DMP4013LFG 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Features and Benefits V(BR)DSS RDS(ON) max -40V 13mΩ @ VGS = -10V 18mΩ @ VGS = -4.5V ID max TA = +25°C -10.3A -8.8A • Low RDS(ON) – ensures on state losses are minimized. • Small form factor thermally efficient package enables higher density end products. • Occupies 33% of the board area occupied by SO-8, enabling smaller end product. • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • • ® Case: POWERDI 3333-8 (Type B) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. • Moisture Sensitivity: Level 1 per J-STD-020 • Backlighting • Terminal Connections Indicator: See Diagram • Power Management Functions • • DC-DC Converters Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (Approximate) POWERDI3333-8 S D Pin 1 S S G G D D D D Bottom View S Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP4013LFG-7 DMP4013LFG-13 Notes: Case POWERDI3333-8 (Type B) POWERDI3333-8 (Type B) Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information POWERDI3333-8 YYWW ADVANCE INFORMATION Product Summary P13= Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 13 = 2013) WW = Week Code (01 ~ 53) P13 POWERDI is a registered trademark of Diodes Incorporated. DMP4013LFG Document number: DS37205 Rev. 2 - 2 1 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP4013LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V VDSS Value -40 Units V VGSS ±20 V Steady State TA = +25°C TA = +70°C ID -10.3 -8.3 A t<10s TA = +25°C TA = +70°C ID -13.7 -11 A A IDM 80 Maximum Continuous Body Diode Forward Current (Note 6) IS 2.6 A Avalanche Current, L = 0.1mH IAS 34 A Avalanche Energy, L = 0.1mH EAS 58 mJ Pulsed Drain Current (10µs pulse, duty cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Units W RθJC Value 1 123 69 2.1 60 34 3.3 TJ, TSTG -55 to +150 °C Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RθJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range °C/W W °C/W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Symbol Min BVDSS IDSS IGSS VGS(th) RDS (ON) VSD Typ Max -40 — — V VGS = 0V, ID = -250μA — — -1 µA VDS = -40V, VGS = 0V — — ±100 nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = -250μA -1 — -3 — — 13 — — 18 — -0.7 -1.2 Unit mΩ V Ciss — 3426 — pF Output Capacitance Coss — 283 — pF Reverse Transfer Capacitance Crss — pF Gate Resistance Rg 235 4.7 — — — Ω Total Gate Charge (VGS = -4.5V) Qg — 32.5 — nC Total Gate Charge (VGS = -10V) Gate-Source Charge Qg — 68.6 — nC Qgs — 8.2 — nC Gate-Drain Charge Qgd — 9.9 — nC Turn-On Delay Time tD(on) — 5.3 — ns Turn-On Rise Time tr — 20 — ns Turn-Off Delay Time tD(off) — 126 — ns Turn-Off Fall Time tf — 83 — ns Body Diode Reverse Recovery Time trr — 19.5 — nS Body Diode Reverse Recovery Charge Qrr — 9.8 — nC Notes: Test Condition VGS = -10V, ID = -10A VGS = -4.5V, ID = -8A VGS = 0V, IS = -1A VDS = -20V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -20V, ID = -10A VDD = -20V, VGEN = -10V, RG = 3Ω, ID = -10A IF = -10A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMP4013LFG Document number: DS37205 Rev. 2 - 2 2 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP4013LFG 30.0 25 VGS = -4.0V VGS = -2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = -5.0V VGS = -4.5V 25.0 VGS = -3.5V 20.0 VGS = -3.0V 15.0 10.0 5.0 20 15 10 TA = 150°C 5 VGS = -2.0V TA = 125°C T A = 85°C TA = 25°C TA = -55°C 0 1 2 3 4 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.016 0.014 VGS = -4.5V 0.012 VGS = -10V 0.01 0.008 0.006 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.5 5 3 ID = 10A 0.05 ID = 8A 0.04 0.03 0.02 0.01 30 0.02 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 1.8 VGS = -10V 0.018 TA = 150°C T A = 125 °C 0.016 0.014 TA = 85°C 0.012 TA = 25°C 0.01 0.008 TA = -55°C 0.006 0.004 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION 30 VGS = -10V 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 30 VGS = -10V ID = -10A 1.6 1.4 VGS = -4.5V ID = -8A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMP4013LFG Document number: DS37205 Rev. 2 - 2 3 of 7 www.diodes.com January 2015 © Diodes Incorporated 1.8 0.02 VGS = -4.5V ID = -8A 0.018 0.016 0.014 VGS = -10V ID = -10A 0.012 0.01 0.008 0.006 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.022 1.6 -ID = 250µA 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 30 -I D = 1mA 1.4 0.004 -50 10000 CT, JUNCTION CAPACITANCE (pF) f = 1MHz IS, SOURCE CURRENT (A) 25 20 15 TA= 150°C TA= 85°C 10 TA= 125°C 5 0 TA= 25°C TA= -55°C 0 Ciss 1000 Coss Crss 100 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 10 RDS(on) Limited 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP4013LFG 6 VDS = -20V ID = -10A 4 2 0 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0 10 20 30 40 50 60 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics 70 0.01 0.1 PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMP4013LFG Document number: DS37205 Rev. 2 - 2 4 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP4013LFG r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 119°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 1E-04 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 100 1000 POWERDI is a registered trademark of Diodes Incorporated. DMP4013LFG Document number: DS37205 Rev. 2 - 2 5 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP4013LFG Package Outline Dimensions ADVANCE INFORMATION Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. ® A POWERDI 3333-8 Type B Dim Min Max Typ A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − D 3.25 3.35 3.30 D1 2.55 2.66 2.61 D2 1.74 1.84 1.79 e 0.65 − − E 3.25 3.35 3.30 E1 1.14 1.24 1.19 E2 0.61 0.71 0.66 K1 0.41 − − K2 0.38 − − L 0.35 0.45 0.40 L1 0.25 − − Z 0.515 − − All Dimensions in mm A3 A1 D D1 L (5x) K1 E1 E b2 (4x) K2 D2 E2 L1 (2x) Z (4x) e b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 G X2 (3x) Dimensions C G X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y1 Y2 X3 Y3 Y4 X4 Y5 Y6 Y (5x) X (5x) C Value (in mm) 0.650 0.230 0.420 2.370 0.420 1.890 2.710 0.700 0.400 1.160 1.850 0.405 1.295 3.700 POWERDI is a registered trademark of Diodes Incorporated. DMP4013LFG Document number: DS37205 Rev. 2 - 2 6 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP4013LFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMP4013LFG Document number: DS37205 Rev. 2 - 2 7 of 7 www.diodes.com January 2015 © Diodes Incorporated