isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX45 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max.) @ IC= 1A ·High Switching Speed APPLICATIONS ·Designed for high speed, high voltage, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEX Collector-Emitter Voltage VBE= -1.5V 500 V VCER Collector-Emitter Voltage RBE= 100Ω 500 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 7 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX45 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 2.0 V Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 2.0 V ICEO Collector Cutoff Current VCE= 400V; IB= 0 1.0 mA ICEX Collector Cutoff Current VCE= 500V;VBE= -1.5V VCE= 500V;VBE= -1.5V;TC=125℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 15 hFE-2 DC Current Gain IC= 2A; VCE= 4V 8 Current-Gain—Bandwidth Product IC= 1A; VCE= 15V 8 VBE(sat) fT CONDITIONS MIN TYP. MAX UNIT 500 V 7 V 45 MHz Switching Times ton Turn-on Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= 2A; IB1= -IB2=0.4A;VCC= 100V 2 1.0 μs 5.0 μs 1.2 μs