N-Channel Power Trench® MOSFET 30 V, 19.5 A, 5.3 mΩ Features General Description Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Application DC - DC Buck Converters Notebook battery power management Load switch in Notebook Bottom Top 8 1 7 6 D D D D 5 D 5 4 G D 6 3 S D 7 2 S D 8 1 S G S S S Pin 1 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current Drain Current ID (Note 3) -Continuous (Package limited) TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 19.5 63 (Note 1a) 17.5 (Note 4) 54 -Pulsed A 70 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 31 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 4.0 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7678 Device FDMC7678 ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 Package MLP 3.3x3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET November 2013 FDMC7678 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 21 mV/°C 1 μA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 17.5 A 4.2 5.3 Static Drain to Source On Resistance VGS = 4.5 V, ID = 15.0 A 5.1 6.8 VGS = 10 V, ID = 17.5 A TJ = 125 °C 5.7 7.2 VDD = 5 V, ID = 17.5 A 90 rDS(on) gFS Forward Transconductance 1.2 1.5 -5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V f = 1MHz 1810 2410 620 820 pF pF 75 110 pF 0.7 2.5 Ω 10 19 ns 4 10 ns 26 41 ns 3 10 ns nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 17.5 A VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V 28 39 Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 17.5 A 14 19 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge nC 4.4 nC 3.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 17.5 A (Note 2) 0.8 1.2 IF = 17.5 A, di/dt = 100 A/μs V 30 49 ns 13 23 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b.125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. As an N-ch device, the negative VGS rating is for low duty cycle pulse occurence only. No continuous rating is implied. 4. EAS of 54 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 2 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 70 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) 4 VGS = 10 V VGS = 6 V VGS = 4.5 V 50 VGS = 3.5 V 40 VGS = 3 V 30 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 VGS = 3 V 2 1 0 10 20 30 40 50 60 70 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 12 ID = 17.5 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 0 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 8 TJ = 125 oC 6 4 2 100 125 150 ID = 17.5 A TJ = 25 oC 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) 70 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 ID, DRAIN CURRENT (A) VGS = 6 V VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.0 VGS = 3.5 V VGS = 4.5 V 50 VDS = 5 V 40 TJ = 150 oC 30 TJ = 25 oC 20 10 VGS = 0 V TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 TJ = -55 oC 0 1.0 1.5 2.0 2.5 3.0 0.01 0.0 3.5 0.4 0.6 0.8 1.0 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 0.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) 3 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = 17.5 A VDD = 10 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 20 V 4 1000 Coss 100 2 0 f = 1 MHz VGS = 0 V 0 5 10 15 20 25 Crss 30 0.1 30 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 70 30 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJC = 4.0 C/W 60 TJ = 25 oC TJ = 100 oC TJ = 125 oC 50 VGS = 10 V 40 VGS = 4.5 V 30 20 10 Limited by Package 1 0.001 0.01 0.1 1 10 0 25 100 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 μs 10 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s DC 100 ms TA = 25 oC 0.01 0.01 0.1 1 10 100200 VDS, DRAIN to SOURCE VOLTAGE (V) 150 2000 1000 100 10 SINGLE PULSE RθJA = 125 oC/W o TA = 25 C 1 0.5 -4 -3 -2 10 10 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 5 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted A 0.10 C 2X 8 B (3.40) 2.37 5 0.45(4X) 2.15 (1.70) (0.40) KEEP OUT AREA (0.65) PIN1 IDENT A 0.65 0.10 C TOP VIEW 0.70(4X) 1 4 0.42(8X) 1.95 2X 0.8MAX 0.10 C (0.20) 0.08 C 0.05 0.00 SIDE VIEW RECOMMENDED LAND PATTERN C SEATING PLANE 2.27+0.05 1 4 0.45+0.05 (4X) (0.40) (1.20) 2.05+0.05 0.45+0.05 (3X) A 8 0.65 5 1.95 0.32+0.05 (8X) 0.10 0.05 NOTES: A.EXCEPT AS NOTED, PACKAGE CONFORMS TO JEDEC REGISTRATION MO-240 VARIATION BA.. B.DIMENSIONS ARE IN MILLIMETERS. C.DIMENSIONS AND TOLERANCES PER ASME Y14.5M,1994. D.SEATING PLANE IS DEFINED BY TERMINAL TIPS ONLY E.BODY DIMENSIONS DO NOT INCLUDE MOLD FLASH PROTRUSIONS NOR GATEBURRS. F.FLANGE DIMENSIONS INCLUDE INTERTERMINAL FLASH OR PROTRUSION. INTERTERMINAL FLASH OR PROTRUSION SHALL NOT EXCEED 0.25MM PER SIDE. G.IT IS RECOMMENDED TO HAVE NO TRACES OR VIA WITHIN THE KEEP OUT AREA. H.DRAWING FILENAME: MKT-MLP08Trev3. I.GENERAL RADII FOR ALL CORNERS SHALL BE 0.20MM MAX. J.FAIRCHILD SEMICONDUCTOR. C A B C BOTTOM VIEW ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 6 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C2 7 www.fairchildsemi.com FDMC7678 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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