Preliminary Data Sheet NP75N04YLG R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 40 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A) • Logic level drive type • Gate to Source ESD protection diode built in • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP75N04YLG-E1-AY *1 NP75N04YLG-E2-AY *1 Note: Lead Plating Pure Sn (Tin) Tape 2500 p/reel Packing Taping (E1 type) Taping (E2 type) Package 8-pin HSON *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 Channel Temperature Storage Temperature Repetitive Avalanche Current *3 Repetitive Avalanche Energy *3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±75 ±225 138 1.0 175 –55 to +175 35 123 Unit V V A A W W °C °C A mJ Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% *2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm) *3 Tch(peak) ≤ 150°C, RG = 25 Ω Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Rth(ch-C) Rth(ch-A) 1.09 150 °C/W °C/W Page 1 of 6 NP75N04YLG Preliminary Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note: Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr MIN. — — 1.5 40 — — — — — — — — — — — — — — TYP. — — 2.0 46 3.8 4.5 4300 400 250 22 17 40 11 77 20 25 0.9 34 MAX. 1 ±10 2.5 — 4.8 8.3 6450 600 450 44 41 140 27 116 — — 1.5 — Unit μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns Qrr — 34 — nC Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 5 V, ID = 38 A VGS = 10 V, ID = 38 A VGS = 4.5 V, ID = 38 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 38 A VGS = 10 V RG = 0 Ω VDD = 32 V VGS = 10 V ID = 75 A IF = 75 A, VGS = 0 V IF = 75 A, VGS = 0 V di/dt = 100 A/μs *1 Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω RL Wave Form RG PG. VDD VGS VGS VDD 0 VGS 10% 90% VDS 90% ID IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS VDD Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 2 of 6 NP75N04YLG Preliminary Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 160 PT - Total Power Disslpation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 140 120 100 80 60 40 20 0 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(Pulse) = 225 A RDS(ON) Limited (VGS=10 V) =1 00 μs Power Dissipation Limited =1 10 PW PW ms PW Secondary Breakdown Limited s 1 0m =1 ID - Drain Current - A 1000 TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 150°C/W 100 10 Rth(ch-C) = 1.09°C/W 1 0.1 Single pulse Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm) 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 3 of 6 NP75N04YLG Preliminary 100 200 10 ID - Drain Curent - A 250 150 100 50 0 0.2 0.4 0.6 0.8 1.0 TA = –55°C –25°C 25°C 75°C 125°C 175°C 1 0.1 0.01 VGS = 10 V Pulsed 0.001 1.2 VDS = 10 V Pulsed 0 1 2 3 4 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 |yfs| - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V 0 RDS(on) - Drain to Source On-State Resistance - mΩ FORWARD TRANSFER CHARACTERISTICS 2 1 VDS = VGS ID = 250 μA 0 –100 –50 0 50 100 150 200 100 TA = –55°C –25°C 25°C 75°C 125°C 175°C 10 VDS = 5 V Pulsed 1 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 9 8 7 VGS = 10V 4.5V 6 5 4 3 2 1 0 Pulsed 1 10 100 ID - Drain Current - A R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 9 ID = 15A 38A 75A 8 7 6 5 4 3 2 1 0 Pulsed 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 Preliminary DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 8 VGS = 10V 4.5V 7 6 5 4 3 2 ID = 38 A Pulsed 1 0 –100 –50 0 50 100 150 1000 Coss Crss VGS = 0 V f = 1 MHz 100 0.01 200 0.1 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 14 35 1000 100 td(off) td(on) tr 10 VDD = 20 V VGS = 10 V RG = 0 Ω 1 0.1 tf 1 10 12 30 VDD = 32 V 20 V 8V 25 10 20 8 15 6 10 4 VGS VDS 5 0 100 ID = 75 A 0 10 20 30 40 50 60 70 ID - Drain Current - A QG- Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 VGS = 0 V 10 1 Pulsed 0 0.2 0.4 0.6 0.8 1.0 VF(S-D) - Source to Drain Voltage - V R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 1.2 trr - Reverse Recovery Time - ns VGS = 10 V 0.1 2 0 80 100 1000 IF - Diode Forward Current - A Ciss VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF 10000 9 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ NP75N04YLG 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 IF - Drain Current - A Page 5 of 6 NP75N04YLG Preliminary Package Drawing (Unit: mm) 8-pin HSON (Mass: 0.128 g TYP.) Renesas Code: PLSN0008KA-A 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain Equivalent Circuit Drain Body Diode Gate Gate Protection Diode Source Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 6 of 6 Revision History NP75N04YLG Data Sheet Description Rev. 1.00 Date Mar 02, 2015 Page — Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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