ASF133 ASF133 Data Sheet 3 V IF Gain Block Amplifier MMIC over DC~1000 MHz 1. Product Overview 1.1 General Description ASF133, 3 V internally matched IF gain block amplifier MMIC, has excellent input and output return loss, high linearity, and low noise over a wide range of frequency DC~1000 MHz, being suitable for use in both receiver and transmitter of telecommunication systems up to 1 GHz. The amplifier is available in a SOT363 package and passes through the stringent 100% DC & RF test via an automated test handler. 1.2 Features 21.8 dB Gain at 150 MHz 18.5 dBm P1dB at 150 MHz 33 dBm Output IP3 at 150 MHz 2.2 dB NF at 150 MHz MTTF > 100 Years Minimum External Matching Components Single Supply: +3 V 1.3 Applications Base Station Infrastructure Repeater Telecommunication System 1.4 Package Profile & RoHS Compliance SOT363, 2.1x2.0 mm2, surface mount 1/9 ASB Inc. [email protected] RoHS-compliant July 2014 ASF133 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 MHz Gain 21.8 21.8 21.6 21.3 20.0 dB S11 -18.0 -20.0 -18.0 -15.5 -10.0 dB S22 -21.0 -20.5 -19.0 -16.5 -10.0 dB Noise Figure 2.1 2.2 2.3 2.3 2.4 dB IP31) 33 33 34 32 30 dBm Output P1dB 18.0 18.5 18.5 18.5 17.5 dBm Current 54 mA Device Voltage +3 V Output 1) OIP3 is measured with two tones at the output power of +3 dBm/tone separated by 1 MHz. 2.2 Product Specification Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Min Typ Frequency Unit 150 MHz Gain 21.0 21.8 dB S11 -18.0 -20.0 dB S22 -18.0 -20.5 dB Noise Figure 2.2 2.4 dB Output IP3 31 33 dBm Output P1dB 17.5 18.5 dBm Current 44 54 Device Voltage 2.3 2/9 Max 64 mA +3 V Pin Configuration Pin Description 1, 2, 4, 5 Ground 3 RF_IN 6 RF_OUT & Bias ASB Inc. Simplified Outline 1 2 3 [email protected] 6 5 4 July 2014 ASF133 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +25 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 110 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 500 ~ 1000 V MM Class A Voltage Level: <200 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/9 ASB Inc. [email protected] July 2014 ASF133 3. Application: 50 ~ 1000 MHz (IF, Vsupply = +3 V) 3.1 Application Circuit & Evaluation Board Vdevice = +3 V C4 C3 L1 C2 RF OUT C1 RF IN ASF133 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2 Bill of Material 4/9 Symbol Value Size Description Manufacturer ASF133 - - MMIC Amplifier ASB C1, C2 1 nF 0603 DC blocking capacitor Murata C3 100 pF 0603 Bypass capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 680 nH 0603 RF choke inductor Samsung ASB Inc. [email protected] July 2014 ASF133 3.2 Performance Table Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 MHz Gain 21.8 21.8 21.6 21.3 20.0 dB S11 -18.0 -20.0 -18.0 -15.5 -10.0 dB S22 -21.0 -20.5 -19.0 -16.5 -10.0 dB Noise Figure 2.1 2.2 2.3 2.3 2.4 dB Output IP31) 33 33 34 32 30 dBm Output P1dB 18.0 18.5 18.5 18.5 17.5 dBm Current 54 mA Device Voltage +3 V 1) OIP3 is measured with two tones at the output power of +3 dBm/tone separated by 1 MHz. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S11 S22 S12 K 0 5/9 200 ASB Inc. 400 600 Frequency (MHz) [email protected] 800 10 9 8 7 6 5 4 3 2 1 0 1000 Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 3.3 July 2014 ASF133 Plots of Noise Figure and Performances with Temperature 5 25 4 20 Gain (dB) NF (dB) 3.4 3 NF 2 15 10 -40 °C +25 °C 5 1 0 0 0 200 400 600 Frequency (MHz) 800 0 1000 0 0 -10 -10 S22 (dB) S11 (dB) +85 °C -40 °C 200 400 600 Frequency (MHz) 800 -40 °C -20 -20 1000 +25 °C +25 °C +85 °C +85 °C -30 -30 0 200 400 600 Frequency (MHz) 800 0 1000 65 30 60 25 200 400 600 Frequency (MHz) 800 1000 Gain (dB) Current (mA) Frequency = 150 MHz 55 50 15 10 45 5 40 0 -60 6/9 20 -40 -20 0 20 40 Temperature (°C) 60 80 100 ASB Inc. -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 July 2014 100 ASF133 5 22 Frequency = 150 MHz Frequency = 150 MHz 20 P1dB (dBm) NF (dB) 4 3 2 1 18 16 14 0 12 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 -60 -40 -20 0 20 40 Temperature (°C) 60 80 50 Output IP3 (dBm) Frequency = 150 MHz 40 30 -40 °C 20 +25 °C 10 +85 °C 0 0 7/9 2 4 6 8 10 Output tone power (dBm) 12 ASB Inc. 14 [email protected] July 2014 100 ASF133 4. Package Outline (SOT363, 2.1x2.0x1.0 mm) Symbols A A1 A2 b C D F E1 e e1 L Dimensions (In mm) MIN NOM 0.900 1.000 0.025 0.062 0.875 0.937 0.200 0.300 0.100 0.125 1.900 2.000 1.150 1.250 2.000 2.100 0.65BSC 1.30BSC 0.425REF MAX 1.10 0.10 1.00 0.40 0.15 2.10 1.35 2.20 5. Surface Mount Recommendation (In mm) 1.48 NOTE 0.30 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 0.25 0.30 1.23 2. Recommend is that the ground via holes be placed on the bottom of the ground leads and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 8/9 0.50 1.75 0.40 1.33 0.42 ASB Inc. [email protected] July 2014 ASF133 6. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) 9/9 ASB Inc. [email protected] July 2014