAL 560
BOFFmax
BON
BOFF 55
BON
BOFF 55
BOFF
50
50
BOFFtyp
BONmax
BONtyp
BON
45
45
BOFFmin
TA = –40 °C
40
40
TA = 25 °C
BONmin
TA = 100 °C
TA = 170 °C
35
VDD = 4 V
35
VDD = 12 V
VDD = 24 V
30
0
5
10
15
20
25
30 V
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
HAL 560
BON
BOFF 55
0
50
100
150
200 °C
TA, TJ
VDD
mT
60
30
–50
Fig. 4–8: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
BOFF
50
45
BON
TA = –40 °C
40
TA = 25 °C
TA = 100 °C
TA = 170 °C
35
30
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
Micronas
15
HAL566
4.3. HAL 566
Applications
The HAL 566 is a very sensitive unipolar switching
sensor with an inverted output (see Fig. 4–9).
The HAL 566 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required
such as:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package
and turns to high current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
– rotating speed measurement.
In the HAL 55x, HAL 56x two-wire sensor family, the
HAL556 is a sensor with the same magnetic characteristics but with a normal output characteristic.
Current consumption
IDDhigh
BHYS
Magnetic Features:
– switching type: unipolar inverted
IDDlow
– high sensitivity
– typical BON: 4 mT at room temperature
0
– typical BOFF: 5.9 mT at room temperature
BON
BOFF
B
Fig. 4–9: Definition of magnetic switching points for
the HAL 566
– operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
2.1
4
5.9
3.4
6
7.7
0.8
2
2.8
2
3.9
5.7
3.4
5.9
7.2
0.5
2
2.7
100 °C
1.85
3.8
5.7
3.25
5.6
7
0.3
1.8
2.6
4.7
mT
140 °C
1.3
3.6
6
2.6
5.2
7.3
0.2
1.6
3
4.4
mT
170 °C
1
3.4
6.3
2.2
4.8
7.6
0.2
1.4
3
4.1
mT
–40 °C
25 °C
Min.
Typ.
Unit
Min.
Max.
5
3
4.9
mT
6.2
mT
The hysteresis is the difference between the switching points BHYS = BOFF – BON
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Changes to the previous edition:
– specification for 140 °C and 170 °C added
16
Micronas
HAL566
mT
8
BON
BOFF
mT
8
HAL 566
7
BON
BOFF
BOFF
6
HAL 566
BOFFmax
7
6
BONmax
5
BONtyp
BON
4
4
3
3
TA = –40 °C
2
2
TA = 25 °C
TA = 100 °C
1
0
0
5
10
15
20
BONmin
VDD = 4 V
25
30 V
0
–50
VDD = 12 V
VDD = 24 V
0
50
100
150
200 °C
TA, TJ
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
mT
8
BOFFmin
1
TA = 170 °C
VDD
BON
BOFF
BOFFtyp
5
HAL 566
Fig. 4–12: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus
temperature” the curves for BONmin, BONmax,
BOFFmin, and BOFFmax refer to junction temperature,
whereas typical curves refer to ambient temperature.
7
BOFF
6
5
4
BON
3
TA = –40 °C
2
TA = 25 °C
TA = 100 °C
1
0
TA = 170 °C
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
Micronas
17
HAL55x, HAL56x
5. Application Notes
5.2. Extended Operating Conditions
5.1. Application Circuit
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating
Conditions (see page 7).
Figure 5–1 shows a simple application with a two-wire
sensor. The current consumption can be detected by
measuring the voltage over RL. For correct functioning
of the sensor, the voltage between pin 1 and 2 (VDD)
must be a minimum of 4 V. With the maximum current
consumption of 17 mA, the maximum RL can be calculated as:
Typically, the sensors operate with supply voltages
above 3 V. However, below 4 V, the current consumption
and the magnetic characteristics may be outside the
specification.
Note: The functionality of the sensor below 4 V is not
tested on a regular base. For special test conditions,
please contact Micronas.
* 4V
V
R Lmax + SUPmin
17 mA
1 VDD
VSUP
5.3. Start-up Behavior
VSIG
RL
2 GND
Fig. 5–1: Application Circuit 1
Due to the active offset compensation, the sensors have
an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
the Electrical Characteristics (see page 8). During the
initialization time, the current consumption is not defined
and can toggle between low and high.
HAL556:
For applications with disturbances on the supply line or
radiated disturbances, a series resistor RV (ranging from
10 Ω to 30 Ω) and a capacitor both placed close to the
sensor are recommended (see figure 5–2). In this case,
the maximum RL can be calculated as:
HAL560, HAL 566:
* 4V
V
R Lmax + SUPmin
* RV
17 mA
1 VDD
VSUP
After ten(O), the current consumption will be high if the
applied magnetic field B is above BON. The current consumption will be low if B is below BOFF.
RV
VSIG
4.7 nF
RL
2 GND
In case of sensors with an inverted switching behavior,
the current consumption will be low if B > BOFF and high
if B < BON.
Note: For magnetic fields between BOFF and BON, the
current consumption of the HAL sensor will be either low
or high after applying VDD. In order to achieve a defined
current consumption, the applied magnetic field must be
above BON, respectively, below BOFF.
Fig. 5–2: Application Circuit 2
18
Micronas
HAL55x, HAL56x
5.4. Ambient Temperature
5.5. EMC and ESD
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature TJ) is higher than
the temperature outside the package (ambient temperature TA).
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–2). The series resistor
and the capacitor should be placed as closely as possible to the HAL sensor.
TJ = TA + ∆T
At static conditions and continuous operation, the following equation is valid:
∆T = IDD * VDD * Rth
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax – ∆T
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
Due to the range of IDDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (ton) ranging from 30 µs
to 1 ms, the following equation can be used:
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
Note: The international standard ISO 7637 is similar to
the product standard DIN 40839.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV1
100 Ω
RV2
30 Ω
1 VDD
VEMC
NC
4.7 nF
2
GND
t on
DT + I DD * V DD * R th *
t off ) t on
Fig. 5–3: Recommended EMC test circuit
Micronas
19
HAL55x, HAL56x
6. Data Sheet History
1. Final data sheet: “HAL 556, HAL 560, HAL 566, TwoWire Hall Effect Sensor Family, April 6, 1999,
6251-425-1DS. First release of the final data sheet.
2 Final data sheet: “HAL 556, HAL 560, HAL 566, TwoWire Hall Effect Sensor Family, Aug. 3, 2000,
6251-425-2DS. Second release of the final data
sheet. Major changes:
– magnetic characteristics for HAL 556 and HAL 560
changed. Please refer to pages 12 and 14 for details.
– new temperature ranges “K” and “A” added
– temperature range “C” removed
– outline dimensions for SOT-89B: reduced tolerances
– SMD package SOT-89A removed
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: [email protected]
Internet: www.micronas.com
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (08/2000)
Order No. 6251-425-2DS
20
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on
a retrieval system, or transmitted without the express written consent
of Micronas GmbH.
Micronas
HAL 11x, HAL 5xx, HAL 62x
Data Sheet Supplement
Subject:
Improvement of SOT-89B Package
Data Sheet Concerned:
HAL 114, 115, 6251-456-2DS, Dec. 20, 1999
HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999
HAL 55x, 56x, 6251-425-1DS, April 6, 1999
HAL 621, 629, 6251-504-1DS, Feb. 3, 2000
Supplement:
No. 1/ 6251-531-1DSS
Edition:
July 4, 2000
Changes:
– position tolerance of the sensitive area reduced
– tolerances of the outline dimensions reduced
– thickness of the leadframe changed to 0.15 mm (old 0.125 mm)
– SOT-89A will be discontinued in December 2000
sensitive area
4.55
0.15
∅ 0.2
1.7
0.3
y
2
4 ±0.2
2.55
min.
0.25
top view
1
1.15
2
3
0.4
0.4
0.4
1.5
3.0
branded side
0.06 ±0.04
SPGS0022-5-A3/2E
Position of sensitive area
HAL 114, 115
HAL 50x, 51x
HAL 621, 629
HAL 55x, HAL 56x
x
center of the package
center of the package
y
0.95 mm nominal
0.85 mm nominal
Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given.
Position tolerance of the sensitive area is defined in the package diagram.
Micronas
page 1 of 1