Weitron MJE3055 Plastic-encapsulate power transistor Datasheet

MJE3055
Plastic-Encapsulate Power Transistors
1
1. BASE
2
3
2. COLLECTOR
TO-220
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current (DC)
Total Device Disspation TC=25 C
Derate above 25 C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IC(DC)
Value
60
70
5.0
10
Unit
Vdc
Vdc
Vdc
Adc
PD
75
0.6
W
W/ C
Tj , Tstg
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= 200 mAdc, IB=0)
V(BR)CEO
60
-
Vdc
Collector-Base Breakdown Voltage (IC= 1.0 mAdc, IE=0)
V(BR)CBO
70
-
Vdc
Emitter-Base Breakdown Voltage (IE= 1.0 mAdc, IC=0)
V(BR)EBO
5.0
-
Vdc
Collector Cutoff Current (VCB= 70 Vdc, IE=0)
ICBO
-
1.0
nAdc
Emitter Cutoff Current (VEB= 5.0Vdc, IC =0)
IEBO
-
5.0
nAdc
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MJE3055
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
hFE (1)
Unit
ON CHARACTERISTICS
DC Current Gain (1)
(IC= 4 Adc, VCE= 4 Vdc)
(IC= 10 Adc, VCE= 4 Vdc)
20
-
100
hFE (2)
5
-
-
Collector-Emitter Saturation Voltage (1)
(IC= 4 Adc, IB= 400 mAdc)
(IC= 10 Adc, IB= 3.3 Adc)
VCE(sat)
-
-
1.1
-
8
Base-Emitter On Voltage (1)
(IC= 4 Adc, VCE = 4 Vdc)
VBE(ON)
-
-
1.8
Vdc
fT
-
2
-
MHz
Current-Gain-Bandwidth Product
(IC= 500 mAdc, VCE=10 Vdc)
Note:
_ 300us, Duty Cycle <
_ 2.0%
1. Pulse Test: PW <
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-
Vdc
MJE3055
TO-220 Outline Dimensions
unit:mm
TO-220
A
D
C1
Φ
F
H
E1
E
B1
L1
A1
B
G
G1
C
Dim
A
A1
B
B1
C
C1
D
E
E1
G
G1
F
H
L
L1
Φ
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Min
Max
4.67
4.47
2.82
2.52
0.91
0.71
1.37
1.17
0.53
0.31
1.37
1.17
10.31
10.01
8.90
8.50
12.06
12.446
2.54 TYP
4.98
5.18
2.89
2.59
0.30
0.00
13.4
13.8
3.96
3.56
3.93
3.73
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