New Product AR1PD thru AR1PM Vishay General Semiconductor Surface Mount Fast Avalanche Rectifiers FEATURES eSMP ® Series • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency • Low reverse current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-220AA (SMP) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V to 1000 V IFSM 30 A, 25 A trr 140 ns, 120 ns IR 1 μA EAS 20 mJ TJ max. 175 °C • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code AR1PD AR1PG AR1PJ AR1PK AR1PM ARD ARG ARJ ARK ARM 200 400 600 800 1000 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C EAS 20 mJ TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Document Number: 89289 Revision: 19-Apr-11 1.0 30 V A 25 A For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AR1PD thru AR1PM Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C AR1PD AR1PG AR1PJ AR1PK AR1PM 1.25 1.6 1.15 1.4 UNIT Maximum instantaneous forward voltage IF = 1.0 A Maximum reverse current Rated VR Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 140 120 ns Typical junction capacitance 4.0 V, 1 MHz CJ 12.5 8.5 pF VF (1) TA = 125 °C TA = 25 °C 1.0 IR (2) TA = 125 °C V μA 100 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance AR1PD AR1PG AR1PJ RJA (1) 132 RJM (1) 15 AR1PK AR1PM UNIT °C/W Note Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mount at the terminal cathode band (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE AR1PJ-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel AR1PJ-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel AR1PJHM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel (1) 0.024 85A 10 000 13" diameter plastic tape and reel AR1PJHM3/85A Note Automotive grade (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.2 Resistive or Inductive Load AR1PD thru AR1PJ AR1PD thru AR1PJ 1.0 0.8 AR1PK thru AR1PM 0.6 0.4 0.2 D = 0.5 D = 0.2 0.8 D = 1.0 D = 0.1 0.6 T 0.4 0.2 TM Measured at Mount of Terminal 0 100 D = 0.8 D = 0.3 1.0 Average Power Loss (W) Average Forward Rectified Current (A) 1.2 D = tp/T tp 0.8 1.0 0 110 120 130 140 150 160 170 180 0 0.2 0.4 0.6 1.2 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89289 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AR1PD thru AR1PM Vishay General Semiconductor 1.4 1000 D = 0.3 1.2 Average Power Loss (W) D = 0.8 D = 0.5 Instantaneous Reverse Current (μA) AR1PK thru AR1PM D = 0.2 1.0 D = 1.0 D = 0.1 0.8 0.6 T 0.4 0.2 D = tp/T tp 100 TA = 125 °C 10 TA = 75 °C 1 TA = 25 °C 0.1 AR1PD thru AR1PJ 0.01 0 0.2 0 0.4 0.8 0.6 1.0 1.2 10 30 40 50 60 70 80 90 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Typical Reverse Characteristics 1 TA = 75 °C 0.1 TA = 25 °C AR1PD thru AR1PJ Instantaneous Reverse Current (μA) TA = 125 °C TA = 175 °C 100 TA = 125 °C 10 TA = 75 °C 1 0.1 TA = 25 °C AR1PK thru AR1PM 0.01 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 10 Instantaneous Forward Voltage (V) 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Reverse Characteristics 10 100 Junction Capacitance (pF) TA = 175 °C 1 TA = 125 °C TA = 75 °C 0.1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 AR1PD thru AR1PJ AR1PK thru AR1PM AR1PK thru AR1PM 0.01 0.3 100 1000 TA = 175 °C 0.01 0.3 Instantaneous Forward Current (A) 20 Average Forward Current (A) 10 Instantaneous Forward Current (A) TA = 175 °C 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 Instantaneous Forward Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics Document Number: 89289 Revision: 19-Apr-11 1 0.1 1 10 100 Reverse Voltage (V) Fig. 8 - Typical Junction Capacitance For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AR1PD thru AR1PM Vishay General Semiconductor Transient Thermal Impedance (°C/W) 1000 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 9 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.032 (0.80) 0.016 (0.40) 0.103 (2.60) 0.087 (2.20) 0.158 (4.00) 0.146 (3.70) 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) www.vishay.com 4 0.025 0.030 (0.635) (0.762) 0.100 (2.54) 0.050 (1.27) For technical questions within your region, please contact one of the following: Document Number: 89289 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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