Pan Jit MBTA05 Npn and pnp high voltage transistor Datasheet

MMBTA05,MMBTA06,MMBTA55,MMBTA56
NPN AND PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE 60~80 Volts
POWER
225 mWatts
FEATURES
• NPN and PNP silicon, planar design
• Collector current I C = 100mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking :
M M B TA 0 5 = B 0 5
M M B TA 0 6 = B 0 6
M M B TA 5 5 = B 5 5
M M B TA 5 6 = B 5 6
MAXIMUM RATINGS
PA RA M E TE R
S YM B O L
M M B TA 0 5 M M B TA 5 5 M M B TA 0 6 M M B TA 5 6 U N I T S
C o lle c to r-E mi tte r Vo lta g e
V CEO
60
80
V
C o lle c to r-B a s e Vo lta g e
V CBO
60
80
V
E mi tte r-B a s e Vo lta g e
V EBO
4 .0
V
IC
500
mA
C o l l e c t o r C ur r e nt - C o nt i nuo us
C i r c ui t F i g ur e
NP N
P NP
NP N
P NP
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board (Note 1)TA =25OC
Derate above 25 OC
Thermal Resistance , Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 2)TA =25OC
Derate above 25 OC
Thermal Resistance , Junction to Ambient
Junction and Storage Temperature
SYMBOL
MAX
UNIT
PD
225
1.8
mW
mW/OC
RθJA
556
PD
300
2.4
RθJA
417
O
TJ,TSTG
-55 to 150
O
PNP
O
C/W
mW
mW/OC
C
C
NPN
1.FR-4=70 x 60 x 1mm.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina
STAD-NOV.30.2005
PAGE . 1
MMBTA05,MMBTA06,MMBTA55,MMBTA56
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
CHARACTERISTIC
SYMBOL
MIN
MAX
UNIT
V(BR)CEO
60
80
-
V
V(BR)EBO
4.0
-
V
ICES
-
0.1
µA
ICBO
-
0.1
0.1
µA
100
100
-
-
0.25
V
-
1.2
V
100
-
MHz
OFF CHATACTERISTICS
Collector-Emitter Breakdown Voltage (Note 3)
(IC=1.0 mA , I B=0)
MMBTA05,MMBTA55
MMBTA06,MMBTA56
Emitter-Base Breakdown Voltage
(IE=100 µA , I C=0)
Collector Cutoff Current
(VCE=60V , IB=0)
Collector Cutoff Current
(VCB=60V , IE=0)
(VCB=80V , IE=0)
MMBTA05,MMBTA55
MMBTA06,MMBTA56
ON CHATACTERISTICS
DC Current Gain
(IC=10mA , VCE=1.0V)
(IC=100mA , VCE=1.0V)
hFE
Collector-Emitter Saturation Voltage
(IC=100mA , I B=10mA)
VCE(sat)
Base-Emitter On Voltage
(IC=100mA , VCE=1.0V)
VBE(on)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (Note 4)
(IC=10mA , VCE=2.0V , f=100MHz)
STAD-NOV.30.2005
fT
PAGE . 2
300
80
40
C, CAPACITANCE (pF)
200
100
70
50
3.0
5.0 7.0 10
20
30
50
70 100
t, TIME (ns)
4.0
0.1
200
0.2
0.5
1.0
2.0
5.0
10
20
Figure 2. Current–Gain — Bandwidth Product
Figure 3. Capacitance
50
100
400
TJ = 125°C
VCE = 1.0 V
ts
200
10
Cobo
VR, REVERSE VOLTAGE (VOLTS)
300
20
10
8.0
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
30
Cibo
20
6.0
30
2.0
100
70
50
TJ = 25°C
60
VCE = 2.0 V
TJ = 25°C
h FE , DC CURRENT GAIN
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
MMBTA05,MMBTA06,MMBTA55,MMBTA56
tf
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
5.0 7.0 10
tr
td @ VBE(off) = 0.5 V
20
30
50
70 100
200 300
200
-55°C
100
80
60
40
0.5
500
25°C
1.0
2.0 3.0 5.0
10
20 30
50
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
Figure 5. DC Current Gain
1.0
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
200 300 500
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
0.5
VCE(sat) @ IC/IB = 10
1.0
2.0
5.0
10
20
50
100
200
500
IC, COLLECTOR CURRENT (mA)
Figure 6. “ON” Voltages
STAD-NOV.30.2005
PAGE . 3
1.0
-0.8
R VB , TEMPERATURE COEFFICIENT (mV/° C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
MMBTA05,MMBTA06,MMBTA55,MMBTA56
TJ = 25°C
0.8
0.6
IC =
250 mA
IC =
100 mA
IC =
50 mA
-1.2
IC =
500 mA
-1.6
0.2
0
RVB for VBE
-2.0
0.4
IC =
10 mA
0.05
0.1
-2.4
0.2
0.5
1.0
2.0
5.0
10
20
50
-2.8
0.5
1.0
2.0
5.0
10
20
50
100
200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base–Emitter Temperature
Coefficient
STAD-NOV.30.2005
500
PAGE . 4
MMBTA05,MMBTA06,MMBTA55,MMBTA56
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-OCT.14.2005
PAGE . 5
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