isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor FRM140 DESCRIPTION ·23A, 100V, RDS(on) = 0.13Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 23 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor FRM140 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 100 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.0 RDS(ON) Drain-Source On-stage Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 15A 0.13 Ω Gate Source Leakage Current VGS= ±20V;VDS= 0 100 nA IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0 1 mA VSD Diode Forward Voltage IF= 23A; VGS= 0 1.8 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn