AP4511GM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance RDS(ON) D1 D1 ▼ Fast Switching Performance 35V 25mΩ ID G2 S2 SO-8 G1 7A P-CH BVDSS S1 Description -35V RDS(ON) 40mΩ ID -6.1A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D2 D1 The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G2 G1 S2 S1 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 35 -35 V ±20 ±20 V Continuous Drain Current 3 7 -6.1 A Continuous Drain Current 3 5.7 -5 A 30 -30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 ℃/W 201122041 AP4511GM o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 35 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=7A - 18 25 mΩ VGS=4.5V, ID=5A - 29 37 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=7A - 9 - S Drain-Source Leakage Current (Tj=25 C) VDS=35V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=28V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=7A - 11 18 nC VGS( h) Gate Threshold Voltage gfs Forward Transconductance o IDSS IGSS 2 VGS=0V, ID=250uA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=28V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC 2 td(on) Turn-on Delay Time VDS=18V - 12 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=18Ω - 6 - ns Ciss Input Capacitance VGS=0V - 830 1330 pF Coss Output Capacitance VDS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=7A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC AP4511GM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -35 - - V - -0.02 - V/℃ VGS=-10V, ID=-6A - 32 40 mΩ VGS=-4.5V, ID=-4A - 50 60 mΩ VDS=VGS, ID=-250uA -1 - -3 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) 2 Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS VGS=0V, ID=-250uA Max. Units VDS=-10V, ID=-6A - 9 - S o VDS=-35V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-28V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±20V - - ±100 nA Drain-Source Leakage Current (Tj=25 C) 2 Qg Total Gate Charge ID=-6A - 10 16 nC Qgs Gate-Source Charge VDS=-28V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC VDS=-18V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns tf Fall Time RD=18Ω - 7 - ns Ciss Input Capacitance VGS=0V - 690 1100 pF Coss Output Capacitance VDS=-25V - 165 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 5.2 7.8 Ω Min. Typ. IS=-1.7A, VGS=0V - - -1.2 V IS=-6A, VGS=0V - 20 - ns dI/dt=-100A/µs - 12 - nC Source-Drain Diode Symbol VSD Parameter Test Conditions 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. AP4511GM N-Channel 50 50 T A = 25 o C 10V 7.0V 5.0V 40 ID , Drain Current (A) ID , Drain Current (A) 40 30 4.5V 20 V G =3.0V 10 5.0V 30 4 5V 20 V G =3.0V 10 0 0 0 1 2 3 4 0 5 1 V DS , Drain-to-Source Voltage (V) 2 3 4 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 1.8 ID=5A ID=7A V G =10V 1.6 T A =25 o C Normalized RDS(ON) 35 RDS(ON) (mΩ ) 10V 7.0V T A = 150 o C 30 1.4 1.2 1.0 25 0.8 0.6 20 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 6 1.5 5 Normalized VGS(th) (V) 1.3 IS(A) 4 T j =150 o C T j =25 o C 3 2 1.1 0.9 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP4511GM N-Channel f=1.0MHz 1000 C iss I D =7A V DS =28V 12 10 C oss 8 C (pF) VGS , Gate to Source Voltage (V) 14 6 C rss 100 4 2 10 0 0 5 10 15 20 1 25 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 Normalized Thermal Response (Rthja) 100 ID (A) 13 V DS , Drain-to-Source Voltage (V) 10us 1ms 1 10ms 100ms o 0.1 T A =25 C Single Pulse 1s Duty factor=0 5 0.2 0.1 0.1 0 05 0.02 0.01 PDM t 0.01 Single Pulse T Duty factor t/T Peak Tj PDM x Rthja Ta Rthja 135o C/W DC 0.01 0.001 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C T j =150 o C QG 20 4.5V QGS QGD 10 Charge 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q AP4511GM P-Channel 50 50 -10V -7.0V o T A = 25 C 40 -5.0V -4.5V 30 20 V G = - 3.0V 10 -ID , Drain Current (A) 40 -ID , Drain Current (A) -10V -7.0V T A = 150 o C -5.0V 30 -4.5V 20 V G = - 3.0V 10 0 0 0 1 2 3 4 0 5 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.4 60 I D = -4 A 55 I D =-6A V G =-10V T A =25 o C Normalized R DS(ON) RDS(ON) (m Ω) 1.2 50 45 40 1.0 0.8 35 0.6 30 3 5 7 9 -50 11 50 100 150 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 Normalized -VGS(th) (V) 5 4 -IS(A) 0 o -V GS ,Gate-to-Source Voltage (V) T j =150 o C 3 T j =25 o C 2 1.3 1.1 0.9 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP4511GM P-Channel 14 I D = -6 A V DS = - 28V 12 10 C (pF) -VGS , Gate to Source Voltage (V) f=1.0MHz 10000 8 C iss 1000 6 4 C oss 2 C rss 0 100 0 5 10 15 20 25 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 100us 10 1ms -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 10ms 1 100ms 1s o 0.1 T c =25 C Single Pulse DC Duty factor=0 5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor t/T Peak Tj PDM x Rthja Ta R hja 135oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG -ID , Drain Current (A) V DS =-5V T j =25 o C T j =150 o C QG 20 -4.5V QGS QGD 10 Charge 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q