FR20K05 thru FR20MR05
Silicon Fast
Recovery Diode
VRRM = 800 V - 1000 V
IF = 20 A
Features
• High Surge Capability
• Types from 800 V to 1000 V VRRM
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
FR20K(R)05
FR20M(R)05
Unit
VRRM
800
1000
V
VRMS
560
700
V
VDC
800
1000
V
Symbol
Conditions
Continuous forward current
IF
TC ≤ 100 °C
20
20
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
250
250
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
Conditions
FR20K(R)05
FR20M(R)05
Unit
VF
IF = 20 A, Tj = 25 °C
VR = 800 V, Tj = 25 °C
VR = 800 V, Tj = 125 °C
1.0
25
10
1.0
25
10
μA
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
500
500
nS
0.6
0.6
°C/W
IR
V
Recovery Time
Maximum reverse recovery
time
TRR
Thermal characteristics
Thermal resistance, junction
- case
RthJC
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FR20K05 thru FR20MR05
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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FR20K05 thru FR20MR05
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
F
C
E
A
Inches
Min
Millimeters
Max
A
B
Min
Max
17.19
17.44
1/4 –28 UNF
0.669
0.687
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
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