Powerex Power CM1200E4C-34N Chopper hvigbt module 1200 amperes/1700 volt Datasheet

CM1200E4C-34N
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Chopper HVIGBT
Module
1200 Amperes/1700 Volts
A
D
U
D
K (4 TYP)
4
F
2
B C
V
E
3
1
C
E
G
M (3 TYP)
W
G
H
L
(6 PLACES)
J
N
T
4(C)
2(A)
3(E)
1(K)
C
R
S
X
P
G
Q
E
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
5.19±0.02
130.0±0.5
M
M4 Metric
M4
B
5.51±0.02
140.0±0.5
N
2.42±0.012
61.5±0.3
C
4.88±0.01
124.0±0.25
P
1.50+0.04/-0.0
38.0+1.0/-0.0
D
2.24±0.01
57.0±0.25
Q
0.2±0.008
5.0±0.2
E
1.57±0.008
40.0±0.2
R
0.65 Min.
16.5 Min.
F
0.79±0.004
20.0±0.1
S
0.30 Min.
7.7 Min.
G
1.92±0.008
48.8±0.2
T
0.71±0.008
18.0±0.2
H
0.42±0.008
10.65±0.2
U
1.16±0.02
29.5±0.5
J
0.41±0.008
10.35±0.2
V
0.60±0.008
15.0±0.2
K
M8 Metric
M8
W
0.21±0.008
5.2±0.2
L
0.28 Dia.
7.0 Dia.
X
1.10+0.04/-0.0
28.0+1.0/-0.0
06/13 Rev. 2
Description:
Powerex Chopper HVIGBT
Modules are designed for use in
switching applications. Each
module consists of one IGBT
Transistor having a reverseconnected super-fast recovery
free-wheel diode and an anodecollector connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM1200E4C-34N is a 1700V
(VCES), 1200 Ampere Chopper
HVIGBT Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
1200
34
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Rating
Units
Collector-Emitter Voltage (VGE = 0V)
VCES
1700
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES
±20
Volts
IC
1200
Amperes
Collector Current (Pulse)*1
ICM
2400
Amperes
Emitter Current
IE*2
1200
Amperes
Collector Current (TC = 75°C)
Emitter Current (Pulse)*1
IEM*2
2400
Amperes
Maximum Power Dissipation (TC = 25°C, IGBT Part)*3
PC*3
6500
Watts
Junction Temperature
Tj
-40 to +150
°C
Top
-40 to +125
°C
Storage Temperature
Tstg
-40 to +125
°C
Isolation Voltage (RMS, Sinusoidal, f = 60Hz, 1 minute)
VISO
4000
Volts
Maximum Short Circuit Pulse Width (VCC = 1200V, VCES ≤ 1700V, VGE = 15V, Tj = 125°C)
tpsc
10
µs
Operating Temperature
*1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Topr(max) rating (125°C).
*2 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*3 Junction temperature (Tj) should not increase beyond maximum junction temperature Tj(max) rating (150°C).
2
06/13 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Voltst
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
4
mA
VGE(th)
IC = 120mA, VCE = 10V
6.0
7.0
8.0
Volts
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Emitter-Collector Voltage
—
2.15
2.80
Volts
IC = 1200A, VGE = 15V, Tj = 125°C*4
—
2.40
—
Volts
—
176
—
nF
—
9.6
—
nF
VCE(sat)
Input Capacitance
Total Gate Charge
25°C*4
IC = 1200A, VGE = 15V, Tj =
VCE = 10V, f = 100kHz, VGE = 0V
—
2.8
—
nF
Qg
VCC = 850V, IC = 1200A, VGE = 15V
—
6.8
—
µC
VEC*2
IE = 1200A, VGE = 15V, Tj = 25°C*4
—
2.60
3.30
Volts
IE = 1200A, VGE = 15V, Tj = 125°C*4
—
2.30
—
Volts
Turn-on Delay Time
td(on)
VCC = 850V, IC = 1200A, VGE = ±15V,
—
1.00
—
µs
Turn-on Rise Time
tr
RG(on) = 0.6Ω, Tj = 125°C, LS = 150nH,
—
0.40
—
µs
Turn-on Switching Energy
Turn-off Delay Time
Turn-off Fall Time
Eon
Inductive Load
—
380
—
mJpulse
td(off)
VCC = 850V, IC = 1200A, VGE = ±15V,
—
1.20
—
µs
tf
RG(off) = 3.3Ω, Tj = 125°C, LS = 150nH,
—
0.30
—
µs
Turn-off Switching Energy
Eoff
Inductive Load
—
360
—
mJpulse
Reverse Recovery Time
trr*2
VCC = 850V, IC = 1200A,
—
1.00
—
µs
Repetitive Reverse Current
Irr*2
VGE = ±15V, RG(on) = 0.6Ω,
—
560
—
Amperes
Reverse Recovery Charge
Qrr*2
Tj = 125°C, LS = 150nH,
—
300
—
µC
Reverse Recovery Energy
Erec*2
Inductive Load
—
220
—
mJpulse
VF*5
IE = 1200A, VGE = 0V, Tj = 25°C*4
—
2.60
3.30
Volts
IE = 1200A, VGE = 0V, Tj = 125°C*4
—
2.30
—
Volts
Forward Voltage
Reverse Recovery Time
trr*5
VCC = 850V, IC = 1200A,
—
1.00
—
µs
Reverse Reverse Current
Irr*5
VGE = ±15V, di/dt = 2900A/µs,
—
560
—
Amperes
Reverse Recovery Charge
Qrr*5
Tj = 125°C, LS = 150nH,
—
300
—
µC
Reverse Recovery Energy
Erec*5
Inductive Load
—
220
—
mJpulse
*2 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5 Represent characteristics of the clamp diode.
06/13 Rev. 2
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Volts
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case
Rth(j-c)Q
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
IGBT Part
—
—
19.0
K/kW
Rth(j-c)D
FWDi Part
—
—
42.0
K/kW
Rth(j-c)D
Clamp-Di Part
—
—
42.0
K/kW
Rth(c-f)
λgrease = 1W/m • K
—
16.0
—
K/kW
M
Main Terminals, M8 Screw
—
177
—
in-lb
Mounting Screw, M6
—
53
—
in-lb
Auxiliary Terminals, M4 Screw
—
27
—
in-lb
Mechanical Characteristics
Mounting Torque
Weight
4
m
—
0.8
—
kg
Comparative Tracking Index
CTI
600
—
—
—
Clearance Distance in Air
da
19.5
—
—
mm
Creepage Distance Along Surface
ds
32.0
—
—
mm
Internal Inductance
LC-E(int)
IGBT Part
—
30
—
nH
Internal Lead Resistance
RC-E(int)
TC = 25°C
—
0.28
—
mΩ
06/13 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Voltst
OUTPUT CHARACTERISTICS
(TYPICAL)
2400
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
2000
15
12
VGE = 20V
1600
1200
10
800
400
0
8
0
2
3
4
5
1600
1200
800
400
0
2
4
6
8
10
GATE EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
400
800 1200 1600 2000 2400
COLLECTOR CURRENT, IC, (AMPERES)
06/13 Rev. 2
2000
0
6
VCE = 20V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
5
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCES, (VOLTS)
1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
2400
TRANSFER CHARACTERISTICS
(TYPICAL)
12
5
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
400
800 1200 1600 2000 2400
EMITTER CURRENT, IE, (AMPERES)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Volts
GATE CHARGE CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
Cies
102
101
Coes
VGE = 0V
Tj = 25°C
f = 100kHz
100
10-1
SWITCHING ENERGYS, (mJ/PULSE)
1200
Cres
100
101
800
400
5
2
0
4
6
8
GATE CHARGE, QG, (μC)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
200
0
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
Eon
Eoff
Erec
600
VCC = 850V
IC = 1200A
Tj = 25°C
15
0
102
VCC = 850V
VGE = ±15V
RG(on) = 0.6Ω
RG(off) = 3.3Ω
Tj = 125°C
INDUCTIVE LOAD
1000
0
400
800 1200 1600 2000 2400
COLLECTOR CURRENT, IC, (AMPERES)
6
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
2000
SWITCHING ENERGYS, (mJ/PULSE)
CAPACITANCE, Cies, Coes, Cres, (nF)
103
10
VCC = 850V
VGE = ±15V
IC = 1200A
Tj = 125°C
INDUCTIVE LOAD
1600
Eon
Eoff
Erec
1200
800
400
0
0
2
4
6
8
10
12
GATE RESISTANCE, RG, (Ω)
06/13 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200E4C-34N
Chopper HVIGBT Module
1200 Amperes/1700 Voltst
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
500
td(off)
td(on)
100
tr
tf
VCC = 850V
VGE = ±15V
RG(on) = 0.6Ω
RG(off) = 3.3Ω
Tj = 125°C
Inductive Load
10-1
10-2
102
103
REVERSE RECOVERY CHARGE, Qrr, (μC)
SWITCHING TIME, (ns)
101
400
300
200
100
0
104
VCC = 850V
VGE = ±15V
RG(on) = 0.6Ω
Tj = 125°C
Inductive Load
0
1.0
0.8
0.6
3000
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
19K/kW
(IGBT)
Rth(j-c) =
42K/kW
(FWDi)
0.4
0.2
0
10-3
10-2
10-1
TIME, (s)
06/13 Rev. 2
800 1200 1600 2000 2400
REVERSE BIAS
SAFE OPERATING AREA
(RBSOA)
COLLECTOR CURRENT, IC, (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
1.2
400
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
100
101
2500
2000
1500
VCC ≤ 1200V
VGE = ±15V
Tj = 125°C
RG(off) = 3.3Ω
1000
500
0
Module
Chip
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
7
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