Rev 6: May 2005 AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further AO4914 is Pb-free (meets ROHS & Sony 259 specifications). AO4914L is a Green Product ordering option. AO4914 and AO4914L are electrically identical. S2/A G2 S1 G1 1 2 3 4 D2/K D2/K D1 D1 8 7 6 5 D2 Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Parameter Reverse Voltage S2 PD TJ, TSTG B TA=25°C A TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Q2 G1 S1 Max Q1 30 Max Q2 30 Units V ±20 ±20 V 8.5 6.6 8.5 6.6 A 30 30 2 2 1.28 -55 to 150 1.28 -55 to 150 Maximum Schottky 30 W °C Units V 3 TA=25°C TA=70°C Pulsed Diode Forward Current Power Dissipation ID IDM Symbol VDS Continuous Forward A Current A G2 VGS TA=25°C TA=70°C D1 K Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Continuous Drain A Current VDS(V) = 30V ID = 8.5A <18mΩ (VGS = 10V) <28mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A Q1 SOIC-8 Gate-Source Voltage Q2 VDS (V) = 30V ID = 8.5A RDS(ON) < 18mΩ RDS(ON) < 28mΩ IF 2.2 IFM 20 PD TJ, TSTG 2 1.28 -55 to 150 A W °C AO4912, AO4912L Parameter: Thermal Characteristics MOSFET Q1 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Parameter: Thermal Characteristics MOSFET Q2 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Thermal Characteristics Schottky Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State RθJA RθJL RθJA RθJL RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units Typ 48 74 35 Max 62.5 110 40 Units 47.5 71 32 62.5 110 40 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. °C/W °C/W °C/W AO4914, AO4914L Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current. (Set by Schottky leakage) Conditions Min Typ Max VR=30V VR=30V, TJ=125°C 0.007 0.05 3.2 10 mA VR=30V, TJ=150°C 12 20 100 nA 1.8 3 V 15.5 18 22.3 27 VGS=4.5V, ID=6A 23 28 mΩ VDS=5V, ID=8.5A 23 0.5 V 3.5 A 1165 pF ID=250µA, VGS=0V 30 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=8.5A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode + Schottky Forward Voltage Maximum Body-Diode + Schottky Continuous Current IS TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance (FET + Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance V A 0.45 971 VGS=0V, VDS=15V, f=1MHz 190 0.7 mΩ S pF 110 VGS=0V, VDS=0V, f=1MHz Units pF 0.85 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19.2 23 nC Qg(4.5V) Total Gate Charge 9.36 11.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=8.5A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 2.6 nC 4.2 nC 5.2 7.5 4.4 6.5 ns ns 17.3 26 ns tf Turn-Off Fall Time 3.3 5 ns trr Body Diode + Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 18.8 23 Qrr Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 9.2 11 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4914, AO4914L Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 4V 10V 25 16 VDS=5V 4.5V 3.5V 12 ID(A) ID (A) 20 15 125°C 8 10 25°C VGS=3V 4 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 1.6 VGS=10V 26 Normalized On-Resistance VGS=4.5V 24 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 28 22 20 VGS=10V 18 16 14 0 5 10 15 ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 50 1.0E+01 1.0E+00 40 ID=8.5A 125° 1.0E-01 30 IS (A) RDS(ON) (mΩ) 2.5 125°C 25°C 1.0E-02 1.0E-03 20 FET+SCHOTTKY 1.0E-04 25°C 1.0E-05 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) 1.0 AO4914, AO4914L Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=15V ID=8.5A 1250 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1000 750 500 Coss FET+SCHOTTKY 250 Crss 0 0 0 4 8 12 16 0 20 5 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 50 100.0 RDS(ON) limited 100µs 1ms 10.0 10µs 10ms 0.1s 1s 1.0 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) 10 30 20 10 10s DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 40 ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 T 100 1000 AO4914, AO4914L Q2 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 0.003 Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 100 nA 3 V 15.5 18 22.3 27 VGS=4.5V, I D=6A 23 28 VDS=5V, ID=8.5A 23 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge µA 1.8 VGS=10V, I D=8.5A Coss 1 5 Gate Threshold Voltage Crss Units V TJ=55°C VGS(th) IS Max 30 IGSS RDS(ON) Typ A VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, I D=8.5A mΩ S 0.75 1040 mΩ 1 V 3 A 1250 pF 180 pF 110 pF 0.85 Ω 19.2 23 nC 9.36 11.2 nC 0.7 2.6 nC Qgd Gate Drain Charge 4.2 tD(on) Turn-On DelayTime 5.2 7.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time nC ns VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 4.4 6.5 ns 17.3 26 ns 3.3 5 ns 16.7 21 6.7 10 ns nC trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4914, AO4914L Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 4V 10V 25 16 VDS=5V 4.5V 3.5V 12 ID(A) ID (A) 20 15 125°C 8 10 25°C VGS=3V 4 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 28 1.6 VGS=10V 26 Normalized On-Resistance VGS=4.5V 24 RDS(ON) (mΩ) 2.5 22 20 VGS=10V 18 16 14 0 5 10 15 ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 50 1.0E+01 1.0E+00 ID=8.5A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4914, AO4914L Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 750 500 Coss 2 250 Crss 0 0 0 4 8 12 16 0 20 5 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 50 100.0 RDS(ON) limited 100µs 1ms 10.0 10µs 10ms 0.1s 1s 1.0 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) 10 30 20 10 10s DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 40 ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 T 100 1000