HSMC HSB857 Pnp epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 1/3
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current.............................................................................................................. -4 A
IC Collector Current (IC Peak).............................................................................................. -8 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-70
-50
-5
35
60
-
Typ.
15
Max.
-1
-1
-1
320
-
Unit
V
V
V
uA
V
V
MHz
Test Conditions
IC=-10uA, IE=0
IC=-50mA, IB=0
IE=-10uA, IC=0
VCB=-50V, IC=0
IC=-2A, IB=-0.2A
IC=-1A, VCE=-4V
IC=-0.1A, VCE=-4V
IC=-1A, VCE=-4V
VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank
hFE
HSB857
B
60-120
C
100-200
D
160-320
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 2/3
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
Saturation Voltage (mV)
10000
hFE @ VCE=4V
hFE
100
10
1000
VBE(sat) @ IC=10IB
100
VBE(sat) @ IC=10IB
1
10
1
10
100
1000
10000
1
10
Collector Current (mA)
100
1000
10000
Collector Current (mA)
On Voltage & Collector Current
Switching Time & Collector Current
10000
10.00
Switching Times (us)
On Voltage (mV)
VCC=30V, IC=10IB1= -10IB2
1000
VBE(on) @ VCE=4V
100
Tstg
1.00
Tf
0.10
Ton
0.01
1
10
100
1000
10000
0.1
1.0
Collector Current (mA)
10.0
Collector Current (A)
Capacitance & Reverse-Biased Voltage
Safe Operating Area
100000
1000
PT=1ms
PT=100ms
Collector Current-IC (mA)
Capacitance (pF)
10000
100
Cob
100
10
1
10
0.1
1
10
Reverse-Biased Voltage (V)
HSB857
PT=1s
1000
100
1
10
100
Forward Voltage-VCE (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 3/3
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking :
A
B
D
E
C
HSMC Logo
Part Number
Date Code
Product Series
Rank
H
K
M
I
Style : Pin 1.Base 2.Collector 3.Emitter
3
G
N
2
1
4
P
O
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
*:Typical
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0295 0.0374
0.0449 0.0551
*0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
*3.83
0.75
0.95
1.14
1.40
*2.54
12.70
14.27
14.48
15.87
Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
HSB857
HSMC Product Specification
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