DMP3010LPSQ Green Product Summary P-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Features ID TA = +25°C -36A -31A • • • Thermally Efficient Package - Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses performance. This device is ideal for use in notebook battery power management and load switch. • • • • • • • • Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications ESD HBM Protected up to 1kV Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Available Applications Mechanical Data V(BR)DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V Description This new generation 30V P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching • • • Notebook Battery Power Management DC-DC Converters Load Switch • Case: POWERDI®5060-8 • Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.097 grams (Approximate) • • • D POWERDI5060-8 Pin1 G S Top View Top View Pin Configuration Bottom View Internal Schematic Ordering Information (Notes 4 & 5) Part Number DMP3010LPSQ-13 Notes: Qualification Automotive Case POWERDI®5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information POWERDI5060-8 D D D D = Manufacturer’s Marking P3010LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) P3010LS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMP3010LPSQ Document number: DS36683 Rev. 4 - 2 1 of 7 www.diodes.com February 2015 © Diodes Incorporated DMP3010LPSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State Continuous Drain Current (Note 7) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value -30 ±20 -36 -29 ID -31 -25 Unit V V A A IDM IAR EAR -14.5 -11.5 -100 -17.5 153 A A mJ Symbol PD RθJA PD RθJA PD RθJC TJ, TSTG Value 2.18 55 14.37 8.7 58.7 2.13 -55 to +150 Unit W °C/W W °C/W W °C/W °C ID Pulsed Drain Current (Notes 6 & 9) Avalanche Current (Notes 10 & 11) Repetitive Avalanche Energy (Notes 10 & 11) L = 1mH A Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) Power Dissipation (Notes 7 & 8) Thermal Resistance, Junction to Case @TC = +25°C (Notes 7 & 8) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 11) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 11) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) -1.6 5.7 7.2 30 -0.65 -2.1 7.5 10 — -1 V Static Drain-Source On-Resistance -1.1 — — — — VDS = VGS, ID = -250µA VGS = -10V, ID = -10A VGS = -4.5V, ID = -10A VDS = -15V, ID = -10A VGS = 0V, IS = -1A — — — — — — — — — — — — 6,234 1,500 774 1.28 126.2 59.2 16.1 15.7 11.4 9.4 260.7 99.3 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 15V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -10A VDS = -15V, VGS = -4.5V, ID = -10A VDS = -15V, VGEN = -10V, RG = 6Ω, ID = -1A 6. Device mounted on FR-4 PCB with 1-inch square 2 oz. Copper, single sided. 7. Device mounted on FR-4 PCB with infinite heatsink. 8. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 9. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%. 10. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 11. Short duration pulse test used to minimize self-heating effect. 12. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. DMP3010LPSQ Document number: DS36683 Rev. 4 - 2 2 of 7 www.diodes.com February 2015 © Diodes Incorporated DMP3010LPSQ 30 30 VGS = -10V 25 VGS = -4.5V VGS = -5.0V 20 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -3.5V VGS = -3.0V VGS = -2.5V 15 10 5 VDS = -5V 20 15 10 TA = 150°C TA = 125°C 5 TA = 85°C T A = 25°C VGS = -2.0V 0 0.5 1 1.5 2 2.5 3 3.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 4 0.020 0.016 0.012 0.008 VGS = -4.5V VGS = -10V 0.004 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 0.016 0.014 VGS = -4.5V 0.012 TA = 150°C 0.010 TA = 125°C 0.008 TA = 85°C TA = 25°C 0.006 TA = -55°C 0.004 0.002 0 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.020 1.6 1.4 1.2 1.0 TA = -55°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 VGS = -10V ID = -20A 0.8 VGS = -4.5V ID = -10A 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 0.016 0.012 VGS = -4.5V ID = -10A 0.008 0.004 VGS = -10V ID = -20A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMP3010LPSQ Document number: DS36683 Rev. 4 - 2 3 of 7 www.diodes.com February 2015 © Diodes Incorporated DMP3010LPSQ 30 25 2.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 ID = -1mA 1.5 ID = -250µA 1.0 0.5 T A = 25°C 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 100,000 Ciss -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 20 Coss 1,000 Crss 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 f = 1MHz 100 1 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 VDS = -15V ID = -10A -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) 100 6 4 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 20 30 RDS(on) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms 0.1 TJ(max) = 150°C PW = 10ms TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 2 0 0 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 10 8 TA = 25°C 40 60 80 100 120 140 Qg , TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge 0.01 0.1 PW = 1ms 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMP3010LPSQ Document number: DS36683 Rev. 4 - 2 4 of 7 www.diodes.com February 2015 © Diodes Incorporated DMP3010LPSQ R(T), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 97°C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI®5060-8 D D1 Detail A 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) 1 L A e/2 D3 D2 E3 E2 M1 Detail A G b2 (4X) K M b3 (4X) L1 POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm POWERDI is a registered trademark of Diodes Incorporated. DMP3010LPSQ Document number: DS36683 Rev. 4 - 2 5 of 7 www.diodes.com February 2015 © Diodes Incorporated DMP3010LPSQ Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X4 Y2 X3 Y3 Y5 Y7 Y1 Y4 Y6 X1 X2 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 POWERDI is a registered trademark of Diodes Incorporated. DMP3010LPSQ Document number: DS36683 Rev. 4 - 2 6 of 7 www.diodes.com February 2015 © Diodes Incorporated DMP3010LPSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMP3010LPSQ Document number: DS36683 Rev. 4 - 2 7 of 7 www.diodes.com February 2015 © Diodes Incorporated