LRC LRB520BS-40T5G Schottky barrier diode Datasheet

LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
zApplictions
LRB520BS-40T5G
Low current rectification and high speed switching
zFeatures
Extremelysmall surface mounting type. (SOD882)
1
High reliability
Low I R .
z Construction
2
Silicon epitaxial planar
SOD882
z We declare that the material of product
compliance with RoHS requirements.
Ordering Information
1
Cathode
Device
Marking
Shipping
LRB520BS-40T5G
D1
10000/Tape&Reel
2
Anode
MAXIMUM RATINGS (TA = 25°C)
Symbol
Limits
Unit
Reverse voltage(repetitive peak)
Parameter
VR
DC reverse voltage
Average rectified forward current
VR
IO
40
40
200
V
V
mA
Peak forward surge current
I FSM
1
A
Junction temperature
Tj
Storage temperature
Tstg
125
-40~+125
°C
°C
ELECTRICAL CHARACTERISTICS(TA = 25°C)
Parameter
Forward voltage
Symbol
VF
Min.
-
Max.
0.39
V
Unit
Conditions
I F=10mA
Forward voltage
VF
-
0.55
V
I F=100mA
Reverse current
IR
-
1
µΑ
VR=10V
Reverse current
IR
-
10
µΑ
VR=40V
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LRB520BS-40T5G
zElectrical characteristic curves
1000
1000
Ta=75℃
10
Ta=25℃
1
Ta=-25℃
0.1
0.01
f=1MHz
Ta=75℃
10
1
Ta=25℃
0.1
Ta=-25℃
0.01
0.001
0.001
100
200
300
400
500
600
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
40
480
AVE:491.2mV
470
800
600
500
400
AVE:67.0nA
200
30
25
20
15
AVE:23.2pF
10
5
0
0
Ct DISPERSION MAP
15
8.3ms
15
AVE:5.60A
5
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
Ifsm
10
35
100
10
20
40
IR DISPERSION MAP
30
Ifsm
8.3ms 8.3ms
1cyc
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISPERSION MAP
0.3
Mounted on epoxy board
IM=1mA
IF=200mA
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
45
700
300
20
50
Ta=25℃
VR=10V
n=30pcs
VF DISPERSION MAP
25
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
490
10000
30
900
460
Ifsm
t
10
5
0
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0.01
1ms
time
Rth(j-a)
300us
Rth(j-c)
100
FORWARD POWER
DISSIPATION:Pf(W)
0.008
1000
D=1/2
REVERSE POWER
DISSIPATION:PR (W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
20
1000
Ta=25℃
IF=100mA
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
10
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
510
500
10
1
0.0001
0
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
100
Ta=125℃
100
REVERSE CURRENT:IR(μA)
FORWARD CURRENT:IF(mA)
Ta=125℃
0.2
Sin(θ=180)
DC
0.1
DC
0.006
D=1/2
0.004
Sin(θ=180)
0.002
10
0.001
0
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
0
0.1
0.2
0.3
0.4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.5
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LRB520BS-40T5G
0.5
0.4
t
DC
T
0.3
VR
D=t/T
VR=20V
Tj=125℃
D=1/2
0.2
0.1
Sin(θ=180)
0
Io
0A
0V
Io
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
0.5
t
0.4
DC
T
VR
D=t/T
VR=20V
Tj=125℃
0.3
D=1/2
0.2
0.1
Sin(θ=180)
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve (Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Tc)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LRB520BS-40T5G
SOD882
DIMENSION OUTLINE:
Unit:mm
Rev.O 4/4
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