IRF3708S
SMPS MOSFET
Applications
l
High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
D2Pak
IRF3708S
Benefits
l
Ultra-Low Gate Impedance
l
Very Low RDS(on) at 4.5V VGS
l
Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
30V
12mΩ
62A
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
±12
62
52
248
87
61
0.58
-55 to + 175
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)*
–––
0.50
–––
–––
1.73
–––
62
40
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
2014-8-13
1
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IRF3708S
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.028
8
9.5
14.5
–––
–––
–––
–––
–––
Max. Units
––– V
––– V/°C
12.0
13.5 mΩ
29
2.0
V
20
µA
100
200
nA
-200
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
VGS = 4.5V, I D = 12A
VGS = 2.8V, ID = 7.5A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
49
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
24
6.7
5.8
14
7.2
50
17.6
3.7
2417
707
52
Max. Units
Conditions
–––
S
VDS = 15V, ID = 50A
–––
ID = 24.8A
VDS = 15V
–––
nC
–––
VGS = 4.5V
21
VGS = 0V, ID = 24.8A, VDS = 15V
–––
VDD = 15V
–––
ID = 24.8A
ns
–––
RG = 0.6Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Symbol
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
213
62
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2014-8-13
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
62
–––
–––
248
–––
–––
–––
–––
–––
–––
0.88
0.80
41
64
43
70
1.3
–––
62
96
65
105
A
2
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 125°C, I S = 31A, VGS = 0V
TJ = 25°C, IF = 31A, VR=20V
di/dt = 100A/µs
TJ = 125°C, IF = 31A, VR=20V
di/dt = 100A/µs
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IRF3708S
1000
VGS
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
2.7V
10
VGS
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
2.7V
10
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.5
TJ = 175 ° C
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
100
ID = 62A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2014-8-13
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
10
2.0
10
Fig 2. Typical Output Characteristics
1000
100
1
VDS, Drain-to-Source Voltage (V)
3
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF3708S
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2800
Ciss
2100
1400
C
oss
700
10
VGS , Gate-to-Source Voltage (V)
3500
C
rss
0
1
10
ID = 24.8A
VDS = 15V
8
6
4
2
0
100
0
VDS , Drain-to-Source Voltage (V)
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
TJ = 175 ° C
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
DS(on)
1
0us
100
TJ = 25 ° C
10
1
00us
1
ms
10
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
2.6
VSD ,Source-to-Drain Voltage (V)
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-13
1
0ms
TC = 25 ° C
TJ = 175 ° C
Single Pulse
Fig 8. Maximum Safe Operating Area
4
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IRF3708S
70
RD
VDS
VGS
60
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
50
10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-13
5
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IRF3708S
(
RDS(on), Drain-to -Source On Resistance Ω)
RDS ( on ) , Drain-to-Source On Resistance (Ω )
0.025
0.020
0.015
VGS = 4.5V
0.010
VGS = 10V
0.005
50
0
100
150
200
250
0.017
0.015
0.013
0.011
ID = 31A
0.009
0.007
2.0
300
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3µF
D.U.T.
+
V
- DS
QGD
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Gate Charge Test Circuit
and Waveform
15V
V (B R )D S S
tp
L
VD S
D.U .T
RG
IA S
20 V
IAS
tp
DRIVER
+
- VD D
0.0 1 Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
2014-8-13
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2µF
12V
A
ID
10A
20.7A
BOTTOM 24.8A
TOP
480
360
240
120
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
6
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IRF3708S
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )
-B -
3 .7 8 (.1 4 9 )
3 .5 4 (.1 3 9 )
4 .6 9 (.1 8 5 )
4 .2 0 (.1 6 5 )
-A -
1 .3 2 (.05 2 )
1 .2 2 (.04 8 )
6 .4 7 (.2 5 5 )
6 .1 0 (.2 4 0 )
4
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 )
M IN
1
2
3
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )
4 .0 6 (.1 6 0 )
3 .5 5 (.1 4 0 )
3X
1 .4 0 (.0 5 5 )
3X
1 .1 5 (.0 4 5 )
L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - S OU R CE
4 - D R A IN
0 .93 (.0 3 7 )
0 .69 (.0 2 7 )
0 .3 6 (.0 1 4 )
3X
M
B
A M
0.5 5 (.0 2 2 )
0.4 6 (.0 1 8 )
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
2 .5 4 (.1 0 0 )
2X
N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
ASSEMBLY
LOT CODE
2014-8-13
7
PART NU M BER
IR F 1 0 1 0
9246
9B
1M
D ATE CO DE
(Y Y W W )
YY = YEAR
W W = W EEK
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IRF3708S
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
3
1 5.49 (.6 10)
1 4.73 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37 )
3X
0.6 9 (.0 27 )
0.25 (.0 10 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A
PART NUM BER
F530S
9 24 6
9B
1M
A S S E M B LY
LO T C O D E
2014-8-13
8
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRF3708S
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
2014-8-13
9
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IRF3708S
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1 .6 0 (.0 63 )
1 .5 0 (.0 59 )
4 .1 0 ( .1 6 1)
3 .9 0 ( .1 5 3)
F E ED D IRE C TIO N 1 .8 5 (.0 7 3 )
1.60 (.06 3)
1.50 (.05 9)
1 1.60 (.457 )
1 1.40 (.449 )
1 .6 5 (.0 6 5 )
0 .3 68 (.0 145 )
0 .3 42 (.0 135 )
15 .4 2 (.60 9)
15 .2 2 (.60 1)
24.30 (.95 7)
23.90 (.94 1)
TR L
1.75 (.0 69 )
1.25 (.0 49 )
10 .9 0 (.42 9)
10 .7 0 (.42 1)
4 .7 2 (.13 6)
4 .5 2 (.17 8)
16 .1 0 (.63 4)
15 .9 0 (.62 6)
F E ED D IR E CT IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
33 0.00
(14.173)
M AX .
60.00 (2.362)
M IN.
NO TE S :
1. CO MF OR M S TO EIA-418.
2. CO N TRO LLIN G DIM ENSIO N : MILLIM ET ER .
3. DIM ENS ION MEAS URED @ HU B.
4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E.
30.40 (1.197)
MA X.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.7 mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is only applied to TO-220AB package
RG = 25Ω, IAS = 24.8 A.
2014-8-13
10
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