ADPOW APTGF50DH120T Asymmetrical - bridge npt igbt power module Datasheet

APTGF50DH120T
Asymmetrical - Bridge
NPT IGBT Power Module
VBUS
VBUS SENSE
Q1
G1
CR3
E1
OUT1
OUT2
Q4
G4
CR2
E4
0/VBU S SENSE
NTC1
NTC2
0/VBU S
VBUS
SENSE
G4
VBUS
0/VBUS
E1
0/VBUS
SENSE
G1
OUT2
E4
OUT1
NTC2
NTC1
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
Features
· Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
· Kelvin emitter for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency
operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Easy paralleling due to positive TC of VCEsat
· Low profile
Absolute maximum ratings
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
75
50
150
±20
312
150A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF50DH120T – Rev1 March, 2004
Symbol
VCES
APTGF50DH120T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, IC = 500 µA
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
VGE =15V
Tj = 25°C
IC = 50A
Tj = 125°C
VGE = VCE, IC = 1 mA
VGE = 20 V, VCE = 0V
Min
1200
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Typ
3.2
4.0
4.5
Max
500
2500
3.7
Unit
V
µA
V
6.5
100
V
nA
Typ
3450
330
220
330
35
200
35
65
320
30
5.4
2.3
35
65
360
40
6.9
3.05
Max
Unit
Max
Tj = 125°C
Typ
100
2.0
2.3
1.8
Tj = 25°C
420
Tj = 125°C
580
Tj = 25°C
1250
Tj = 125°C
5350
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy u
Turn-off Switching Energy v
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy u
Turn-off Switching Energy v
VGS = 15V
VBus = 600V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 5 W
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 5 W
pF
nC
ns
mJ
ns
mJ
Reverse diode ratings and characteristics
VF
Reverse Recovery Time
Qrr
Reverse Recovery Charge
50% duty cycle
IF = 100A
IF = 200A
IF = 100A
IF = 100A
VR = 800V
di/dt =200A/µs
IF = 100A
VR = 800V
di/dt =200A/µs
Diode Forward Voltage
trr
Test Conditions
Min
Tc = 70°C
Unit
A
2.5
V
ns
nC
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
2-6
APTGF50DH120T – Rev1 March, 2004
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
APTGF50DH120T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
Max
0.4
0.6
2500
Unit
°C/W
V
-40
-40
-40
150
125
100
4.7
160
M5
°C
N.m
g
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
Min
Typ
68
4080
Max
Unit
kW
K
R25
T: Thermistor temperature
é
æ 1 1 öù RT: Thermistor value at T
expê B25 / 85 çç
- ÷÷ú
è T25 T øû
ë
APT website – http://www.advancedpower.com
3-6
APTGF50DH120T – Rev1 March, 2004
Package outline
APTGF50DH120T
Typical Performance Curve
Output characteristics (VGE=15V)
250µs Pulse Test
< 0.5% Duty cycle
120
TJ=125°C
80
40
TJ=25°C
30
20
TJ=125°C
10
2
4
6
VCE, Collector to Emitter Voltage (V)
0
8
1
2
3
VCE, Collector to Emitter Voltage (V)
Gate Charge
VGE, Gate to Emitter Voltage (V)
Transfer Characteristics
300
250µs Pulse Test
< 0.5% Duty cycle
250
200
150
100
TJ=125°C
50
TJ=25°C
0
0
4
8
12
VGE, Gate to Emitter Voltage (V)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=50A
4
3
2
Ic=25A
1
0
9
14
VCE=600V
12
10
VCE=960V
8
6
4
2
0
50
100
150
200
250
300
350
Gate Charge (nC)
Ic=100A
5
VCE=240V
IC = 50A
TJ = 25°C
16
0
VCE, Collector to Emitter Voltage (V)
8
18
16
On state Voltage vs Gate to Emitter Volt.
9
4
10
11
12
13
14
15
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Junction Temperature
6
3
1
0
90
1.15
80
Ic, DC Collector Current (A)
1.20
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
Ic=25A
2
-50
Breakdown Voltage vs Junction Temp.
Ic=100A
Ic=50A
4
16
1.10
250µs Pulse Test
< 0.5% Duty cycle
V GE = 15V
5
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
-50
-25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF50DH120T – Rev1 March, 2004
0
Ic, Collector Current (A)
40
0
0
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
160
Collector to Emitter Breakdown Voltage
(Normalized)
Output Characteristics (VGE=10V)
50
Ic, Collector Current (A)
Ic, Collector Current (A)
200
APTGF50DH120T
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
45
VCE = 600V
RG = 5Ω
40
VGE = 15V
35
30
25
0
25
50
75
100
400
VGE=15V,
TJ=125°C
350
300
250
VCE = 600V
RG = 5Ω
200
125
0
ICE, Collector to Emitter Current (A)
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
180
50
VCE = 600V
RG = 5Ω
140
tf, Fall Time (ns)
tr, Rise Time (ns)
VGE=15V,
TJ=25°C
100
VGE=15V
60
TJ = 125°C
40
30
TJ = 25°C
VCE = 600V, VGE = 15V, RG = 5Ω
20
20
125
VCE = 600V
RG = 5Ω
24
TJ=125°C,
VGE=15V
20
16
12
TJ=25°C,
VGE=15V
8
4
0
25
50
75
100
ICE, Collector to Emitter Current (A)
12
Eon, 50A
10
Eoff, 50A
8
6
Eon, 25A
4
2
6
Eoff, 25A
0
TJ = 125°C
4
TJ = 25°C
2
0
25
50
75
100
ICE, Collector to Emitter Current (A)
125
Switching Energy Losses vs Junction Temp.
8
Switching Energy Losses (mJ)
14
VCE = 600V
VGE = 15V
RG = 5Ω
0
Switching Energy Losses vs Gate Resistance
18
16
125
8
125
VCE = 600V
VGE = 15V
TJ= 125°C
25
50
75
100
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
28
0
Switching Energy Losses (mJ)
0
VCE = 600V
VGE = 15V
RG = 5Ω
6
Eon, 50A
4
Eoff, 50A
2
Eon, 25A
Eoff, 25A
0
0
10
20
30
40
Gate Resistance (Ohms)
50
0
25
50
75
100
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
125
5-6
APTGF50DH120T – Rev1 March, 2004
25
50
75
100
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
0
APTGF50DH120T
Minimum Switching Safe Operating Area
160
Cies
IC, Collector Current (A)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
1000
Coes
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
120
100
80
60
40
20
Cres
100
140
0
50
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.45
0.4
0.9
0.35
0.7
0.3
0.25
0.5
0.2
0.15
0.3
0.1
0.05
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
VCE = 600V
D = 50%
RG = 5Ω
TJ = 125°C
60
50
40
30
20
10
0
10
20
30
40
50
IC, Collector Current (A)
60
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTGF50DH120T – Rev1 March, 2004
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
70
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