EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N / IMB11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMB11 (1) 0.5 0.13 1.2 1.6 Each lead has same dimensions ROHM : EMT6 1.3 2.0 (3) (2) (1) 1.25 0.65 (5) (6) 0.2 (4) UMB11N 0.65 Abbreviated symbol : B11 zStructure Epitaxial planar type PNP silicon transistor (Built-in resistor type) 0.1Min. 0to0.1 0.9 The following characteristics apply to both DTr1 and DTr2. 0.7 0.15 2.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 zEquivalent circuit Abbreviated symbol : B11 R1=10kΩ (6) (1) (2) 1.6 R2=10kΩ (1) 2.8 Symbol Limits Unit Supply voltage VCC −50 V Input voltage VIN −40 10 Output current IO −50 IC (Max.) −100 150 (TOTAL) 0.8 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 zAbsolute maximum ratings (Ta = 25°C) Parameter 0to0.1 0.3to0.6 1.1 R2 R1 (3) (2) 0.15 R2 R1 (4) (5) (3) (4) DTr2 DTr2 R2=10kΩ (5) DTr1 DTr1 R1=10kΩ 0.3 (4) (5) (6) R1 R2 0.95 0.95 1.9 2.9 IMB11A IMB11A (3) (2) (1) R1 R2 (6) EMB11 / UMB11N Abbreviated symbol : B11 V mA EMB11, UMB11N Power dissipation IMB11A Pd Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C mW 300 (TOTAL) ∗1 ∗2 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Rev.A 1/2 EMB11 / UMB11N / IMB11A Transistors zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.5 VI (on) −3.0 − − VO (on) − −0.1 −0.3 V II − − −0.88 mA Input voltage Output voltage Input current Unit Conditions VCC= −5V, IO= −100µA V VO= −0.3V, IO= −10mA IO/II= −10mA/ −0.5mA VI= −5V IO (off) − − −0.5 µA DC current gain GI 30 − − − Transition frequency fT − 250 − MHz Input resistance R1 7 10 13 kΩ − Resistance ratio R2 / R1 0.8 1 1.2 − − Output current VCC= −50V, VI=0V VO= −5V, IO= −5mA VCE= −10V, IE=5mA, f=100MHz ∗ ∗ Transition frequency of the device zPackaging specifications Package Type Taping Code T2R TN T110 Basic ordering unit (pieces) 8000 3000 3000 EMB11 UMB11N IMB11A zElectrical characteristic curves −10m VO=−0.3V 1k OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) −10 −5 −2 Ta=−40˚C 25˚C 100˚C −1 −500m −200m −100m −100µ −200µ −500µ −1m 500 Ta=100˚C 25˚C −40˚C −2m −20 −1m −500µ −200µ −100µ −50µ −20µ −10µ −5µ −5m −10m −20m −50m −100m −1µ −0.5 −1 −1.5 −2 −2.5 −3 INPUT VOLTAGE : VI (off) (V) −1 100 50 20 10 5 1 0 OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 200 Ta=100˚C 25˚C −40˚C 2 −2µ −2m VO=−5V VCC=−5V −5m −50 DC CURRENT GAIN : GI −100 Fig.2 Output current vs. input voltage (OFF characteristics) −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI =20 OUTPUT VOLTAGE : VO (on) (V) −500m Ta=100˚C 25˚C −40˚C −200m −100m −50m −20m −10m −5m −-2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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