AOSMD AO4914 Dual n-channel enhancement mode field effect transistor with schottky diode Datasheet

Rev 6: May 2005
AO4914
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
Features
Q1
The AO4914 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
AO4914 is Pb-free (meets ROHS & Sony 259
specifications). AO4914L is a Green Product ordering
option. AO4914 and AO4914L are electrically identical.
S2/A
G2
S1
G1
1
2
3
4
D2/K
D2/K
D1
D1
8
7
6
5
D2
Pulsed Drain Current B
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Parameter
Reverse Voltage
S2
PD
TJ, TSTG
B
TA=25°C
A
TA=70°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Q2
G1
S1
Max Q1
30
Max Q2
30
Units
V
±20
±20
V
8.5
6.6
8.5
6.6
A
30
30
2
2
1.28
-55 to 150
1.28
-55 to 150
Maximum Schottky
30
W
°C
Units
V
3
TA=25°C
TA=70°C
Pulsed Diode Forward Current
Power Dissipation
ID
IDM
Symbol
VDS
Continuous Forward
A
Current
A
G2
VGS
TA=25°C
TA=70°C
D1
K
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Continuous Drain
A
Current
VDS(V) = 30V
ID = 8.5A
<18mΩ
(VGS = 10V)
<28mΩ
(VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
Q1
SOIC-8
Gate-Source Voltage
Q2
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 18mΩ
RDS(ON) < 28mΩ
IF
2.2
IFM
20
PD
TJ, TSTG
2
1.28
-55 to 150
A
W
°C
AO4912, AO4912L
Parameter: Thermal Characteristics MOSFET Q1
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Symbol
Parameter: Thermal Characteristics MOSFET Q2
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Symbol
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
RθJA
RθJL
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
Typ
48
74
35
Max
62.5
110
40
Units
47.5
71
32
62.5
110
40
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
°C/W
°C/W
°C/W
AO4914, AO4914L
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Conditions
Min
Typ
Max
VR=30V
VR=30V, TJ=125°C
0.007
0.05
3.2
10
mA
VR=30V, TJ=150°C
12
20
100
nA
1.8
3
V
15.5
18
22.3
27
VGS=4.5V, ID=6A
23
28
mΩ
VDS=5V, ID=8.5A
23
0.5
V
3.5
A
1165
pF
ID=250µA, VGS=0V
30
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
VGS=10V, ID=8.5A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode + Schottky Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
IS
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance (FET + Schottky)
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
A
0.45
971
VGS=0V, VDS=15V, f=1MHz
190
0.7
mΩ
S
pF
110
VGS=0V, VDS=0V, f=1MHz
Units
pF
0.85
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19.2
23
nC
Qg(4.5V) Total Gate Charge
9.36
11.2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
2.6
nC
4.2
nC
5.2
7.5
4.4
6.5
ns
ns
17.3
26
ns
tf
Turn-Off Fall Time
3.3
5
ns
trr
Body Diode + Schottky Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
18.8
23
Qrr
Body Diode + Schottky Reverse Recovery Charge
IF=8.5A, dI/dt=100A/µs
9.2
11
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given
application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single
pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and
recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4914, AO4914L
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
4V
10V
25
16
VDS=5V
4.5V
3.5V
12
ID(A)
ID (A)
20
15
125°C
8
10
25°C
VGS=3V
4
5
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
1.6
VGS=10V
26
Normalized On-Resistance
VGS=4.5V
24
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
28
22
20
VGS=10V
18
16
14
0
5
10
15
ID=8.5A
1.4
VGS=4.5V
1.2
1
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
50
1.0E+01
1.0E+00
40
ID=8.5A
125°
1.0E-01
30
IS (A)
RDS(ON) (mΩ)
2.5
125°C
25°C
1.0E-02
1.0E-03
20
FET+SCHOTTKY
1.0E-04
25°C
1.0E-05
10
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note F)
1.0
AO4914, AO4914L
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=15V
ID=8.5A
1250
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1000
750
500
Coss FET+SCHOTTKY
250
Crss
0
0
0
4
8
12
16
0
20
5
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
100.0
RDS(ON)
limited
100µs
1ms
10.0
10µs
10ms
0.1s
1s
1.0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
40
Power (W)
ID (Amps)
10
30
20
10
10s
DC
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
40
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
T
100
1000
AO4914, AO4914L
Q2 Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=24V, VGS=0V
0.003
Gate-Body leakage current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
100
nA
3
V
15.5
18
22.3
27
VGS=4.5V, I D=6A
23
28
VDS=5V, ID=8.5A
23
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
µA
1.8
VGS=10V, I D=8.5A
Coss
1
5
Gate Threshold Voltage
Crss
Units
V
TJ=55°C
VGS(th)
IS
Max
30
IGSS
RDS(ON)
Typ
A
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, I D=8.5A
mΩ
S
0.75
1040
mΩ
1
V
3
A
1250
pF
180
pF
110
pF
0.85
Ω
19.2
23
nC
9.36
11.2
nC
0.7
2.6
nC
Qgd
Gate Drain Charge
4.2
tD(on)
Turn-On DelayTime
5.2
7.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
nC
ns
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
4.4
6.5
ns
17.3
26
ns
3.3
5
ns
16.7
21
6.7
10
ns
nC
trr
Body Diode Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge
IF=8.5A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4914, AO4914L
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
4V
10V
25
16
VDS=5V
4.5V
3.5V
12
ID(A)
ID (A)
20
15
125°C
8
10
25°C
VGS=3V
4
5
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
28
1.6
VGS=10V
26
Normalized On-Resistance
VGS=4.5V
24
RDS(ON) (mΩ)
2.5
22
20
VGS=10V
18
16
14
0
5
10
15
ID=8.5A
1.4
VGS=4.5V
1.2
1
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
50
1.0E+01
1.0E+00
ID=8.5A
1.0E-01
30
IS (A)
RDS(ON) (mΩ)
40
125°C
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4914, AO4914L
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=15V
ID=8.5A
1250
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1000
750
500
Coss
2
250
Crss
0
0
0
4
8
12
16
0
20
5
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
100.0
RDS(ON)
limited
100µs
1ms
10.0
10µs
10ms
0.1s
1s
1.0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
40
Power (W)
ID (Amps)
10
30
20
10
10s
DC
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
40
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
T
100
1000
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