ON MUN5313DW1T1G Dual bias resistor transistor Datasheet

MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
http://onsemi.com
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5311DW1T1 series,
two complementary BRT devices are housed in the SOT−363 package
which is ideal for low power surface mount applications where board
space is at a premium.
(3)
(2)
R1
(1)
R2
Q1
Q2
R2
R1
(4)
(5)
(6)
Features
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
Pb−Free Packages are Available
6
1
SOT−363
CASE 419B
STYLE 1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
PD
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
mW/°C
RqJA
670 (Note 1)
490 (Note 2)
°C/W
Symbol
Max
Unit
PD
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
Total Device Dissipation
TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance −
Junction-to-Ambient
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance −
Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
MARKING DIAGRAM
6
xx M G
G
1
xx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING AND DEVICE MARKING
INFORMATION
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 11
1
Publication Order Number:
MUN5311DW1T1/D
MUN5311DW1T1 Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
MUN5311DW1T1
MUN5311DW1T1G
SOT−363
SOT−363
(Pb−Free)
11
10
10
MUN5312DW1T1
MUN5312DW1T1G
SOT−363
SOT−363
(Pb−Free)
12
22
22
MUN5313DW1T1
MUN5313DW1T1G
SOT−363
SOT−363
(Pb−Free)
13
47
47
MUN5314DW1T1
MUN5314DW1T1G
SOT−363
SOT−363
(Pb−Free)
14
10
47
MUN5315DW1T1
MUN5315DW1T1G
SOT−363
SOT−363
(Pb−Free)
15
10
∞
MUN5316DW1T1
MUN5316DW1T1G
SOT−363
SOT−363
(Pb−Free)
16
4.7
∞
MUN5330DW1T1
MUN5330DW1T1G
SOT−363
SOT−363
(Pb−Free)
30
1.0
1.0
MUN5331DW1T1
MUN5331DW1T1G
SOT−363
SOT−363
(Pb−Free)
31
2.2
2.2
MUN5332DW1T1
MUN5332DW1T1G
SOT−363
SOT−363
(Pb−Free)
32
4.7
4.7
MUN5333DW1T1
MUN5333DW1T1G
SOT−363
SOT−363
(Pb−Free)
33
4.7
47
MUN5334DW1T1
MUN5334DW1T1G
SOT−363
SOT−363
(Pb−Free)
34
22
47
MUN5335DW1T1
MUN5335DW1T1G
SOT−363
SOT−363
(Pb−Free)
35
2.2
47
Shipping†
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
Unit
OFF CHARACTERISTICS
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued)
Characteristic
Symbol
Min
Typ
Max
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
VCE(sat)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5335DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
http://onsemi.com
3
Vdc
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued)
Characteristic
Symbol
Min
Typ
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.0
0.21
−
1.0
0.1
0.47
0.047
1.2
0.25
−
1.2
0.185
0.56
0.056
Unit
ON CHARACTERISTICS (Note 4)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
VOL
MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5313DW1T1
VOH
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5330DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
4
Vdc
Vdc
kW
MUN5311DW1T1 Series
ALL MUN5311DW1T1 SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
5
150
MUN5311DW1T1 Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 NPN TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
−25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
0.1
0.01
VO = 5 V
0.001
50
TA=−25°C
10
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
http://onsemi.com
6
50
10
MUN5311DW1T1 Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 PNP TRANSISTOR
TA=−25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
−25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
100
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0
10
8
9
Figure 10. Output Current versus Input
Voltage
10
0.1
100
25°C
75°C
Figure 9. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 11. Input Voltage versus Output Current
http://onsemi.com
7
50
10
MUN5311DW1T1 Series
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 NPN TRANSISTOR
IC/IB = 10
25°C
TA=−25°C
0.1
75°C
0.01
0.001
0
20
−25°C
100
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
75°C
25°C
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
Figure 14. Output Capacitance
2
0
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
25°C
10
50
40
VCE = 10 V
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
http://onsemi.com
8
50
MUN5311DW1T1 Series
1000
10
IC/IB = 10
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 PNP TRANSISTOR
25°C
TA=−25°C
75°C
0.1
0.01
0
20
IC, COLLECTOR CURRENT (mA)
40
TA=75°C
10
1
Figure 18. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
TA=−25°C
10
1
0.1
0.01
0.001
Figure 19. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
Figure 20. Output Current versus Input Voltage
TA=−25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
3
25°C
−25°C
100
10
50
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
http://onsemi.com
9
10
MUN5311DW1T1 Series
10
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 NPN TRANSISTOR
1
25°C
TA=−25°C
75°C
0.1
0.01
0
TA=75°C
25°C
−25°C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
1
Figure 22. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
25°C
75°C
0.6
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 25. Output Current versus Input Voltage
Figure 24. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 23. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
http://onsemi.com
10
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
1000
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
−25°C
1
0.1
0.01
Figure 29. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 30. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 31. Input Voltage versus Output Current
http://onsemi.com
11
10
MUN5311DW1T1 Series
300
1
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 NPN TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
−25°C
150
100
50
0
80
1
2
4
6
Figure 32. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
−25°C
10
VO = 5 V
1
50
Figure 34. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
Figure 35. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 33. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 36. Input Voltage versus Output Current
http://onsemi.com
12
50
10
MUN5311DW1T1 Series
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 PNP TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
−25°C
120
100
80
60
40
20
0
80
2
1
4
6
Figure 37. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=−25°C
75°C
1
0
10
8
10
Figure 40. Output Current versus Input Voltage
10
0.1
25°C
−25°C
1
50
Figure 39. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 38. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
http://onsemi.com
13
MUN5311DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
100
10
1
50
25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 44. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 45. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 43. DC Current Gain
12
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 NPN TRANSISTOR
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
http://onsemi.com
14
50
MUN5311DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
75°C
10
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 49. Output Capacitance
25°C
1
TA = −25°C
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
9
10
Figure 50. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 48. DC Current Gain
4.5
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 PNP TRANSISTOR
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 51. Input Voltage versus Output Current
http://onsemi.com
15
50
MUN5311DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 52. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 54. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 55. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 53. DC Current Gain
12
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 NPN TRANSISTOR
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 56. Input Voltage versus Output Current
http://onsemi.com
16
50
MUN5311DW1T1 Series
1
1000
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
25°C
100
10
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
100
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 59. Output Capacitance
75°C
10
25°C
TA = −25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 60. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
100
Figure 58. DC Current Gain
4.5
4
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 PNP TRANSISTOR
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 61. Input Voltage versus Output Current
http://onsemi.com
17
50
MUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
25°C
TA = −25°C
1
30
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
10
75°C
10
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
100
25°C
1
TA = −25°C
0.1
0.01
0.001
100
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 65. Input Voltage versus Output Current
Figure 64. Output Current versus Input Voltage
http://onsemi.com
18
25
MUN5311DW1T1 Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
75°C
10
25°C
TA = −25°C
VCE = 10 V
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 66. VCE(sat) versus IC
Figure 67. DC Current Gain
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 68. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 69. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
4
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 70. Input Voltage versus Output Current
http://onsemi.com
19
50
MUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
1
30
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 71. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10 75°C
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 73. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 74. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 72. DC Current Gain
12
0
25°C
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 75. Input Voltage versus Output Current
http://onsemi.com
20
25
MUN5311DW1T1 Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
TA = −25°C
VCE = 10 V
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 76. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 78. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 79. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
0
100
Figure 77. DC Current Gain
4.5
Cob, CAPACITANCE (pF)
25°C
75°C
10
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 80. Input Voltage versus Output Current
http://onsemi.com
21
50
MUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
TA = −25°C
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 81. VCE(sat) versus IC
Figure 82. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
8
6
4
2
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 83. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 84. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
12
10
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 85. Input Voltage versus Output Current
http://onsemi.com
22
50
MUN5311DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
TA = −25°C
10
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 86. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
5
4
3
2
1
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 88. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 89. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 87. DC Current Gain
6
0
25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 90. Input Voltage versus Output Current
http://onsemi.com
23
50
MUN5311DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 NPN TRANSISTOR
75°C
−25°C
25°C
0.01
0.001
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
75°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 91. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25°C
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 93. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 94. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3
100
Figure 92. DC Current Gain
4
3.5
25°C
10
1
30
TA = −25°C
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 95. Input Voltage versus Output Current
http://onsemi.com
24
25
MUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 96. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
7
6
5
4
3
2
1
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
0.1
TA = −25°C
0.01
0.001
50
Figure 98. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 99. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 97. DC Current Gain
8
0
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 100. Input Voltage versus Output
Current
http://onsemi.com
25
50
MUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 101. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
1
0.1
TA = −25°C
0.01
0.001
50
75°C
10
VO = 5 V
0
Figure 103. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
Figure 104. Output Current versus Input
Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 102. DC Current Gain
3.5
0
25°C
10
1
50
TA = −25°C
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 105. Input Voltage versus Output
Current
http://onsemi.com
26
50
10
MUN5311DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
75°C
−25°C
0.01
0.001
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 PNP TRANSISTOR
0
5
25°C
10
15
25
20
IC, COLLECTOR CURRENT (mA)
30
75°C
100
TA = −25°C
25°C
10
1
1
Figure 106. VCE(sat) versus IC
10
IC, COLLECTOR CURRENT (mA)
Figure 107. DC Current Gain
http://onsemi.com
27
100
MUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 108. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
6
4
2
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
75°C
VO = 5 V
0
Figure 110. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
Figure 111. Output Current versus Input
Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
8
100
Figure 109. DC Current Gain
12
10
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 112. Input Voltage versus Output
Current
http://onsemi.com
28
50
10
MUN5311DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 113. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
75°C
1
TA = −25°C
0.1
0.01
0.001
50
25°C
VO = 5 V
0
Figure 115. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
9
Figure 116. Output Current versus Input
Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3.5
100
Figure 114. DC Current Gain
4.5
4
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 117. Input Voltage versus Output
Current
http://onsemi.com
29
50
10
MUN5311DW1T1 Series
1
0.1
0.01
75°C
25°C
−25°C
IC/IB = 10
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1 NPN TRANSISTOR
1000
75°C
TA = −25°C
100
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 118. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA = −25°C
1
VO = 5 V
0.1
60
0
1
2
3
4
TA = −25°C
VO = 0.2 V
75°C
0
2
6
7
8
9
Figure 121. Output Current versus Input
Voltage
10
1
5
Vin, INPUT VOLTAGE (VOLTS)
100
25°C
75°C
10
Figure 120. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 119. DC Current Gain
1.2
0
25°C
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 122. Input Voltage versus Output
Current
http://onsemi.com
30
20
10
MUN5311DW1T1 Series
1000
1
75°C
75°C
25°C
0.1
0.01
0.001
0
VCE = 10 V
−25°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1 PNP TRANSISTOR
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 123. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
1
25°C
TA = −25°C
0.1
0.01
0.001
50
75°C
10
VO = 5 V
0
Figure 125. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
10
75°C
1
25°C
VO = 0.2 V
0.1
0
9
Figure 126. Output Current versus Input
Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 124. DC Current Gain
5
0
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 127. Input Voltage versus Output
Current
http://onsemi.com
31
50
10
MUN5311DW1T1 Series
1
TA = −25°C
75°C
0.1
25°C
0.01
IC/IB = 10
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1 NPN TRANSISTOR
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 128. VCE(sat) versus IC
Figure 129. DC Current Gain
100
1.0
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA = −25°C
10
25°C
1
0.1
0.01
0.001
60
75°C
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
Figure 131. Output Current versus Input
Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 130. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
1.2
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 132. Input Voltage versus Output
Current
http://onsemi.com
32
25
11
MUN5311DW1T1 Series
1000
1
IC/IB = 10
−25°C
75°C
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1 PNP TRANSISTOR
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
75°C
100
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 133. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
1
TA = −25°C
0.1
0.01
0.001
50
75°C
10
VO = 5 V
0
Figure 135. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
10
75°C
1
25°C
VO = 0.2 V
0.1
0
9
Figure 136. Output Current versus Input
Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 134. DC Current Gain
5
0
25°C
10
1
50
VCE = 10 V
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 137. Input Voltage versus Output
Current
http://onsemi.com
33
50
10
MUN5311DW1T1 Series
PACKAGE DIMENSIONS
SOT−363
CASE 419B−02
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
A
G
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
D 6 PL
0.2 (0.008)
M
B
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
N
J
C
H
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
34
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
MUN5311DW1T1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
35
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MUN5311DW1T1/D