TYPICAL PERFORMANCE CURVES
APT150GN60B2(G)
600V
APT150GN60B2(G)
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
Parameter
APT150GN60J
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 110°C
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
220
123
2
Amps
450
Switching Safe Operating Area @ TJ = 175°C
450A @ 600V
Total Power Dissipation
536
Operating and Storage Junction Temperature Range
Watts
-55 to 175
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
(VCE = VGE, I C = 2400μA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
TYP
MAX
5.0
5.8
6.5
1.05
1.45
1.85
25
3
600
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
μA
1000
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Volts
1.65
3
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Units
nA
Ω
8-2008
MIN
Rev A
Characteristic / Test Conditions
050-7632
Symbol
APT150GN60B2(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Total Gate Charge
4
Gate-Emitter Charge
300
Gate Charge
9.5
VGE = 15V
970
VCE = 300V
65
I C = 150A
510
15V, L = 100μH,VCE = 600V
110
Turn-off Delay Time
VGE = 15V
Current Fall Time
I C = 150A
430
Eoff
Turn-off Switching Energy
td(on)
Turn-on Delay Time
44
VCC = 400V
110
Turn-off Delay Time
VGE = 15V
Current Fall Time
I C = 150A
480
Turn-off Switching Energy
μJ
65
ns
95
RG = 1.0Ω 8
54
Turn-on Switching Energy (Diode)
ns
4295
Current Rise Time
Eon2
nC
8615
Inductive Switching (125°C)
Turn-on Switching Energy
V
8810
TJ = +25°C
7
Eon1
pF
60
RG = 1.0Ω 8
6
UNIT
A
Current Rise Time
5
MAX
450
44
Turn-on Switching Energy (Diode)
Eoff
350
f = 1 MHz
VCC = 400V
Eon2
tf
VGE = 0V, VCE = 25V
Inductive Switching (25°C)
Turn-on Switching Energy
td(off)
9200
TJ = 175°C, R G = 4.3Ω 8, VGE =
Turn-on Delay Time
Eon1
tr
TYP
Capacitance
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
MIN
8880
TJ = +125°C
μJ
9735
67
5460
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
R
R
θJC
θJC
VIsolation
WT
1
Min
Typ
Max
Unit
Junction to Case (IGBT)
-
-
0.28
°C/W
Junction to Case (DIODE)
-
-
N/A
6.1
-
RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
2500
-
gm
Continuous current limited by case temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature.
3 For Combi devices, Ices includes both IGBT and FRED leakages
050-7632
Rev A
8-2008
4 See MIL-STD-750 Method 3471.
5 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
6 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
7 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
8 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
= 15V
TJ = -55°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
250
TJ = 125°C
200
TJ = 175°C
150
100
50
0
150
100
50
0
0
10V
200
150
9V
100
8V
50
7V
FIGURE 2, Output Characteristics (TJ = 125°C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ = 175°C
200
250
16
250μs PULSE
TEST<0.5 % DUTY
CYCLE
250
11V
0
5
10
15
20
25
30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
300
300
0
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
350
12, 13 &15V
350
300
J
VCE = 120V
12
VCE = 300V
10
VCE = 480V
8
6
4
2
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 150A
C
T = 25°C
14
0
200
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
3.5
IC = 300A
3.0
2.5
2.0
IC = 150A
1.5
IC = 75A
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.05
3.0
2.5
IC = 300A
2.0
IC = 150A
1.5
IC = 75A
1.0
0.5
0
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75 100 125 150 175
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
300
1.15
1.10
1200
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4.0
400
600
800 1000
GATE CHARGE (nC)
250
200
150
100
50
0
-50 -25
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
8-2008
GE
Rev A
V
APT150GN60B2(G)
400
050-7632
350
APT150GN60B2(G)
600
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
60
50
VGE = 15V
40
30
20
VCE = 400V
10 T = 25°C, or 125°C
J
RG = 1.0Ω
L = 100μH
0
L = 100μH
160
TJ = 125°C, VGE = 15V
140
TJ = 25 or 125°C,VGE = 15V
250
tf, FALL TIME (ns)
tr, RISE TIME (ns)
100 VCE = 400V
RG = 1.0Ω
180
RG = 1.0Ω, L = 100μH, VCE = 400V
200
150
120
100
80
60
TJ = 25°C, VGE = 15V
40
50
20
0
0
40,000
18,000
V
= 400V
CE
V
= +15V
GE
R = 1.0Ω
35,000
G
30,000
TJ = 125°C
25,000
20,000
15,000
10,000
TJ = 25°C
5,000
30
70
110 150 190 230 270 310
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
Eon2,300A
50,000
40,000
30,000
Eoff,300A
Eon2,150A
10,000
Eon2,75A
0
Eoff,75A
0
12,000
TJ = 125°C
10,000
8,000
6,000
4,000
TJ = 25°C
2,000
30
70
110 150 190 230 270 310
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
Eoff,150A
5
10
15
20
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (μJ)
J
20,000
G
14,000
40,000
V
= 400V
CE
V
= +15V
GE
T = 125°C
60,000
V
= 400V
CE
V
= +15V
GE
R = 1.0Ω
16,000
0
0
70,000
RG = 1.0Ω, L = 100μH, VCE = 400V
30
70
110 150 190 230 270 310
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
EOFF, TURN OFF ENERGY LOSS (μJ)
EON2, TURN ON ENERGY LOSS (μJ)
200
400
30
70
110 150 190 230 270 310
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
SWITCHING ENERGY LOSSES (μJ)
VGE =15V,TJ=25°C
30
70
110 150 190 230 270 310
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
8-2008
VGE =15V,TJ=125°C
300
0
300
Rev A
400
30
70
110 150 190 230 270 310
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
350
050-7632
500
V
= 400V
CE
V
= +15V
GE
R = 1.0Ω
35,000
Eon2,300A
G
30,000
25,000
20,000
Eoff,300A
15,000
Eon2,150A
10,000
Eoff,150A
5,000
0
Eoff,75A
0
Eon2,75A
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
20,000
IC, COLLECTOR CURRENT (A)
Cies
10,000
500
P
C, CAPACITANCE ( F)
APT150GN60B2(G)
500
100
50
Coes
400
300
200
100
Cres
0
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
D = 0.9
0.25
0.20
0.7
0.15
0.5
Note:
0.10
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.30
0.3
t1
t2
0.05
0
0.1
t
SINGLE PULSE
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.00770
Power
(watts)
0.184
0.300
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5
1
T = 125°C
J
T = 75°C
C
D = 50 %
= 400V
V
CE
R = 1.0Ω
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
G
30
50
70 90 110 130 150 170 190
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
8-2008
0.0964
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
Rev A
Junction
temp. (°C)
10
050-7632
RC MODEL
FMAX, OPERATING FREQUENCY (kHz)
50
APT150GN60B2(G)
Gate Voltage
10%
APT100DQ60
TJ = 125°C
td(on)
tr
IC
V CC
Collector Current
90%
V CE
5%
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
td(off)
TJ = 125°C
90%
tf
Collector Voltage
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX® Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
4.50
(.177) Max.
1.65 (.065)
2.13 (.084)
050-7632
Rev A
8-2008
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.