NCE Power NCE0106Z Nce n-channel enhancement mode power mosfet Datasheet

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NCE0106Z
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
D
Description
The NCE0106Z uses advanced trench technology and
G
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
S
General Features
Schematic diagram
● VDS = 100V,ID = 6A
RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible power supply
TO-92 view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
0106Z
NCE0106Z
TO-92
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
ID
6
A
IDM
24
A
PD
3
W
TJ,TSTG
-55 To 150
℃
RθJA
41.7
℃/W
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
100
110
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
-
-
1
μA
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Off Characteristics
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Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.2
1.8
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5A
-
110
140
mΩ
gFS
VDS=5V,ID=2.9A
-
8
-
S
-
690
-
PF
-
120
-
PF
-
90
-
PF
-
11
-
nS
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=25V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=30V,ID=2A,RL=15Ω
-
7.4
-
nS
td(off)
VGS=10V,RG=2.5Ω
-
35
-
nS
-
9.1
-
nS
-
15.5
-
3.2
-
nC
-
4.7
-
nC
-
-
1.2
V
-
-
6
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=30V,ID=3A,
VGS=10V
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
IS
VGS=0V,IS=6A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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NCE0106Z
Test Circuit
1)EAS test circuit
2)Gate charge test circuit
3)Switch Time Test Circuit
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Typical Electrical and Thermal Characteristics (curves)
Figure1. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure5. Static drain-source on resistance
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Figure2. Safe operating area
Figure4. Transfer characteristics
Figure6. RDS(ON) vs Junction Temperature
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Figure7. BVDSS vs Junction Temperature
Figure9. Gate charge waveforms
Figure8. VGS(th) vs Junction Temperature
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
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TO-92 Package Information
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
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