ON NDDL01N60Z N-channel power mosfet Datasheet

NDDL01N60Z, NDTL01N60Z
N-Channel Power MOSFET
600 V, 15 W
Features
•
•
•
•
100% Avalanche Tested
Gate Charge Minimized
Zener−protected
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
600 V
15 W @ 10 V
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
NDD
NDT
Unit
Drain−to−Source Voltage
VDSS
600
V
Gate−to−Source Voltage
VGS
±30
V
Continuous Drain Current
Steady State, TC = 25°C (Note 1)
ID
0.8
0.25
A
Continuous Drain Current
Steady State, TC = 100°C (Note 1)
ID
0.5
0.15
A
Power Dissipation
Steady State, TC = 25°C
PD
26
2
W
Pulsed Drain Current, tp = 10 ms
IDM
G (1)
2.5
A
IS
Single Pulse Drain−to−Source
Avalanche Energy (ID = 0.8 A)
EAS
Peak Diode Recovery (Note 2)
dv/dt
4.5
V/ns
Lead Temperature for Soldering
Leads
TL
260
°C
Operating Junction and Storage
Temperature
TJ, TSTG
−55 to +150
°C
1.7
A
12
4
mJ
12
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. IS = 1.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS
THERMAL RESISTANCE
Parameter
Junction−to−Ambient
D (2, 4)
S (3)
3.4
Source Current (Body Diode)
Symbol
Value
Unit
NDDL1N60Z
RqJC
4.8
°C/W
(Note 4) NDDL1N60Z
(Note 3) NDDL1N60Z−1
(Note 4) NDTL1N60Z
(Note 5) NDTL1N60Z
RqJA
42
96
62
151
°C/W
Junction−to−Case (Drain)
N−Channel MOSFET
3
SOT−223
CASE 318E
STYLE 3
4
4
1 2
1
3
DPAK
CASE 369C
STYLE 2
2
3
IPAK
CASE 369D
STYLE 2
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 3 of this data sheet.
3. Insertion mounted.
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 0
1
Publication Order Number:
NDDL01N60Z/D
NDDL01N60Z, NDTL01N60Z
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA
600
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = 1 mA
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
V
610
mV/°C
TJ = 25°C
1
TJ = 125°C
50
IGSS
VGS = ±20 V
±100
VGS(TH)
VDS = VGS, ID = 50 mA
mA
nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
3
4.0
4.5
VGS(TH)/TJ
Static Drain-to-Source On Resistance
RDS(on)
VGS = 10 V, ID = 0.4 A
12.2
gFS
VDS = 15 V, ID = 0.4 A
0.7
S
92
pF
Forward Transconductance
9.6
V
Negative Threshold Temperature Coefficient
mV/°C
15
W
CHARGES, CAPACITANCES & GATE RESISTANCES
Input Capacitance (Note 7)
Ciss
Output Capacitance (Note 7)
Coss
Reverse Transfer Capacitance (Note 7)
Crss
Effective output capacitance, energy
related (Note 9)
Co(er)
Effective output capacitance, time
related (Note 10)
Co(tr)
VDS = 25 V, VGS = 0 V, f = 1 MHz
13
3
VGS = 0 V, VDS = 0 to 480 V
ID = constant, VGS = 0 V,
VDS = 0 to 480 V
pF
5.5
8.1
nC
Total Gate Charge (Note 7)
Qg
4.9
Gate-to-Source Charge (Note 7)
Qgs
1.2
Gate-to-Drain Charge (Note 7)
Qgd
Plateau Voltage
VGP
5.8
V
Gate Resistance
Rg
6.6
W
td(on)
10
ns
VDS = 300 V, ID = 0.4 A, VGS = 10 V
2.4
SWITCHING CHARACTERISTICS (Note 8)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
tr
td(off)
Fall Time
VDD = 300 V, ID = 0.4 A,
VGS = 10 V, RG = 0 W
tf
5
13
18
DRAIN−SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
Qrr
IS = 0.4 A, VGS = 0 V
TJ = 25°C
TJ = 100°C
0.8
V
0.7
183
VGS = 0 V, VDD = 30 V
IS = 1 A, di/dt = 100 A/ms
1.2
ns
33
150
255
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
9. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
10. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
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2
NDDL01N60Z, NDTL01N60Z
MARKING DIAGRAMS
4
Drain
YWW
L1N
60ZG
YWW
L1N
60ZG
4
Drain
Drain
4
1 2 3
Gate Drain Source
2
1 Drain 3
Gate Source
AYW
1N60ZG
G
1
2
3
Gate Drain Source
IPAK
DPAK
SOT−223
A
= Assembly Location
Y
= Year
W, WW = Work Week
L1N60Z, 1N60Z = Specific Device Codes
G or G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
NDDL01N60Z−1G
IPAK
(Pb-Free, Halogen-Free)
75 Units / Rail
NDDL01N60ZT4G
DPAK
(Pb-Free, Halogen-Free)
2500 / Tape & Reel
NDTL01N60ZT1G
SOT−223
(Pb-Free, Halogen-Free)
1000 / Tape & Reel
NDTL01N60ZT3G
SOT−223
(Pb-Free, Halogen-Free)
4000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NDDL01N60Z, NDTL01N60Z
TYPICAL CHARACTERISTICS
1.4
1.4
VGS = 10 V to 7.0 V
1.0
VGS = 6.5 V
0.8
VGS = 6.0 V
0.6
0.4
VGS = 5.5 V
VGS = 5.0 V
0
TJ = 25°C
0.8
0.6
TJ = 150°C
0.4
5
10
15
20
25
2
30
6
5
8
7
9
10
1.2
1.4
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 0.4 A
21
19
17
15
13
11
5
6
7
8
9
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.6
ID = 0.4 A
VGS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
−25
0
25
50
75
100
125
150
BVDSS, NORMALIZED BREAKDOWN VOLTAGE
VGS, GATE VOLTAGE (V)
0.6
0.4
−50
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
23
2.2
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
25
2.4
TJ = −55°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.0
0.2
0.2
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
VDS = 15 V
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.2
25
23
TJ = 25°C
VGS = 10 V
21
19
17
15
13
11
0
0.2
0.4
1.0
0.8
0.6
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.125
1.100
ID = 1 mA
1.075
1.050
1.025
1.000
0.975
0.950
0.925
0.900
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
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4
150
NDDL01N60Z, NDTL01N60Z
10,000
1.15
ID = 50 mA
1.10
1.05
IDSS, LEAKAGE (nA)
1.00
0.95
0.90
0.85
0.80
0.70
0.65
−50
100
TJ = 125°C
TJ = 100°C
10
1
−25
0
25
50
75
100
0
150
125
100
200
300
400
500
600
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Threshold Voltage Variation with
Temperature
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
12
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 150°C
0.75
1000
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
100
COSS
10
CRSS
0.1
1
10
100
11
300
250
VGS
200
QGD
QGS
6
5
150
4
3
VDS = 300 V
TJ = 25°C
ID = 0.4 A
2
1
0
100
50
0
0
1000
350
QT
VDS
10
9
8
7
1
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 9. Capacitance Variation
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
100
TJ = 100°C
IS, SOURCE CURRENT (A)
VGS = 10 V
VDD = 300 V
ID = 0.8 A
td(off)
t, TIME (ns)
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS(th), NORMALIZED THRESHOLD VOLTAGE
TYPICAL CHARACTERISTICS
tf
td(on)
10
tr
TJ = 125°C
1
0.1
TJ = 150°C
TJ = 25°C
0.01
TJ = −55°C
0.001
1
0.1
1
10
0.2 0.3
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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NDDL01N60Z, NDTL01N60Z
TYPICAL CHARACTERISTICS
10
VGS ≤ 30 V
Single Pulse
TC = 25°C
1
10 ms
100 ms
1 ms
10 ms
dc
0.1
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.001
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
VGS ≤ 30 V
Single Pulse
TC = 25°C
1
10 ms
100 ms
1 ms
10 ms
0.1
dc
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.001
0.1
1
10
100
1000
0.1
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area for NDDL01N60Z
Figure 14. Maximum Rated Forward Biased
Safe Operating Area for NDTL01N60Z
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE (°C/W)
10
Duty Cycle = 0.5
RqJC steady state = 4.8°C/W
0.20
1
0.10
0.05
0.02
0.01
0.1
Single Pulse
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
t, TIME (s)
Figure 15. Thermal Impedance (Junction−to−Case) for NDDL01N60Z
100
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE (°C/W)
Duty Cycle = 0.5
0.20
10 0.10
0.05
RqJA steady state = 62°C/W
0.02
1
0.01
0.1
Single Pulse
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
t, TIME (s)
Figure 16. Thermal Impedance (Junction−to−Ambient) for NDTL01N60Z
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6
1E+02
1E+03
NDDL01N60Z, NDTL01N60Z
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
D
b1
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
4
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
q
C
q
A
L
STYLE 3:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
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7
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
mm Ǔ
ǒinches
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
NDDL01N60Z, NDTL01N60Z
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NDDL01N60Z, NDTL01N60Z
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NDDL01N60Z/D