Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0886 Features Description • Usable Gain to 5.5␣ GHz The MSA-0886 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. • High Gain: 32.5 dB Typical at 0.1␣ GHz 22.5 dB Typical at 1.0␣ GHz • Low Noise Figure: 3.3␣ dB Typical at 1.0␣ GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.” The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9547E OUT MSA Vd = 7.8 V 6-426 86 Plastic Package ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. MSA-0886 Absolute Maximum Ratings Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65°C to 150°C Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance[2,4]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.1 mW/°C for TC > 80°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP VSWR Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω Power Gain (|S21| 2) f = 0.1 GHz f = 1.0 GHz Units Min. Typ. 20.5 32.5 22.5 dB Input VSWR f = 0.1 to 3.0 GHz 2.1:1 Output VSWR f = 0.1 to 3.0 GHz 1.9:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 3.3 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 27.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 6.2 7.8 Max. 9.4 –17.0 Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0886-TR1 MSA-0886-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-427 MSA-0886 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA) S21 S11 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .63 .56 .43 .35 .30 .27 .27 .31 .35 .40 .45 .51 .61 .68 –22 –41 –69 –88 –104 –116 –144 –166 178 162 149 137 116 100 32.5 31.3 28.6 26.4 24.2 22.4 19.2 16.7 14.8 12.9 11.4 9.9 7.3 4.6 42.12 36.68 26.94 20.89 16.21 13.20 9.15 6.84 5.50 4.41 3.72 3.14 2.31 1.69 160 143 119 104 93 83 65 49 38 25 13 1 –22 –42 –36.7 –33.9 –29.1 –27.0 –25.3 –24.2 –21.6 –19.5 –17.9 –17.4 –16.8 –16.1 –15.7 –15.2 .015 .020 .035 .045 .054 .062 .083 .105 .128 .135 .145 .157 .164 .173 54 50 52 49 50 49 46 41 36 30 25 19 10 4 .62 .55 .43 .34 .29 .26 .23 .22 .21 .20 .19 .18 .17 .23 –24 –46 –79 –103 –124 –139 –172 163 149 132 124 121 130 143 0.68 0.64 0.69 0.77 0.83 0.87 0.93 0.96 0.96 1.01 1.02 1.01 1.00 0.95 Note: 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 30 30 TC = +85°C TC = +25°C TC = –25°C 22 GP 21 13 15 P1 dB 20 NF (dB) 10 5 Gain Flat to DC 0 0 0.1 0.3 0.5 1.0 3.0 6.0 Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. 2 4 10 I d = 20 mA I d = 36 mA I d = 40 mA 3.5 8 3.0 6 I d = 20 mA 4 0.1 2.5 0.2 0.3 0.5 1.0 2.0 4.0 –25 0 +25 +55 +85 Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=36mA. 4.0 NF (dB) 8 Figure 2. Device Current vs. Voltage. 14 10 6 TEMPERATURE (°C) I d = 40 mA I d = 36 mA NF Vd (V) 4.5 16 4 3 2 0 FREQUENCY (GHz) 12 12 11 I d = 20 mA 10 P1 dB (dBm) 23 I d = 36 mA 20 Id (mA) G p (dB) 25 Gp (dB) 40 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-428 P1 dB (dBm) 35 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) GROUND RF INPUT 1 A08 RF OUTPUT AND DC BIAS 45° GROUND 1.52 ± 0.25 (0.060 ± 0.010) 4 C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 2.67 ± 0.38 (0.105 ± 0.15) 5° TYP. 0.66 ± 0.013 (0.026 ± 0.005) 0.203 ± 0.051 (0.006 ± 0.002) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-429