Kersemi MAC15SM Sensitive gate triacs silicon bidirectional thyristor Datasheet

MAC15SD, MAC15SM,
MAC15SN
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
• Sensitive Gate allows Triggering by Microcontrollers and other
Logic Circuits
• High Immunity to dv/dt - 25 V/s minimum at 110°C
• High Commutating di/dt - 8.0 A/ms minimum at 110°C
• Maximum Values of IGT, VGT and IH Specified for Ease of Design
• On-State Current Rating of 15 A RMS at 70°C
• High Surge Current Capability - 120 A
• Blocking Voltage to 800 V
• Rugged, Economical TO220AB Package
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC15SD, Date Code
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TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
4
MAC15xx
ALYWW
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 110°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MAC15SD
MAC15SM
MAC15SN
VDRM,
VRRM
On-State RMS Current
(Full Cycle Sine Wave, 60Hz,
TJ = 70°C)
IT(RMS)
15
A
ITSM
120
A
I2t
60
A2s
PGM
20
W
PG(AV)
0.5
Peak Non-repetitive Surge Current
(One Full Cycle Sine Wave,
60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 s, TC = 70°C)
Average Gate Power
(t = 8.3 ms, TC = 70°C)
Value
Unit
V
400
600
800
1
2
3
TO-220AB
CASE 221A
Style 4
W
Operating Junction Temperature Range
TJ
- 40 to
+110
°C
Storage Temperature Range
Tstg
- 40 to
+150
°C
1
xx
A
L
Y
WW
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC15SD
TO220AB
50 Units/Rail
MAC15SM
TO220AB
50 Units/Rail
MAC15SN
TO220AB
50 Units/Rail
MAC15SD, MAC15SM, MAC15SN
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
°C/W
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
2.0
62.5
TL
260
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Symbol
Characteristic
Min
Typ
Max
-
-
0.01
2.0
-
-
1.8
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage(1) (ITM = 21A)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IGT
Hold Current (VD = 12 V, Gate Open, Initiating Current = 150mA)
IH
Latching Current (VD = 24V, IG = 5mA)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IL
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
V
mA
-
2.0
3.0
3.0
5.0
5.0
5.0
-
3.0
10
-
5.0
10
5.0
15
20
15
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
(di/dt)c
8.0
10
-
A/ms
dv/dt
25
75
-
V/s
mA
mA
VGT
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10V/sec,
Gate Open, TJ = 110°C, f= 500Hz, Snubber: CS = 0.01 F, RS =15,
see Figure 15.)
Critical Rate of Rise of Off-State Voltage
(VD = Rate VDRM, Exponential Waveform, RGK = 510, TJ = 110°C)
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MAC15SD, MAC15SM, MAC15SN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 -
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(-) IGT
GATE
MT1
MT1
REF
REF
IGT -
+ IGT
(-) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
(-) MT2
Quadrant IV
(+) IGT
GATE
(-) IGT
GATE
MT1
MT1
REF
REF
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
110
100
= 30 and 60°
90
80
= CONDUCTION ANGLE
120°
70
180°
60
0
2
4
6
8
10
12
IT(RMS), RMS ON−STATE CURRENT (AMPS)
14
DC
16
P(AV), AVERAGE POWER DISSIPATION (WATTS)
T C , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
MAC15SD, MAC15SM, MAC15SN
25
DC
20
60°
10
= 30°
5
0
0
Maximum @
TJ = 110°C
0.1
0.5
1
1.5
2
2.5
3
3.5
4
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
4.5
R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
I T, INSTANTANOUS ON−STATE CURRENT (AMPS)
Maximum @
TJ = 25 °C
1
2
16
ZJC(t) = RJC(t) r(t)
0.1
0.01
0.1
1
10
100
t, TIME (ms)
110 4
1000
Figure 4. Transient Thermal Response
7
9
6
8
I L , LATCHING CURRENT (mA)
I H , HOLDING CURRENT (mA)
14
1
Figure 3. On-State Characteristics
5
MT2 NEGATIVE
4
3
MT2 POSITIVE
2
1
−40
4
6
8
10
12
IT(RMS), RMS ON−STATE CURRENT (AMPS)
Figure 2. Maximum On-State Power Dissipation
Typical @ TJ = 25 °C
10
90°
= CONDUCTION ANGLE
15
Figure 1. RMS Current Derating
100
180°
120°
7
Q1
6
5
Q3
4
3
−25
−10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
95
2
−40
110
−25
−10
5
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current Versus
Junction Temperature
Figure 6. Typical Latching Current Versus
Junction Temperature
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4
110
MAC15SD, MAC15SM, MAC15SN
0.9
V GT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
7
6
5
Q3
4
3
Q2
2
Q1
1
0
−40
−25
−10
5
20
35
50
65
TJ, JUNCTION TEMPERATURE (°C)
80
95
0.8
0.7
Q3
0.6
0.5
Q2
0.4
0.3
−40
110
Q1
−25
Figure 7. Typical Gate Trigger Current
Versus Junction Temperature
5
20
35
50
65
TJ, JUNCTION TEMPERATURE (°C)
80
95
110
Figure 8. Typical Gate Trigger Voltage
Versus Junction Temperature
110
140
TJ = 110°C
VPK = 400V
TJ = 100°C
100
STATIC dv/dt (V/S)
120
STATIC dv/dt (V/S)
−10
600V
100
800V
90
110°C
80
70
80
120°C
60
RG − MT1 = 510
60
100
200
300
400
500
600
700
800
RGK, GATE−MT1 RESISTANCE (OHMS)
900
1000
50
400
Figure 9. Typical Exponential Static dv/dt
Versus Gate-MT1 Resistance, MT2(+)
100
160
VPK = 400V
STATIC dv/dt (V/S)
STATIC dv/dt (V/S)
180
80
600V
70
800V
60
RG − MT1 = 510
110
115
TJ, Junction Temperature (°C)
700
750
800
TJ = 100°C
140
120
110°C
100
80
120°C
RG − MT1 = 510
40
105
550
600
650
VPK, Peak Voltage (Volts)
60
50
40
100
500
Figure 10. Typical Exponential Static dv/dt
Versus Peak Voltage, MT2(+)
110
90
450
120
20
125
Figure 11. Typical Exponential Static dv/dt
Versus Junction Temperature, MT2(+)
400
450
500
550
600
650
VPK, Peak Voltage (Volts)
700
750
Figure 12. Typical Exponential Static dv/dt
Versus Peak Voltage, MT2()
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5
800
(dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/s)
MAC15SD, MAC15SM, MAC15SN
200
100
600V
VPK = 400V
100
800V
50
RG − MT1 = 510
0
100
105
110
115
TJ, Junction Temperature (°C)
120
125
Figure 13. Typical Exponential Static dv/dt
Versus Junction Temperature, MT2()
90°C
10
100°C
f=
1
2 tw
tw
(di/dt)c =
VDRM
6f ITM
1000
CHARGE
1
5
10
15
20
25
(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 14. Critical Rate of Rise of
Commutating Voltage
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON−POLAR
CL
110°C
1
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER CONTROL
STATIC dv/dt (V/S)
150
RS
−
CS
MT2
1N914 51 ADJUST FOR +
di/dt(c)
200 V
MT1
G
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 15. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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6
MAC15SD, MAC15SM, MAC15SN
PACKAGE DIMENSIONS
TO-220AB
CASE 221A-09
ISSUE AA
-TC
F
B
SEATING
PLANE
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 4:
PIN 1.
2.
3.
4.
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7
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
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