AG604-89 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x DC – 2700 MHz x +19.5 dBm P1dB at 900 MHz x +33.5 dBm OIP3 at 900 MHz x 21 dB Gain at 900 MHz x Single Voltage Supply x Lead-free / RoHS-compliant / Green SOT-89 package x Internally matched to 50 : Product Description Functional Diagram The AG604-89 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG604-89 typically provides 21 dB of gain, +33.5 dBm OIP3, and +19.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 qC and is housed in a lead-free/green/RoHS-compliant SOT-89 industry-standard SMT package. GND Applications The AG604-89 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. x Mobile Infrastructure x CATV / FTTX x W-LAN / ISM x RFID x WiMAX / WiBro The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG604-89 will work for other various applications within the DC to 2.7 GHz frequency range such as CATV and WiMAX. Specifications (1) Parameter 4 1 2 3 RF IN GND RF OUT Function Input Output/Bias Ground Pin No. 1 3 2, 4 Typical Performance (1) Units Min MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA DC Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Output IP2 Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Device Voltage Device Current 17.2 Typ 900 21.4 20 12 +19.4 +33.4 +45 3.5 1900 18.2 +19 +33.2 5.16 75 Max Parameter Units 2700 Frequency S21 S11 S22 Output P1dB Output IP3 (2) Noise Figure MHz dB dB dB dBm dBm dB Typical 500 22.5 -18 -16 +19.4 +33.5 3.5 900 21.4 -20 -12 +19.4 +33.4 3.5 1900 18.2 -35 -10 +19.0 +33.2 3.8 2140 17.6 -25 -10 +19.0 +32.9 3.8 19.2 1. Test conditions: 25 ºC, Supply Voltage = +6 V, Rbias = 11.2 , 50 System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Rating Ordering Information -40 to +85 qC -55 to +150 qC +7 V +10 dBm +250 qC Part No. Description AG604-89G InGaP HBT Gain Block AG604-89PCB 700 – 2400 MHz Fully Assembled Eval. Board (lead-free/green/RoHS-compliant SOT-89 Package) Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 1 of 5 June 2006 AG604-89 The Communications Edge TM Product Information InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V, Rbias = 11.2 :, Icc = 75 mA Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 23.2 -20 -29 +19.4 +33.6 3.4 500 22.5 -18 -16 +19.4 +33.5 3.5 900 21.4 -20 -12 +19.4 +33.4 3.5 1900 18.2 -35 -10 +19.0 +33.2 3.8 2140 17.6 -25 -10 +19.0 +32.9 3.8 2400 16.9 -25 -10 +18.8 +32.4 3.9 3500 14.4 -19 -8 +16.2 5800 10.1 -15 -6 1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 5.16 V, Rbias = 11.2 , Icc = 75 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. 20 18 16 12 0 1 3 0 4 1 2 3 4 5 OIP2 (dBm) 30 25 40 35 -40 C 2 2.5 3 0 200 +25 C 20 Gain (dB) -40 C +25 C 0 0.5 1 1.5 2 2.5 2 -40 C 400 600 800 0 1000 3 Frequency (GHz) 3.5 4 +25 C +85 C 0.5 18 20 16 16 16 12 8 Output Power 12 4 -8 -4 0 Input Power (dBm) 1.5 2 2.5 3 Output Power / Gain vs. Input Power 24 18 -12 1 Frequency (GHz) Gain 14 +85 C 0 5.8 1 +85 C frequency = 900 MHz 22 5 5.4 3 Output Power / Gain vs. Input Power P1dB vs. Frequency 10 5.0 Noise Figure vs. Frequency Frequency (MHz) 15 4.6 0 Frequency (GHz) 20 4.2 4 45 +85 C 1.5 3.8 5 4 8 Gain (dB) 1 20 Device Voltage (V) Output Power (dBm) 0.5 40 0 3.4 30 0 Optimal operating point 60 6 Output IP2 vs. Frequency 50 20 P1dB (dBm) S22 80 Frequency (GHz) 35 +25 C -30 100 -40 2 Frequency (GHz) -40 C -20 S11 +85 C Output IP3 vs. Frequency 40 OIP3 (dBm) +25 C -10 NF (dB) -40 C I-V Curve 120 frequency = 2000 MHz 24 20 Gain 14 16 12 12 10 8 Output Power 8 -12 -8 Output Power (dBm) S11, S22 (dB) Gain (dB) 22 14 Return Loss 0 Device Current (mA) Gain vs. Frequency 24 4 -4 0 Input Power (dBm) 4 8 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 2 of 5 June 2006 AG604-89 The Communications Edge TM Product Information InGaP HBT Gain Block Typical Device RF Performance (cont’d) Supply Bias = +8 V, Rbias = 38 :, Icc = 75 mA Gain vs. Frequency OIP3 (dBm) Gain (dB) 22 20 18 16 14 -40 C 12 0 +25 C 1 25 3 40 35 -40 C +25 C +85 C 30 0 4 45 +85 C 20 0.5 1 1.5 2 2.5 3 0 200 Frequency (GHz) P1dB vs. Frequency 20 400 600 800 1000 Frequency (MHz) Noise Figure vs. Frequency 5 4 15 NF (dB) P1dB (dBm) 30 +25 C Output IP2 vs. Frequency 50 35 -40 C +85 C 2 Frequency (GHz) Output IP3 vs. Frequency 40 OIP2 (dBm) 24 10 5 -40 C +25 C 3 2 1 +85 C -40 C 0 +25 C +85 C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 3 of 5 June 2006 AG604-89 The Communications Edge TM Product Information InGaP HBT Gain Block Application Circuit Vcc Icc = 75 mA R1 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke RF IN RF OUT AG604-89 C2 Blocking Capacitor C1 Blocking Capacitor Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 µF 1000 pF Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF 2500 18 nH 56 pF 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. L1 C1, C2 C3 C4 R1 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 PF chip capacitor Do Not Place 10.0 : 1% tolerance Size 0603 0603 0603 Recommended Bias Resistor Values S upply R1 value S ize Voltage 6V 11.2 ohms 0805 7V 24.5 ohms 1210 8V 38 ohms 1210 9V 51 ohms 2010 10 V 65 ohms 2010 12 V 91 ohms 2512 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. 0805 Typical Device Data S-Parameters (Vdevice = +5.16 V, ICC = 75 mA, T = 25 C, calibrated to device leads) Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -21.02 -20.93 -21.67 -21.48 -21.14 -21.11 -21.02 -20.63 -20.16 -18.96 -18.42 -17.62 -16.99 -16.24 -15.25 -14.75 -14.09 -13.32 -12.78 -12.01 -11.42 -10.91 -10.07 -9.48 -9.24 176.97 167.34 156.28 144.30 138.44 130.15 123.48 121.82 115.19 110.58 109.32 106.38 102.88 100.26 92.23 89.12 84.37 81.46 76.94 71.30 66.87 60.24 55.04 51.03 46.08 22.84 22.70 22.19 21.63 20.90 20.08 19.35 18.55 17.86 17.11 16.47 15.75 15.12 14.54 13.92 13.42 12.93 12.35 11.87 11.34 10.79 10.24 9.71 9.26 8.80 176.30 163.03 146.43 131.68 117.72 105.21 93.63 82.34 72.75 63.40 54.31 45.65 36.89 28.84 20.86 12.78 4.39 -2.84 -11.16 -18.78 -26.03 -33.13 -40.94 -46.90 -55.27 -25.02 -25.01 -24.96 -24.81 -24.60 -24.37 -24.14 -23.92 -23.50 -23.14 -22.93 -22.58 -22.23 -21.85 -21.64 -21.40 -21.06 -20.80 -20.62 -20.41 -20.12 -20.03 -19.99 -19.72 -19.45 0.11 0.10 -0.54 -1.02 -1.19 -2.45 -3.48 -4.63 -6.73 -8.83 -11.10 -14.33 -17.30 -20.87 -25.34 -28.81 -32.91 -37.16 -41.54 -46.34 -50.54 -56.69 -61.21 -65.66 -71.22 -35.04 -22.53 -16.95 -13.83 -11.97 -10.82 -9.83 -9.23 -8.61 -8.06 -7.62 -7.15 -6.90 -6.63 -6.29 -5.99 -5.69 -5.52 -5.17 -4.97 -4.67 -4.58 -4.24 -4.01 -3.93 -72.79 -107.76 -122.03 -138.27 -151.92 -165.62 -176.24 172.06 162.19 152.28 143.58 134.36 126.68 118.09 110.51 103.27 96.26 89.72 82.40 75.56 69.05 62.28 55.62 51.15 44.84 Device S-parameters are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 4 of 5 June 2006 AG604-89 The Communications Edge TM Product Information InGaP HBT Gain Block AG604-89G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Product Marking Outline Drawing The AG604-89G will be marked with an “A604G” designator with an alphanumeric lot code marked below the part designator. The obsolete tin-lead package is marked with an “AG604” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1C Passes 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Parameter Rating -40 to +85 qC 154 qC / W 145 qC Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5.16V, 75 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C. MTTF vs. GND Tab Temperature 1000 MTTF (million hrs) Thermal Specifications 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. 100 10 1 60 70 80 90 100 110 Tab Temperature (°C) 120 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 5 of 5 June 2006