POSEICO AT737HT Phase control thyristor Datasheet

POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
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PHASE CONTROL THYRISTOR
AT737HT
Repetitive voltage up to
Mean forward current
Surge current
2000 V
3239 A
50,4 kA
FINAL SPECIFICATION
Feb. 17 - Issue: 04
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
2000
V
V
RSM
Non-repetitive peak reverse voltage
125
2100
V
V
DRM
Repetitive peak off-state voltage
125
2000
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
200
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
200
mA
I
T (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
3239
A
I
T (AV)
Mean forward current
180° sin ,50 Hz, Tc=85°C, double side cooled
I
TSM
Surge forward current
CONDUCTING
125
2544
A
50,4
kA
I² t
I² t
Sine wave, 10 ms
without reverse voltage
V
T
On-state voltage
On-state current =
V
T(TO)
Threshold voltage
125
0,95
V
r
T
On-state slope resistance
125
0,127
mohm
3
12701 x 10
6300 A
25
1,65
A²s
V
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM up to 3550 A; gate 10V, 5W
125
200
A/µs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
500
V/µs
t d
Gate controlled delay time, typical
VD=100V; gate source 25V, 10W , tr=.5 µs
25
t q
Circuit commutated turn-off time, typical
dv/dt = 20 V/µs linear up to 75% VDRM
Q rr
Reverse recovery charge
di/dt = -20 A/µs, I= 2330 A
I rr
Peak reverse recovery current
VR= 50 V
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=5V, tp=30µs
25
700
mA
V
GT
Gate trigger voltage
VD=5V
25
3,50
V
I
GT
Gate trigger current
VD=5V
25
350
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
150
W
P
G
Average gate power dissipation
2
W
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
11
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
2
°C/kW
T
j
Operating junction temperature
3
320
125
µs
µs
µC
A
GATE
Pulse width 100 µs
MOUNTING
F
-30 / 125
°C
Mounting force
40.0 / 50.0
kN
Mass
1500
ORDERING INFORMATION : AT737HT S 20
standard specification
VRRM/100
g
AT737HT PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
Feb. 17 - Issue: 04
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Th [°C]
130
120
110
100
90
80
70
60
50
30°
60°
90°
120°
180°
DC
40
0
1000
2000
3000
4000
5000
IF(AV) [A]
PF(AV) [W]
7000
DC
180°
6000
120°
60°
5000
90°
30°
4000
3000
2000
1000
0
0
500
1000
1500
2000
IF(AV) [A]
2500
3000
3500
4000
4500
AT737HT PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
Feb. 17 - Issue: 04
DISSIPATION CHARACTERISTICS
SINE WAVE
Th [°C]
130
120
110
100
90
80
70
60
50
30°
60°
90°
120°
180°
40
0
500
1000
1500
2000
2500
3000
3500
IF(AV) [A]
PF(AV) [W]
7000
180°
120°
6000
60°
90°
30°
5000
4000
3000
2000
1000
0
0
500
1000
1500
IF(AV) [A]
2000
2500
3000
3500
AT737HT PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
Feb. 17 - Issue: 04
SURGE CHARACTERISTIC
Tj = 125 °C
12000
60
10000
50
8000
40
ITSM [kA]
On-state Current [A]
ON-STATE CHARACTERISTIC
Tj = 125 °C
6000
30
4000
20
2000
10
0
0
0
0,5
1
1,5
2
2,5
1
On-state Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
12
10
Zth j-h [°C/kW]
8
6
4
2
0
0,001
0,01
0,1
1
t[s]
10
100
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform clamping force,
cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change any data
given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded background) and
characteristics is reported.
100
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