NE521 High−Speed Dual−Differential Comparator/Sense Amp Features • • • • http://onsemi.com TTL-Compatible Strobes and Outputs Large Common-Mode Input Voltage Range Operates from Standard Supply Voltages Pb−Free Packages are Available MARKING DIAGRAMS 14 Applications • MOS Memory Sense Amp • A-to-D Conversion • High-Speed Line Receiver SOIC−14 D SUFFIX CASE 751A 1 NE521G AWLYWW 1 MAXIMUM RATINGS Rating Supply Voltage Positive Negative Differential Input Voltage Symbol Value V+ V− +7.0 −7.0 VIDR "6.0 Input Voltage Common Mode Strobe/Gate VIN Maximum Power Dissipation (Note 1) TA = 25°C (Still−Air) N Package D Package PD Thermal Resistance, Junction−to−Ambient N Package D Package RqJA Unit V 14 PDIP−14 N SUFFIX CASE 646 1 NE521N AWLYYWWG 1 V V "5.0 +5.25 mW 1420 1040 A WL Y, YY WW G PIN CONNECTIONS °C/W 100 145 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package D, N Packages Operating Temperature Range TA 0 to 70 °C Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ 150 °C Lead Soldering Temperature (10 sec max) Tsld +230 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Derate above 25°C at the following rates: N package at 10 mW/°C D package at 6.9 mW/°C. INPUT 1A 1 14 V+ INPUT 1B 2 13 V− NC 3 12 INPUT 2A OUTPUT 1Y 4 11 INPUT 2B STROBE 1G 5 10 NC STROBE S 6 9 OUTPUT 2Y GROUND 7 8 STROBE 2G (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 4 1 Publication Order Number: NE521/D NE521 LOGIC FUNCTION TABLE VID (A+, B) Strobe S Strobe G Output (Y) VID v −VOS H H L −VOS < VID < VOS H H Undefined VID w VOS H H H X L X H X X L H (1) INPUT 1A (2) INPUT 1B (12) INPUT 2A (11) INPUT 2B (4) OUTPUT 1Y (5) STROBE 1G STROBE S (6) (9) (8) OUTPUT 3Y STROBE 2G Figure 1. Block Diagram 14 V+ R2 R17 R1 1 − Q2 Q8 R5 V− R24 4 6 5 Q13 R3 R14 Q11 R15 R23 R22 D1 D2 Q27 R6 7 R8 R7 R10 Q18 Q16 11 Q7 Q5 Q6 Q28 Q10 R4 12 Q29 Q26 + Q9 13 R25 Q30 R16 D6 D7 Q1 R21 Q25 Q3 Q4 2 R20 Q17 R9 Q36 Q19 D3 R28 R29 + − Q35 Q15 Q14 D4 Q20 R12 R11 D5 Q22 Q23 8 Q24 R18 Q21 R19 Q32 Q31 Figure 2. Equivalent Schematic http://onsemi.com 2 Q34 Q32 R26 V+ 9 R30 R27 R34 NE521 DC ELECTRICAL CHARACTERISTICS (V+ = +5.0 V; V− = −5.0 V, TA = 0°C to +70°C, unless otherwise noted.) Limits Test Conditions Symbol Input Offset Voltage At 25°C Overtemperature Range V+ = +4.75 V; V− = −4.75 V VOS Input Bias Current At 25°C Overtemperature Range V+ = +5.25 V; V− = −5.25 V IBIAS Input Offset Current At 25°C Overtemperature Range V+ = +5.25 V; V− = −5.25 V IOS Common-Mode Voltage Range V+ = +4.75 V; V− = −4.75 V VCM Input Current High V+ = +5.25 V; V− = −5.25 V VIH = 2.7 V 1G or 2G Strobe Common Strobe S IIH Characteristic Input Current Low Output Voltage High Low VIL = 0.5 V 1G or 2G Strobe Common Strobe S IIL VI(S) = 2.0 V V+ = +4.75 V; V− = −4.75 V; ILOAD = −1.0 mA V+ = +5.25 V; V− = −5.25 V; ILOAD = 20 mA Supply Voltage Positive Negative − Supply Current Positive Negative V+ = +5.25 V; V− = −5.25 V; TA = 25°C Short−Circuit Output Current − VOH Min Typ Max − − 6.0 − 7.5 10 − − 7.5 − 20 40 − − 1.0 − 5.0 12 −3.0 − +3.0 Unit mV mA mA V mA − − − − 50 100 − − − − −2.0 −4.0 2.7 3.4 VOL mA V 0.5 V V+ V− 4.75 −4.75 5.0 −5.0 5.25 −5.25 ICC+ ICC− − − 27 −15 35 −28 ISC −40 − −100 mA mA AC ELECTRICAL CHARACTERISTICS (TA = 25°C; RL = 280 W; CL = 15 pF, V+ = 5.0 V; V− = 5.0 V, guaranteed by characterization) Limits Characteristic From Input To Output Symbol Min Typ Max Amp Amp Strobe Strobe Output Output Output Output tPLH(D) tPHL(D) tPLH(S) tPHL(S) − − − − 9.6 8.2 4.8 3.9 12 9.0 10 6.0 − − fMAX 40 55 − Unit Large−Signal Switching Speed Propagation Delay Low to High (Note 2) High to Low (Note 2) Low to High (Note 3) High to Low (Note 3) Max. Operating Frequency ns 2. Response time measured from 0 V point of "100 mVP-P 10 MHz square wave to the 1.5 V point of the output. 3. Response time measured from 1.5 V point of input to 1.5 V point of the output. http://onsemi.com 3 MHz NE521 3 100mV 2 5mV 20mV 1 10mV 0 100 50 0 0 5 10 15 20 25 TA = 25oC VS = +5V 4 3 2 50mV 5mV 1 100mV 10mV 12 TESPONSE TIME (ns) OUTPUT VOLTAGE (V) VS = +5V TA = 25oC 4 INPUT VOLTAGE (mV) INPUT VOLTAGE (mV) OUTPUT VOLTAGE (V) TYPICAL PERFORMANCE CHARACTERISTICS 0 100 30 0 5 10 4 15 20 25 60 30 20 Figure 4. Response Time for Various Input Overdrives PROPAGATION DELAY (ns) 8 TPD (HL) 6 16 14 12 10 TPD (LH) 8 TPD (HL) 6 3.0 2.0 1.0 VOL 2 20 30 40 50 60 70 100 1000 11 1.0 INPUT OFSET CURRENT ( μ A) INPT BIAS CURRENT ( μ A) 1.1 10 9 8 7 6 +25 o Figure 8. Output Voltage vs. Ambient Temperature 0.9 0.8 0.7 0.6 0.5 −25 +25 +75 AMBIENT TEMPERATURE (oC) +125 −75 −25 +25 +75 AMBIENT TEMPERATURES (oC) Figure 9. Input Bias Current vs. Ambient Temperature Figure 10. Input Offset Current vs. Ambient Temperature http://onsemi.com 4 +75 AMBIENT TEMPERATURE ( C) Figure 7. Propagation Delay for Various Input Voltages 12 −75 −25 −75 INPUT VOLTAGE (m Vp−p) INPUT VOLTAGE (mVp−p) Figure 6. Propagation Delay for Various Input Voltages +140 VOH 4 10 +100 4.0 VS = +5V 10MHz SQUARE WAVE INPUT TA = 25oC 18 TPD (LH) +60 Figure 5. Response Time vs. Temperature OUTPUT VOLTAGE (V) VS = +5V 10MHz SQUARE WAVE INPUT TA = 25oC −20 AMBIENT TEMPERATURE (oC) TIME — nS 20 PROPAGATION DELAY (ns) TPD (HL) 6 2 0 Figure 3. Response Time for Various Input Overdrives 10 TPD (LH) 8 50 TIME — nS 12 10 +125 +125 NE521 ORDERING INFORMATION Device Temperature Range Package NE521D SOIC−14 NE521DG SOIC−14 (Pb−Free) NE521DR2 NE521DR2G Shipping† 55 Units/Rail SOIC−14 0 to +70°C SOIC−14 (Pb−Free) NE521N PDIP−14 NE521NG PDIP−14 (Pb−Free) 2500/Tape & Reel 25 Units/Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 5 NE521 PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 14 8 −B− P 7 PL 0.25 (0.010) M 7 1 G −T− D 14 PL 0.25 (0.010) T B S A DIM A B C D F G J K M P R J M K M F R X 45 _ C SEATING PLANE B M S SOLDERING FOOTPRINT* 7X 7.04 14X 1.52 1 14X 0.58 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 NE521 PACKAGE DIMENSIONS PDIP−14 CASE 646−06 ISSUE P 14 8 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B A F L N C −T− SEATING PLANE H G D 14 PL J K 0.13 (0.005) M DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 −−− 10 _ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 −−− 10 _ 0.38 1.01 M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NE521/D