PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage Value BD676/A BD678/A BD680/A BD682/A BD676/A BD678/A BD680/A BD682/A -IC Collector Current -IB PT TJ TStg Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature -IC -ICM -IBM @ Tmb = 25°C Unit 45 60 80 100 45 60 80 100 5 4 6 0.1 40 150 -65 to +150 A W °C °C Value Unit 3.12 100 K/W K/W V V V A THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS 1 PNP BD676/A - BD678/A - BD680/A - BD682/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICBO Ratings Collector cut-off current Test Condition(s) IE=0 , -VCB= - 45 V IE=0 , -VCB= - 60 V IE=0 , -VCB= - 80 V IE=0 , -VCB= - 100 V IE=0 , -VCB= - 45V, Tj= 150°C IE=0 , -VCB= - 60V, Tj= 150°C IE=0 , -VCB= - 80V, Tj= 150°C IE=0 , -VCB= - 100V Tj= 150°C -ICEO Collector cut-off current IB=0 , -VCE= -½VCEOMAX -IEBO Emitter cutoffcurrent IC=0, -VEB=5 V -VCEO(SUS) -VCE(SAT) hFE -VBE hfe fhfe VF -I(SB) Min Typ Max Unit BD676/A BD678/A BD680/A BD682/A BD676/A BD678/A BD680/A - - 0,2 0,2 0,2 0,2 2 2 2 BD682/A - - 2 BD676/A BD678/A BD680/A BD682/A - - 0,5 0,5 0,5 0,5 mA - - 5 mA 45 60 80 100 V - V - - 2,5 - - 2.8 - 2200 - 750 - - - 650 - 750 - - - - 2,5 - - 2.5 10 - - - 60 - kHz - 1,5 - V 0,8 - - A BD676/A BD678/A BD680/A BD682/A BD676, BD678, BD680, BD682 Collector-Emitter -IC=1.5 A, -IB=30 mA saturation BD676A, BD678A, BD680A, BD682A Voltage -IC=2 A, -IB=40 mA BD676, BD678, BD680, BD682 -VCE=3 V, -IC=500 mA BD676, BD678, BD680, BD682 -VCE=3 V, -IC=1,5 A DC Current Gain BD676, BD678, BD680, BD682 -VCE=3 V, -IC=4 A BD676A, BD678A, BD680A, BD682A -VCE=3 V, -IC=2 A BD676, BD678, BD680, BD682 -VCE=3 V, -IC=1,5 A Base-Emitter Voltage(1&2) BD676A, BD678A, BD680A, BD682A -VCE=3 V, -IC=2 A Small signal -VCE=3 V, -IC=1,5 A, f= 1 MHz current gain Ut-off frequency -VCE=3 V, -IC=1,5 A Diode forward IF=1,5 A voltage Second-VCE=50 V, tP= 20ms,non rep., without breakdown heatsink collector current Collector-Emitter sustaning IB=0 , -IC=50 mA Voltage COMSET SEMICONDUCTORS mA V V 2 PNP BD676/A - BD678/A - BD680/A - BD682/A Symbol Ratings Turn-on time Turn-off time ton toff Test Condition(s) -Icon= 1,5A, -Ibon= Iboff= 6mA, Min - Typ Max Unit 0,3 1,5 1.5 5 µs 1. Measured under pulse conditions :tP <300µs, δ <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature. MECHANICAL DATA CASE TO-126 DIMENSIONS A B C D E F G L M N P S Pin 1 : Pin 2 : Pin 3 : min max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 typ. 0.49 0.75 4.4 typ. 15.7 typ. 1.27 typ. 3.75 typ. 3.0 3.2 2.54 typ. Emitter Collector Base Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com [email protected] COMSET SEMICONDUCTORS 3