MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC ................................................................... 200A ¡VCES ......................................................... 1700V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm （13.7） （5.2）（8.5） 108 93±0.25 （7.5） （7.5） （24） （7） 3-M6 NUTS 15 30 E2 E2 6 E1 （20） 6 G2 C2E1 C1 （7） 17.5 G1 21.5 25 25 24 4-φ6.5 MOUNTING HOLES 7 18 14 TAB #110 t=0.5 4 2.8 E2 G2 14 E2 22.2 C2E1 LABEL C1 G1 E1 18 7.5 7 8.5 18 14 30 +1.0 –0.5 62 48 ±0.25 4 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short DC, TC = 109°C*1 Pulse Operation Pulse TC = 25°C*1 Unit V V A A W °C °C Vrms N•m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance (Note 2) (Note 2) (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 20mA, VCE = 10V 5.5 7.0 8.5 V — — — — — — — — — — — — — — — — — 2.4 — 2.2 2.45 — — — 1330 — — — — — 20 — — — 0.02 — 2.0 2.8 — 49.4 5.6 1.06 — 550 190 750 350 450 — 3.0 0.063 0.11 — 24 µA Test conditions Parameter Thermal resistance Ratings 1700 ±20 200 400 200 400 1980 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 400 ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 200A, VGE = 15V VCC = 1000V, IC = 200A VGE = ±15V RG = 2.4Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Unit mA V nF nC ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 400 400 300 VCE = 10V 13 250 11 200 150 10 100 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V COLLECTOR CURRENT IC (A) 350 12 15 8 0 4 2 6 9 8 300 250 200 150 100 50 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 100 200 300 400 Tj = 25°C 8 6 IC = 400A IC = 200A 4 2 IC = 80A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 5 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C Tj = 125°C 7 3 2 102 7 5 3 2 101 0.5 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) 350 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) Tj = 25°C 1 1.5 2 2.5 3 3.5 4 7 5 Cies 3 2 101 7 5 3 2 100 Coes 7 5 3 2 Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DY-34A SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) 103 td(off) 7 tf 5 td(on) 3 2 102 Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 125°C Inductive load tr 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 7 5 3 2 103 td(off) td(on) tf 7 5 3 2 Conditions: VCC = 1000V VGE = ±15V IC = 200A Tj = 125°C Inductive load tr 102 7 5 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω 102 Tj = 125°C 7 Inductive load 7 5 3 2 Eon Eoff Err 5 3 2 101 7 5 3 2 100 1 10 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) 104 COLLECTOR CURRENT IC (A) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) 7 5 2 3 5 7 102 2 3 5 7 103 103 Conditions: 7 VCC = 1000V 5 VGE = ±15V 3 IC = 200A 2 Eon Tj = 125°C Inductive load 102 7 Eoff 5 Err 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) SWITCHING TIME td(on), tr, td(off), tf (ns) HIGH POWER SWITCHING USE 7 5 3 2 trr Irr 102 7 Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 25°C Inductive load 5 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 100 7 5 3 2 10–1 7 5 3 2 Single Pulse Tc= 25°C Tc measured point is just under the chips 10–2 7 5 IGBT part: 3 Per unit base = Rth(j–c) = 0.063K/W 2 FWDi part: Per unit base = Rth(j–c) = 0.11K/ W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) EMITTER CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A VCC = 800V 16 VCC = 1000V 12 8 4 0 0 500 1000 1500 2000 GATE CHARGE QG (nC) Feb. 2009 5