MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC • • • = 2.0 Adc Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication Choice of Packages − MJE700 and MJE800 Series These Devices are Pb−Free and are RoHS Compliant* 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT NPN PNP COLLECTOR 2, 4 COLLECTOR 2, 4 BASE 3 BASE 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCEO Collector−Base Voltage MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G VCB Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 W mW/_C –55 to +150 _C Operating and Storage Junction Temperature Range Vdc 60 80 EMITTER 1 EMITTER 1 MJE800 MJE802 MJE803 MJE700 MJE702 MJE703 Vdc 60 80 TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM YWW JEx0yG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.12 _C/W Thermal Resistance, Junction−to−Ambient RqJA 83.3 _C/W Y = Year WW = Work Week JEx0y = Device Code x = 7 or 8 y = 0, 2, or 3 G = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 12 1 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: MJE700/D MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 50 mAdc, IB = 0) MJE700G, MJE800G MJE702G, MJE703G, MJE802G, MJE803G V(BR)CEO Collector Cutoff Current (VCE = 60 Vdc, IB = 0) MJE700G, MJE800G (VCE = 80 Vdc, IB = 0) MJE702G, MJE703G, MJE802G, MJE803G ICEO Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100_C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc 60 80 − − mAdc − 100 − 100 − − 100 500 − 2.0 mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) MJE700G, MJE702G, MJE800G, MJE802G (IC = 2.0 Adc, VCE = 3.0 Vdc) MJE703G, MJE803G (IC = 4.0 Adc, VCE = 3.0 Vdc) All devices hFE Collector−Emitter Saturation Voltage (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) MJE700G, MJE702G, MJE800G, MJE802G (IC = 2.0 Adc, IB = 40 mAdc) MJE703G, MJE803G (IC = 4.0 Adc, IB = 40 mAdc) All devices VCE(sat) Base−Emitter On Voltage (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) MJE700G, MJE702G, MJE800G, MJE802G (IC = 2.0 Adc, VCE = 3.0 Vdc) MJE703G, MJE803G (IC = 4.0 Adc, VCE = 3.0 Vdc) All devices VBE(on) − 750 − 750 − 100 − Vdc − 2.5 − 2.8 − 3.0 Vdc − 2.5 − 2.5 − 3.0 1.0 − DYNAMIC CHARACTERISTICS hfe Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. PD, POWER DISSIPATION (WATTS) 50 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) 4.0 VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RC VCC = 30 V IC/IB = 250 ts IB1 = IB2 TJ = 25°C 2.0 SCOPE t, TIME (s) μ TUT V2 APPROX +8.0 V RB 51 0 V1 APPROX -12 V ≈ 6.0 k D1 ≈ 150 For td and tr, D1 id disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr 0.6 0.4 + 4.0 V 25 ms tf 1.0 0.8 td @ VBE(off) = 0 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 PNP NPN 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 3. Switching Times P(pk) qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.05 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response (MJE700, 800 Series) 5.0ms 3.0 2.0 100ms dc TJ = 150°C 1.0 0.7 0.5 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.3 0.2 0.1 5.0 1.0ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) ACTIVE−REGION SAFE−OPERATING AREA 10 7.0 5.0 MJE702, 703 MJE700 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 7.0 5.0 3.0 2.0 100ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.3 0.2 Figure 5. MJE700 Series 1.0ms dc 1.0 0.7 0.5 0.1 5.0 100 5.0ms MJE802, 803 MJE800 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 6. MJE800 Series There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 are based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 3 MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) PNP MJE700 Series NPN MJE800 Series 6.0 k 6.0 k TJ = 125°C 4.0 k 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.4 0.6 1.0 0.2 IC, COLLECTOR CURRENT (AMP) 2.0 VCE = 3.0 V TJ = 125°C 4.0 k hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 3.0 V 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 4.0 0.1 0.4 0.6 1.0 0.2 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 3.4 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain TJ = 25°C 3.0 2.6 IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 20 10 50 100 3.4 3.0 TJ = 25°C IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 IB, BASE CURRENT (mA) 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 2.0 0.2 0.04 0.06 4.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 9. “On” Voltages http://onsemi.com 4 2.0 4.0 MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) ORDERING INFORMATION Device Package Shipping MJE700G TO−225 (Pb−Free) 50 Units / Bulk MJE702G TO−225 (Pb−Free) 50 Units / Bulk MJE703G TO−225 (Pb−Free) 50 Units / Bulk MJE800G TO−225 (Pb−Free) 50 Units / Bulk MJE802G TO−225 (Pb−Free) 50 Units / Bulk MJE803G TO−225 (Pb−Free) 50 Units / Bulk http://onsemi.com 5 MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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