NTD5867NL N-Channel Power MOSFET 60 V, 20 A, 39 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS 60 V Gate−to−Source Voltage − Continuous VGS "20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) VGS "30 V ID 20 A Power Dissipation (RqJC) TC = 25°C Steady State Pulsed Drain Current TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 13 PD 36 W IDM 76 A TJ, Tstg −55 to 150 °C IS 20 A EAS 18 mJ TL 260 ID MAX 39 mW @ 10 V 20 A 50 mW @ 4.5 V 18 A D G S N−CHANNEL MOSFET 4 4 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) RqJC 3.5 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 45 1 2 3 DPAK CASE 369AA (Surface Mount) STYLE 2 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. 1 2 3 IPAK CASE 369D (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 67NLG Parameter RDS(on) MAX V(BR)DSS 60 V Drain−to−Source Voltage Continuous Drain Current (RqJC) http://onsemi.com 2 1 Drain 3 Gate Source 4 Drain YWW 58 67NLG • • • • 1 2 3 Gate Drain Source Y = Year WW = Work Week 5867NL = Device Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 0 1 Publication Order Number: NTD5867NL/D NTD5867NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 60 VGS = 0 V, VDS = 100 V mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 1.5 1.8 5.2 mV/°C mW VGS = 10 V, ID = 10 A 26 39 VGS = 4.5 V, ID = 10 A 33 50 VDS = 15 V, ID = 10 A 8.0 S 675 pF CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 68 47 Total Gate Charge QG(TOT) 15 Threshold Gate Charge QG(TH) 1.0 Gate−to−Source Charge QGS Gate−to−Drain Charge Total Gate Charge Gate Resistance VGS = 10 V, VDS = 48 V, ID = 20 A QGD nC 2.2 4.3 QG(TOT) VGS = 4.5 V, VDS = 48 V, ID = 20 A 7.6 nC RG 1.3 W td(on) 6.5 ns SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time tr Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 48 V, ID = 20 A, RG = 2.5 W tf 12.6 18.2 2.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.87 TJ = 100°C 0.78 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.2 17 VGS = 0 V, dIs/dt = 100 A/ms, IS = 20 A QRR V ns 13 4.0 12 nC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Package Shipping† NTD5867NL−1G IPAK (Straight Lead) (Pb−Free) 75 Units / Rail NTD5867NLT4G DPAK (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD5867NL TYPICAL PERFORMANCE CURVES 40 ID, DRAIN CURRENT (AMPS) 3.8 V 25 3.6 V 20 3.4 V 15 3.2 V 10 3.0 V 5 2.8 V 0 1 2 3 4 20 15 TJ = 125°C 10 TJ = 25°C 5 TJ = −55°C 2 3 4 5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.050 0.040 0.030 5 4 7 6 8 9 10 0.040 TJ = 25°C 0.035 VGS = 4.5 V 0.030 VGS = 10 V 0.025 0.020 5 10 15 20 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.2 2.0 25 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID = 20 A TJ = 25°C 3 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.060 0.020 VDS ≥ 10 V 35 0 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 4V 30 10000 VGS = 0 V ID = 20 A VGS = 10 V 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 40 TJ = 25°C 35 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 4.5 V 10V 1.6 1.4 1.2 1.0 TJ = 150°C 1000 100 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Drain Voltage http://onsemi.com 3 60 NTD5867NL 1000 VGS = 0 V 900 C, CAPACITANCE (pF) VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES TJ = 25°C 800 Ciss 700 600 500 400 300 200 Coss 100 0 0 Crss 10 20 30 40 50 60 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 QT 8 VGS 6 Qgs 4 2 VDS = 48 V ID = 20 A TJ = 25°C 0 0 5 tf IS, SOURCE CURRENT (AMPS) t, TIME (ns) 20 100 td(off) tr 10 td(on) 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 15 10 5 0 0.5 100 100 ms 1 ms 0.1 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) I D, DRAIN CURRENT (AMPS) 10 ms VGS = 10 V SINGLE PULSE TC = 25°C 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current 100 10 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1 15 Figure 8. Gate−To−Source Voltage vs. Total Charge VDD = 48 V ID = 20 A VGS = 10 V 1 1 10 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 Qgd 20 ID = 20 A 15 10 5 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTD5867NL r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL PERFORMANCE CURVES 10 1.0 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 0.01 0.000001 t1 t2 DUTY CYCLE, D = t1/t2 0.01 SINGLE PULSE 0.00001 0.0001 t, TIME (ms) 0.001 Figure 13. Thermal Response http://onsemi.com 5 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.01 0.1 NTD5867NL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE A −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F H J L R S U V Z H 3 U F J L D 2 PL 0.13 (0.005) M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD5867NL PACKAGE DIMENSIONS IPAK (STRAIGHT LEAD DPAK) CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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