HAT2173N Silicon N Channel Power MOS FET Power Switching REJ03G1684-0100 Rev.1.00 May 28, 2008 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 5 6 7 8 DDDD 2X XX 1(S) 2(S) 3(S) 4(G) 8(D) 7(D) 6(D) 5(D) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 1 of 7 Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Ratings 100 ±20 25 100 25 25 62.5 30 4.17 Unit V V A A A A mJ W °C/W Tch Tstg 150 –55 to +150 °C °C HAT2173N Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Notes: 4. Pulse test REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 2 of 7 Min 100 ±20 — — 4.0 — — 27 — — — — — — — — — Typ — — — — — 12.3 13.3 45 4350 520 150 0.5 61 23 14.5 20 15 Max — — ±10 1 6.0 15.3 17.8 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns — — — — 37 5.7 0.82 55 — — 1.07 — ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, ID = 20mA ID = 12.5 A, VGS = 10 V Note4 ID = 12.5 A, VGS = 8 V Note4 ID = 12.5 A, VDS = 10 V Note4 VDS = 10 V,VGS = 0, f = 1 MHz VDD = 50 V, VGS = 10 V, ID = 25 A VGS = 10 V, ID = 12.5 A, VDD ≅ 30 V, RL = 2.4 Ω, Rg = 4.7 Ω IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0 diF/ dt = 100 A/ µs HAT2173N Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 Drain Current ID (A) 100 30 20 10 0 50 40 100 150 1 Operation in this area is 0.1 limited by RDS(on) 1 3 10 30 100 500 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 8V 6.2 V 5.8 V 20 5.6 V 10 5.4 V 4 6 VDS = 10 V Pulse Test 40 30 25°C 20 Tc = 75°C -25°C 10 5.2 V VGS = 5.0 V 2 50 Pulse Test 6.0 V 30 0 0.01 0.1 0.3 200 Drain Current ID (A) Drain Current ID (A) 10 Case Temperature Tc (°C) 50 Drain to Source Voltage VDS(on) (mV) 10 10 µs 1 m 0 µs s DC = 1 Op 0 m s er at ion PW Tc = 25°C 1 shot Pulse 8 0 10 2 4 6 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 400 300 ID = 50 A 200 20 A 100 0 10 A 4 8 12 16 20 Gate to Source Voltage VGS (V) REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 3 of 7 Drain to Source On State Resistance RDS(on) (mΩ) Channel Dissipation Pch (W) 40 100 Pulse Test 50 20 VGS = 8 V 10 10 V 5 2 1 1 3 10 30 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2173N 50 Pulse Test 40 ID = 5 A, 10 A, 20 A 30 20 VGS = 8 V 10 5 A, 10 A, 20 A 10 V 0 -25 0 25 50 75 100 125 150 100 Tc = -25°C 30 10 75°C 3 25°C 1 VDS = 10 V Pulse Test 0.3 0.1 0.1 0.3 3 1 30 10 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 10000 Capacitance C (pF) Ciss 50 20 10 0.1 1 3 10 30 Crss 100 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VGS ID = 25 A VDD = 100 V 50 V 25 V 20 16 12 150 VDS = 100 V 8 100 50 V 4 25 V VDD 0 Coss 300 Reverse Drain Current IDR (A) 200 50 1000 100 20 40 60 80 Gate Charge Qg (nc) REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 4 of 7 0 100 1000 Switching Time t (ns) 250 0.3 3000 30 di / dt = 100 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 300 Case Temperature Tc (°C) 100 Drain to Source Voltage VDS (V) 1000 300 tf 100 td(off) 30 td(on) 10 3 tr 1 0.1 0.2 0.5 1 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 2 5 10 20 Drain Current ID (A) 50 100 HAT2173N Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 40 10 V 30 20 5V V GS = 0 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 100 IAP = 25 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 Channel Temperature Tch (°C) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 4.17°C/ W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 0.0 0.01 10 µ lse t ho 1s 1m 10 m Pulse Width PW (s) REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 5 of 7 D= PW T PW T pu 100 µ 150 100 m 1 10 HAT2173N Avalanche Test Circuit Avalanche Waveform L VDS Monitor EAR = 1 L • IAP2 • 2 VDSS VDSS - VDD IAP Monitor Rg Vin 15 V D. U. T V(BR)DSS VDD IAP VDS 50 Ω ID 0 VDD Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform 90% D.U.T. RL Vin Vout Vin 10 V VDS = 30 V 10% 90% td(on) REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 6 of 7 10% tr 10% 90% td(off) tf HAT2173N Package Dimensions Package Name LFPAK-i JEITA Package Code RENESAS Code PTSP0008DC-A Previous Code LFPAK-iV MASS[Typ.] 0.080g + 0.05 4.9 0.25 – 0.03 5.3Max 5 + 0.25 4 0.60 – 0.30 1 + 0.05 3.3 0.20 – 0.03 1.3Max 6.1 – 0.3 + 0.1 3.2 3.95 8 + 0.03 0.07 – 0.04 1.1Max 0° – 8° 0.75Max 1.27 0.10 0.4 ± 0.06 0.25 M ( Ni/Pd/Au plating ) Ordering Information Part No. HAT2173N-EL-E Quantity 2500 pcs REJ03G1684-0100 Rev.1.00 May 28, 2008 Page 7 of 7 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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