NJ10N80 POWER MOSFET 10A 800V N-CHANNEL POWER MOSFET DESCRIPTION The NJ10N80 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES * VDS = 800V * ID = 10A * RDS(ON) =1.1Ω@VGS = 10V. * Ultra Low Gate Charge ( Typical 45nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 15pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-220 TO-220F SYMBOL ORDERING INFORMATION Ordering Number Package NJ10N80-LI NJ10N80-BL NJ10N80F-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Box Bulk Tube NJ10N80 POWER MOSFET TO-220F1 63 ABSOLUTE MAXIMUM RATINGS (TC =25°ɋ, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25°ɋ) Pulsed Drain Current (Note 2) Avalanche Current (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220 Power Dissipation SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt 63 TO-220F TO-220 Linear Derating Factor above TC = 25°ɋ RATINGS 800 ±30 10 40 10 920 24 4.0 156 PD W 1.25 0.504 TO-220F UNIT V V A A A mJ mJ V/ns W/°ɋ Junction Temperature TJ 150 °ɋ Storage Temperature TSTG -55 ~ +150 °ɋ Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=17.3mH, IAS=10A, VDD=50V, RG=25ȍ, Starting TJ=25°C 4. ISD 10 A, di/dt 200A/ȝs, VDD BVDSS, Starting TJ=25°C. THERMAL DATA PARAMETER Junction to Ambient TO-220F TO-220 SYMBOL RATINGS UNIT șJA 62.5 °ɋ/W TO-220 0.8 șJC Junction to Case TO-220F °ɋ/W 1.98 NJ10N80 POWER MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°ɋ, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS VGS =0 V, ID =250 μA VDS =800V, VGS =0 V Drain-Source Leakage Current IDSS VDS =640V, TC =125°C Gate-Body Leakage Current IGSS VDS =0 V, VGS = ±30 V Breakdown Voltage Temperature Coefficient ǻBVDSS/ǻTJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250μA Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 5.0A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=400V, ID=10.0A, RG=25ġ(Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =640V, VGS =10V, Gate Source Charge QGS ID =10.0A (Note 1,2) Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=10.0 A,VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, dIF /dt = 100 A/μs, IS = 10.0A (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width 300μs, Duty Cycle 2%. 2. Independent of operating temperature. MIN TYP MAX UNIT 800 V 10 100 ±100 0.98 3.0 0.9 5.0 1.1 2150 2800 180 230 15 20 50 130 90 80 45 13.5 17 110 270 190 170 58 μA nA V/°ɋ V ȍ pF pF pF ns nC 1.4 V 10.0 A 40.0 730 10.9 ns nC NJ10N80 POWER MOSFET TEST CIRCUIT Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms NJ10N80 POWER MOSFET TEST CIRCUIT(Cont.) + D.U.T. VDS + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop NJ10N80 POWER MOSFET TYPICAL CHARACTERISTICS Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 5 10 VGS=10V, ID=5A 4 Drain Current, ID (A) Drain Current,ID (A) 8 6 4 3 2 1 2 0 0 0 200 400 600 800 0 1000 1 2 3 4 Source to Drain Voltage,VSD (mV) Drain to Source Voltage, VDS (V) Drain Current vs. Gate Threshold Voltage Drain Current vs. Drain-Source Breakdown Voltage 5 3 400 Drain Current,ID (μA) Drain Current,ID (mA) 2.5 2 1.5 1 350 300 250 200 150 100 0.5 50 0 0 1 2 3 Gate Threshold Voltage,VTH (V) 4 0 0 200 400 600 800 1000 Drain-Source Breakdown Voltage,BVDSS(V)