Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Main Product Characteristics General Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR20200C is available in TO-220-3 (2) and TO-220F-3 packages. IF(AV) 2×10A VRRM 200V TJ 150°C VF(max) 0.9V TO-220-3, Mechanical Characteristics • • • • Features • • • • • • Low Forward Voltage: 0.9V @ 25°C High Surge Capacity 150°C Operating Junction Temperature 20A Total (10A Per Diode Leg) Guard-ring for Stress Protection Pb-free Package • • Case: Epoxy, Molded Epoxy Meets UL 94V-0 @ 0.125in. Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds Applications • • • TO-220F-3 Power Supply Output Rectification Power Management Instrumentation TO-220-3 (Optional) TO-220-3 (2) Figure 1. Package Types of MBR20200C Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Pin Configuration T Package (TO-220-3) (Optional) (TO-220-3 (2)) 3 A2 2 K 1 A1 TF Package (TO-220F-3) Figure 2. Pin Configuration of MBR20200C (Top View) Figure 3. Internal Structure of MBR20200C Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Ordering Information MBR20200C E1: Lead Free G1: Green Circuit Type Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Part Number Package TO-220-3 (2) TO-220F-3 Blank: Tube Marking ID Lead Free Green Lead Free Green MBR20200CTE1 MBR20200CTFE1 MBR20200CTG1 MBR20200CTF -G1 MBR20200CTE1 MBR20200CTFE1 MBR20200CTG1 MBR20200CTFG1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages. Absolute Maximum Ratings ( Per Diode Leg) (Note 1) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC=133°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=130°C Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) Operating Junction Temperature Range (Note 2) Storage Temperature Range Voltage Rate of Change (Rated VR) ESD (Machine Model=C) ESD (Human Body Model=3B) Symbol Value Unit VRRM VRWM VR 200 V IF(AV) 10 A IFRM 20 A IFSM 150 A TJ TSTG dv/dt 150 -65 to 150 10000 > 400 > 8000 °C °C V/µs V V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/θJA. Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Recommended Operating Conditions Parameter Symbol θJC Condition Value Junction to Case Maximum Thermal Resistance θJA Junction Ambient to Unit TO-220-3/ TO-220-3 (2) 2.0 TO-220F-3 2.5 TO-220-3/ TO-220-3 (2) 60 TO-220F-3 60 °C/W Electrical Characteristics Parameter Symbol Maximum Instantaneous Forward Voltage Drop (Note 3) VF Maximum Instantaneous Reverse Current (Note 3) IR Conditions Value Units IF=10A, TC=25°C 0.9 V Rated DC Voltage, TC=125°C 6.0 Rated DC Voltage, TC=25°C 0.05 mA Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%. Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Typical Performance Characteristics IF, Instantaneous Forward Current (A) 100 10 1 0.1 0 25 C 0 125 C 0 150 C 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage Per Diode 10000 IR, Reverse Current (µA) 1000 100 0 25 C 0 125 C 0 150 C 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 180 200 VR, Reverse Voltage (V) Figure 5. Typical Reverse Current Per Diode Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Typical Performance Characteristics (Continued) 20 Average Forward Current (A) 18 16 14 12 10 8 6 4 2 0 115 120 125 130 135 140 145 150 155 160 o Case Temperature ( C) Figure 6. Average Forward Current vs. Case Temperature (Square, per Diode) Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Mechanical Dimensions TO-220-3 Unit: mm(inch) (Optional) 9.660(0.380) 10.660(0.420) 0.550(0.022) 1.350(0.053) 1.160(0.046) 1.760(0.069) 0.200(0.008) 14.230(0.560) 16.510(0.650) 1.500(0.059) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 1.850(0.073) 3.560(0.140) 4.060(0.160) 2.580(0.102) 3.380(0.133) 7° 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 3° 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) Mar. 2011 2.540(0.100) Rev. 1. 3 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) 1.620(0.064) 1.820(0.072) 3.560(0.140) 3.640(0.143) 0.600(0.024) REF 1.200(0.047) 1.400(0.055) 1.200(0.047) 1.400(0.055) 3° 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 3° 3.000(0.118) REF 3° 1.170(0.046) 1.390(0.055) 0.700(0.028) 0.900(0.035) 2.540(0.100) REF Mar. 2011 0.400(0.016) 0.600(0.024) 2.540(0.100) REF Rev. 1. 3 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C Mechanical Dimensions (Continued) Unit: mm(inch) 2.790(0.110) 4.500(0.177) TO-220F-3 Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788