CM1200E4C-34N Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper HVIGBT Module 1200 Amperes/1700 Volts A D U D K (4 TYP) 4 F 2 B C V E 3 1 C E G M (3 TYP) W G H L (6 PLACES) J N T 4(C) 2(A) 3(E) 1(K) C R S X P G Q E Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.19±0.02 130.0±0.5 M M4 Metric M4 B 5.51±0.02 140.0±0.5 N 2.42±0.012 61.5±0.3 C 4.88±0.01 124.0±0.25 P 1.50+0.04/-0.0 38.0+1.0/-0.0 D 2.24±0.01 57.0±0.25 Q 0.2±0.008 5.0±0.2 E 1.57±0.008 40.0±0.2 R 0.65 Min. 16.5 Min. F 0.79±0.004 20.0±0.1 S 0.30 Min. 7.7 Min. G 1.92±0.008 48.8±0.2 T 0.71±0.008 18.0±0.2 H 0.42±0.008 10.65±0.2 U 1.16±0.02 29.5±0.5 J 0.41±0.008 10.35±0.2 V 0.60±0.008 15.0±0.2 K M8 Metric M8 W 0.21±0.008 5.2±0.2 L 0.28 Dia. 7.0 Dia. X 1.10+0.04/-0.0 28.0+1.0/-0.0 06/13 Rev. 2 Description: Powerex Chopper HVIGBT Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverseconnected super-fast recovery free-wheel diode and an anodecollector connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Traction £ Medium Voltage Drives £ High Voltage Power Supplies Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM1200E4C-34N is a 1700V (VCES), 1200 Ampere Chopper HVIGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1200 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200E4C-34N Chopper HVIGBT Module 1200 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts IC 1200 Amperes Collector Current (Pulse)*1 ICM 2400 Amperes Emitter Current IE*2 1200 Amperes Collector Current (TC = 75°C) Emitter Current (Pulse)*1 IEM*2 2400 Amperes Maximum Power Dissipation (TC = 25°C, IGBT Part)*3 PC*3 6500 Watts Junction Temperature Tj -40 to +150 °C Top -40 to +125 °C Storage Temperature Tstg -40 to +125 °C Isolation Voltage (RMS, Sinusoidal, f = 60Hz, 1 minute) VISO 4000 Volts Maximum Short Circuit Pulse Width (VCC = 1200V, VCES ≤ 1700V, VGE = 15V, Tj = 125°C) tpsc 10 µs Operating Temperature *1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Topr(max) rating (125°C). *2 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *3 Junction temperature (Tj) should not increase beyond maximum junction temperature Tj(max) rating (150°C). 2 06/13 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200E4C-34N Chopper HVIGBT Module 1200 Amperes/1700 Voltst Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 4 mA VGE(th) IC = 120mA, VCE = 10V 6.0 7.0 8.0 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Emitter-Collector Voltage — 2.15 2.80 Volts IC = 1200A, VGE = 15V, Tj = 125°C*4 — 2.40 — Volts — 176 — nF — 9.6 — nF VCE(sat) Input Capacitance Total Gate Charge 25°C*4 IC = 1200A, VGE = 15V, Tj = VCE = 10V, f = 100kHz, VGE = 0V — 2.8 — nF Qg VCC = 850V, IC = 1200A, VGE = 15V — 6.8 — µC VEC*2 IE = 1200A, VGE = 15V, Tj = 25°C*4 — 2.60 3.30 Volts IE = 1200A, VGE = 15V, Tj = 125°C*4 — 2.30 — Volts Turn-on Delay Time td(on) VCC = 850V, IC = 1200A, VGE = ±15V, — 1.00 — µs Turn-on Rise Time tr RG(on) = 0.6Ω, Tj = 125°C, LS = 150nH, — 0.40 — µs Turn-on Switching Energy Turn-off Delay Time Turn-off Fall Time Eon Inductive Load — 380 — mJpulse td(off) VCC = 850V, IC = 1200A, VGE = ±15V, — 1.20 — µs tf RG(off) = 3.3Ω, Tj = 125°C, LS = 150nH, — 0.30 — µs Turn-off Switching Energy Eoff Inductive Load — 360 — mJpulse Reverse Recovery Time trr*2 VCC = 850V, IC = 1200A, — 1.00 — µs Repetitive Reverse Current Irr*2 VGE = ±15V, RG(on) = 0.6Ω, — 560 — Amperes Reverse Recovery Charge Qrr*2 Tj = 125°C, LS = 150nH, — 300 — µC Reverse Recovery Energy Erec*2 Inductive Load — 220 — mJpulse VF*5 IE = 1200A, VGE = 0V, Tj = 25°C*4 — 2.60 3.30 Volts IE = 1200A, VGE = 0V, Tj = 125°C*4 — 2.30 — Volts Forward Voltage Reverse Recovery Time trr*5 VCC = 850V, IC = 1200A, — 1.00 — µs Reverse Reverse Current Irr*5 VGE = ±15V, di/dt = 2900A/µs, — 560 — Amperes Reverse Recovery Charge Qrr*5 Tj = 125°C, LS = 150nH, — 300 — µC Reverse Recovery Energy Erec*5 Inductive Load — 220 — mJpulse *2 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *4 Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 Represent characteristics of the clamp diode. 06/13 Rev. 2 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200E4C-34N Chopper HVIGBT Module 1200 Amperes/1700 Volts Thermal Resistance Characteristics Thermal Resistance, Junction to Case Rth(j-c)Q Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance, Case to Fin IGBT Part — — 19.0 K/kW Rth(j-c)D FWDi Part — — 42.0 K/kW Rth(j-c)D Clamp-Di Part — — 42.0 K/kW Rth(c-f) λgrease = 1W/m • K — 16.0 — K/kW M Main Terminals, M8 Screw — 177 — in-lb Mounting Screw, M6 — 53 — in-lb Auxiliary Terminals, M4 Screw — 27 — in-lb Mechanical Characteristics Mounting Torque Weight 4 m — 0.8 — kg Comparative Tracking Index CTI 600 — — — Clearance Distance in Air da 19.5 — — mm Creepage Distance Along Surface ds 32.0 — — mm Internal Inductance LC-E(int) IGBT Part — 30 — nH Internal Lead Resistance RC-E(int) TC = 25°C — 0.28 — mΩ 06/13 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200E4C-34N Chopper HVIGBT Module 1200 Amperes/1700 Voltst OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) 2000 15 12 VGE = 20V 1600 1200 10 800 400 0 8 0 2 3 4 5 1600 1200 800 400 0 2 4 6 8 10 GATE EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT, IC, (AMPERES) 06/13 Rev. 2 2000 0 6 VCE = 20V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCES, (VOLTS) 1 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 2400 TRANSFER CHARACTERISTICS (TYPICAL) 12 5 Tj = 25°C Tj = 125°C 4 3 2 1 0 0 400 800 1200 1600 2000 2400 EMITTER CURRENT, IE, (AMPERES) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200E4C-34N Chopper HVIGBT Module 1200 Amperes/1700 Volts GATE CHARGE CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) Cies 102 101 Coes VGE = 0V Tj = 25°C f = 100kHz 100 10-1 SWITCHING ENERGYS, (mJ/PULSE) 1200 Cres 100 101 800 400 5 2 0 4 6 8 GATE CHARGE, QG, (μC) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 200 0 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Eon Eoff Erec 600 VCC = 850V IC = 1200A Tj = 25°C 15 0 102 VCC = 850V VGE = ±15V RG(on) = 0.6Ω RG(off) = 3.3Ω Tj = 125°C INDUCTIVE LOAD 1000 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT, IC, (AMPERES) 6 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 2000 SWITCHING ENERGYS, (mJ/PULSE) CAPACITANCE, Cies, Coes, Cres, (nF) 103 10 VCC = 850V VGE = ±15V IC = 1200A Tj = 125°C INDUCTIVE LOAD 1600 Eon Eoff Erec 1200 800 400 0 0 2 4 6 8 10 12 GATE RESISTANCE, RG, (Ω) 06/13 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1200E4C-34N Chopper HVIGBT Module 1200 Amperes/1700 Voltst HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 500 td(off) td(on) 100 tr tf VCC = 850V VGE = ±15V RG(on) = 0.6Ω RG(off) = 3.3Ω Tj = 125°C Inductive Load 10-1 10-2 102 103 REVERSE RECOVERY CHARGE, Qrr, (μC) SWITCHING TIME, (ns) 101 400 300 200 100 0 104 VCC = 850V VGE = ±15V RG(on) = 0.6Ω Tj = 125°C Inductive Load 0 1.0 0.8 0.6 3000 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 19K/kW (IGBT) Rth(j-c) = 42K/kW (FWDi) 0.4 0.2 0 10-3 10-2 10-1 TIME, (s) 06/13 Rev. 2 800 1200 1600 2000 2400 REVERSE BIAS SAFE OPERATING AREA (RBSOA) COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 1.2 400 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 101 2500 2000 1500 VCC ≤ 1200V VGE = ±15V Tj = 125°C RG(off) = 3.3Ω 1000 500 0 Module Chip 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 7