ON NTF2955 Power mosfet â 60 v, â 2.6 a, single pâ channel sotâ 223 Datasheet

NTF2955, NVF2955,
NVF2955P
Power MOSFET
−60 V, −2.6 A, Single P−Channel SOT−223
Features
•
•
•
•
Design for low RDS(on)
Withstands High Energy in Avalanche and Commutation Modes
AEC−Q101 Qualified − NVF2955, NVF2955P
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) TYP
ID MAX
−60 V
145 mW @ −10 V
−2.6 A
Applications
•
•
•
•
P−Channel
Power Supplies
PWM Motor Control
Converters
Power Management
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
±20
V
ID
−2.6
A
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
2.3
W
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
ID
−1.7
A
Power Dissipation
(Note 2)
TA = 85°C
−1.3
PD
1.0
W
IDM
−17
A
TJ,
TSTG
−55 to
175
°C
EAS
225
mJ
TL
260
°C
Parameter
Symbol
Max
Unit
Junction−to−Tab (Drain) − Steady State (Note 2)
RqJC
14
Junction−to−Ambient − Steady State (Note 1)
RqJA
65
Junction−to−Ambient − Steady State (Note 2)
RqJA
150
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
THERMAL RESISTANCE RATINGS
May, 2013 − Rev. 6
4 Drain
AYW
2955G
G
4
12
3
1
Gate
SOT−223
CASE 318E
STYLE 3
2
Drain
4 Drain
3
Source
AYW
2955PG
G
1
Gate
2
Drain
3
Source
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127
in2 [1 oz] including traces)
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu. area = 0.341 in2)
© Semiconductor Components Industries, LLC, 2013
MARKING DIAGRAMS AND
PIN ASSIGNMENT
−2.0
TA = 85°C
TA = 25°C
S
1
Package
Shipping†
NTF2955T1G
SOT−223
(Pb−Free)
1000 /Tape & Reel
NVF2955T1G
SOT−223
(Pb−Free)
1000/ Tape & Reel
NVF2955PT1G
SOT−223
(Pb−Free)
1000/ Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTF2955/D
NTF2955, NVF2955, NVF2955P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Symbol
Parameter
Test Condition
Min
VGS = 0 V, ID = −250 mA
−60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
66.4
VGS = 0 V,
VDS = −60 V
mV/°C
TJ = 25°C
−1.0
TJ = 125°C
−50
IGSS
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −1.0 mA
Drain−to−Source On Resistance
RDS(on)
VGS = −10 V, ID = −0.75 A
VGS = −10 V, ID = −1.5 A
mA
±100
nA
−4.0
V
145
170
mW
150
180
185
ON CHARACTERISTICS (Note 3)
−2.0
VGS = −10 V, ID = −2.4 A
154
gFS
VGS = −15 V, ID = −0.75 A
1.77
S
Input Capacitance
CISS
492
pF
Output Capacitance
COSS
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
Reverse Transfer Capacitance
CRSS
Forward Transconductance
CHARGES AND CAPACITANCES
165
50
VGS = 10 V, VDS = 30 V,
ID = 1.5 A
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
2.3
Gate−to−Drain Charge
QGD
5.2
nC
14.3
1.2
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = 10 V, VDD = 25 V,
ID = 1.5 A, RG = 9.1 W
RL = 25 W
ns
11
7.6
td(OFF)
65
tf
38
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
−1.10
TJ = 125°C
−0.9
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 1.5 A
−1.30
V
36
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 1.5 A
QRR
20
16
0.139
3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTF2955, NVF2955, NVF2955P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
VGS = −6 V
VGS = −10 V to −7 V
8
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
10
TJ = 25 °C
VGS = −5.5 V
6
VGS = −5 V
4
VGS = −4.5 V
2
VGS = −3.8 V
0
0
1
2
3
4
5
6
7
8
9
TJ = −55°C
TJ = 25°C
8
4
2
2
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
0.2
0.175
TJ = 25°C
VGS = −10 V
0.15
VGS = −15 V
0.125
TJ = −55°C
0.1
0.075
0
2
0
2
1.8
1.6
4
8
6
10
0.05
0
2
6
4
8
10
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
ID = −1.5 A
VGS = −10 V
VGS = 0 V
TJ = 150°C
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = 125°C
0.1
10
0.25
0.225
0.2
8
Figure 2. Transfer Characteristics
VGS = −10 V
0.3
6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.4
TJ = 125°C
6
0
10
VDS ≥ 10 V
1.4
1.2
1
0.8
0.6
0.4
100
TJ = 125°C
0.2
0
−50
−25
0
25
50
75
100
125
10
150
5
10
15
20
25
30
35
40
45
50
55
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
60
NTF2955, NVF2955, NVF2955P
Ciss
C, CAPACITANCE (pF)
1000
800
QT
10
Crss
600
Ciss
400
Coss
200
Crss
0
10
60
12
TJ = 25°C
VGS = 0 V
VDS = 0 V
5
−VGS
0
−VDS
5
10
15
20
25
8
QGS
30
20
4
VDS
2
0
0
2
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
td(off)
tf
td(on)
10
tr
1
−ID, DRAIN CURRENT (AMPS)
100
10
10
2
1
0
0.25
0.75
0.5
1
1.25
1.5
1.75
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
VGS = −20 V
SINGLE PULSE
TC = 25°C
10 ms
10 ms
1
dc
0.01
0.1
3
RG, GATE RESISTANCE (W)
100 ms
1 ms
0.1
0
16
14
VGS = 0 V
TJ = 25°C
4
0
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
5
100
10
ID = −1.5 A
TJ = 25°C
Figure 7. Capacitance Variation
VDD = −25 V
ID = −1.5 A
VGS = −10 V
40
VGS
QGD
6
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
50
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1200
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
250
IPK = −6.7 A
200
150
100
50
0
25
50
75
100
125
150
175
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTF2955, NVF2955, NVF2955P
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
q
L
STYLE 3:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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