HMC326MS8G v04.1203 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC326MS8G is ideal for: Psat Output Power: +26 dBm • Microwave Radios > 40% PAE • Broadband Radio Systems Output IP3: +36 dBm • Wireless Local Loop Driver Amplifier High Gain: 21 dB Vs: +5.0V Ultra Small Package: MSOP8G Functional Diagram General Description The HMC326MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier which operates between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Min. Frequency Range Gain 18 Gain Variation Over Temperature Max. Units 3.0 - 4.5 GHz 21 dB 0.025 0.035 dB / °C Input Return Loss 12 dB Output Return Loss 7 dB 23.5 dBm 26 dBm 36 dBm 5 dB 0.001 / 130 mA 7 mA 10 ns Output Power for 1dB Compression (P1dB) 21 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 32 Noise Figure Supply Current (Icc) Vpd = 0V / 5V Control Current (Ipd) Switching Speed 8 - 98 Typ. tOn/tOff For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC326MS8G v04.1203 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Broadband Gain & Return Loss Gain vs. Temperature 8 25 24 20 S21 S11 S22 5 0 -5 20 18 +25C +85C -40C -10 -15 16 -20 2 2.5 3 3.5 4 4.5 5 5.5 3 6 3.25 3.5 P1dB vs. Temperature 4.25 4.5 30 +25C +85C -40C 28 28 Psat (dBm) OUTPUT P1dB (dBm) 4 Psat vs. Temperature 30 26 24 22 26 24 +25C +85C -40C 22 20 20 3 3.25 3.5 3.75 4 4.25 4.5 3 3.25 3.5 FREQUENCY (GHz) 3.75 4 4.25 4.5 FREQUENCY (GHz) Output IP3 vs. Temperature Power Compression @ 3.5 GHz 40 Pout (dBm), Gain (dB), PAE (%) 45 +25C +85C -40C 38 OIP3 (dBm) 3.75 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - SMT 22 10 GAIN (dB) RESPONSE (dB) 15 36 34 32 30 40 35 30 25 20 15 10 Output Power (dBm) Gain (dB) PAE (%) 5 0 3 3.25 3.5 3.75 4 FREQUENCY (GHz) 4.25 4.5 -8 -6 -4 -2 0 2 4 6 8 10 12 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 99 HMC326MS8G v04.1203 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) 0 INPUT RETURN LOSS (dB) AMPLIFIERS - SMT 8 +25C +85C -40C -5 -10 -15 -20 -3 -6 -9 +25C +85C -40C -12 -15 3 3.25 3.5 3.75 4 4.25 4.5 3 3.25 3.5 FREQUENCY (GHz) 3.75 4 4.25 4.5 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 +25C +85C -40C 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 +25C +85C -40C -10 -20 -30 -40 7 6 5 4 3 2 -50 1 -60 0 3 3.25 3.5 3.75 4 4.25 4.5 3 3.25 3.5 FREQUENCY (GHz) 3.75 4 FREQUENCY (GHz) 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 1.5 150 130 110 90 70 Icc (mA) GAIN (dB), P1dB (dBm), Psat (dBm) Gain, Power & Quiescent Supply Current vs. Vpd @3.5 GHz 50 P1dB Psat Gain 30 Icc 10 2 2.5 3 3.5 4 4.5 5 Vpd (Vdc) 8 - 100 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 4.25 4.5 MICROWAVE CORPORATION HMC326MS8G v04.1203 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Absolute Maximum Ratings +5.5 Vdc Control Voltage Range (Vpd) +5.5 Vdc RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 11.49 mW/°C above 85 °C) 0.747 W Thermal Resistance (junction to ground paddle) 87 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 8 AMPLIFIERS - SMT Collector Bias Voltage (Vcc) Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 101 MICROWAVE CORPORATION v04.1203 HMC326MS8G GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 2mm DC Header C1 - C2 330 pF Capacitor, 0603 Pkg. C3 0.7 pF Capacitor, 0603 Pkg. C4 3.0 pF Capacitor, 0402 Pkg. C5 2.2 µF Capacitor, Tantalum L1 3.3 nH Inductor, 0805 Pkg. U1 HMC326MS8G Amplifier PCB* 104106 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Rogers 4350 8 - 102 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC326MS8G v04.1203 GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Application Circuit AMPLIFIERS - SMT 8 Recommended Component Values L1 3.3 nH C1 - C2 330 pF C3 0.7 pF C4 3.0 pF C5 2.2 µF Note 1: C1 should be located < 0.1” (2.54 mm) from pin 8 (Vcc). Note 2: C2 should be located < 0.1” (2.54 mm) from L1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 103