isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJL21194G DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJL21194G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A 1.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A; IB= -3.2A 4.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 5V 2.2 V ICEO Collector Cutoff Current VCE= 200V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 8A; VCE= 5V 25 hFE-2 DC Current Gain IC= 16A; VCE= 5V 8 COB Output Capacitance IE=0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC=1A ; VCE= 10V 4 MHz VCE= 50V,t= 1.0s 4 A Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 80V,t= 1.0s 2.25 A isc website：www.iscsemi.com CONDITIONS 2 MIN TYP. MAX UNIT 250 V 75 500 pF isc & iscsemi is registered trademark